BC327_J35Z Equivalent & Substitute Parts

Part Overview

The BC327_J35Z is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 800 mA, collector-emitter breakdown voltage of 45 V, and a transition frequency of 100 MHz. The component is housed in a TO-92-3 through-hole package with a maximum power dissipation of 625 mW.

The BC327_J35Z is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this transistor.

Substiute Parts

BC327_J35Z
onsemiIn Stock: 1182BC327_J35Z Datasheet
BC327_J35Z
Current Part
BC32716TA
Fairchild SemiconductorIn Stock: 17412BC32716TA Datasheet
BC32716TA
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100 mA, 1 V
Power - Max 625 mW
Frequency - Transition 100 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-92-3 (TO-226AA)

Substitute Part Grouping Explanation

Substitute parts for the BC327_J35Z are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:

Electrical Parameters:

  • Transistor type must be PNP
  • Maximum collector current (Ic) must be 800 mA or greater
  • Collector-emitter breakdown voltage (VCEO) must be 45 V or greater
  • Vce saturation characteristics must match: 700 mV @ 50 mA, 500 mA
  • Collector cutoff current (ICBO) must be 100 nA or less
  • DC current gain (hFE) minimum must be 100 @ 100 mA, 1 V or greater
  • Maximum power dissipation must be 625 mW or greater
  • Transition frequency must be 100 MHz or greater
  • Operating temperature range must support 150°C (TJ) or higher

Mechanical Parameters:

  • Mounting type must be through-hole
  • Package must be TO-92-3 (TO-226AA) with formed leads

The BC32716TA manufactured by Fairchild Semiconductor meets all specified electrical and mechanical parameters and is classified as a parametric equivalent.

Parameter Comparison

Parameter BC327_J35Z (onsemi) BC32716TA (Fairchild Semiconductor) Match
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA 700 mV @ 50 mA, 500 mA
Current - Collector Cutoff (Max) 100 nA 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100 mA, 1 V 100 @ 100 mA, 1 V
Power - Max 625 mW 625 mW
Frequency - Transition 100 MHz 100 MHz
Operating Temperature (TJ) 150°C 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 (TO-226AA) TO-92-3 (TO-226AA)

Engineering Selection Recommendations

The BC32716TA is a direct parametric equivalent to the BC327_J35Z. Both devices are classified as obsolete and share identical electrical specifications and mechanical packaging.

Compliance Considerations:

The BC327_J35Z carries REACH Unaffected status and is classified under ECCN EAR99. The BC32716TA is ROHS3 Compliant and also classified under ECCN EAR99. When selecting between these parts for new applications or system replacements, verify that the target application environment and regulatory requirements align with the compliance status of the chosen substitute.

Inventory Availability:

The BC327_J35Z has 1,104 pieces in stock. The BC32716TA has 17,306 pieces in stock, providing greater availability for procurement.

Frequently Asked Questions (FAQ)

Q: Can the BC32716TA be used as a direct replacement for the BC327_J35Z?

A: Yes. The BC32716TA meets all electrical and mechanical parameters specified for the BC327_J35Z. Both devices are PNP transistors with identical maximum ratings, saturation characteristics, current gain, power dissipation, and transition frequency. Both are housed in TO-92-3 through-hole packages.

Q: Are there any differences in compliance or certification between these parts?

A: The BC327_J35Z is REACH Unaffected. The BC32716TA is ROHS3 Compliant. Both are classified under ECCN EAR99. Compliance requirements should be evaluated based on the specific application and regulatory environment.

Q: What is the significance of the TO-92-3 package specification?

A: The TO-92-3 package is a three-lead through-hole component package. Both the BC327_J35Z and BC32716TA use this identical package with formed leads (TO-226AA). This ensures mechanical and electrical compatibility in PCB layouts and circuit designs.

Q: Why is the BC327_J35Z classified as obsolete?

A: The BC327_J35Z is an older component no longer in active production by onsemi. Obsolete status indicates the manufacturer has discontinued this part. Equivalent substitutes such as the BC32716TA remain available from alternative manufacturers.

Q: What parameters must match for a transistor to be considered a substitute?

A: Substitution requires matching of transistor type (PNP), maximum collector current (800 mA), collector-emitter breakdown voltage (45 V), saturation voltage characteristics (700 mV @ 50 mA, 500 mA), collector cutoff current (100 nA), DC current gain (100 @ 100 mA, 1 V), maximum power dissipation (625 mW), transition frequency (100 MHz), operating temperature (150°C), and package type (TO-92-3 through-hole).

Q: Is the BC32716TA available in the same packaging as the BC327_J35Z?

A: Yes. Both devices use the TO-92-3 (TO-226AA) through-hole package with formed leads. This ensures direct compatibility in existing circuit board designs and assembly processes.

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