BC327-016G Equivalent & Substitute Parts

Part Overview

The BC327-016G is a PNP bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 800 mA maximum collector current. This device is packaged in the TO-92 (TO-226-3) through-hole configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary for new designs and ongoing production requirements. The substitute parts listed maintain electrical and mechanical compatibility within specified parameter ranges.

Key Parameters

Parameter	BC327-016G	Unit
Transistor Type	PNP	—
Collector Current (Max)	800	mA
Collector-Emitter Breakdown Voltage (Max)	45	V
Power Dissipation (Max)	625	mW
Transition Frequency	260	MHz
Operating Temperature Range	−55 to 150	°C
Package Type	TO-92-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the BC327-016G is determined by the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be PNP
Collector-emitter breakdown voltage must be greater than or equal to 45 V
Maximum collector current must be greater than or equal to 800 mA
Power dissipation must be greater than or equal to 625 mW
Operating temperature range must encompass −55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be TO-92-3 (TO-226-3)
Mounting type must be through-hole

The substitute parts are grouped into two categories based on these criteria:

Category A (Full Electrical Equivalents): Parts that meet or exceed all electrical parameters of the BC327-016G while maintaining identical package specifications.

Category B (Reduced Current Rating): Parts that meet voltage and power requirements but have reduced maximum collector current ratings, suitable for applications not requiring the full 800 mA capability.

Parameter Comparison

Parameter	BC327-016G	BC32740BU	BC32725BU	2N4403BU	2N3906BU	Unit
Manufacturer	onsemi	onsemi	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	—
Product Status	Obsolete	Active	Active	Active	Active	—
Transistor Type	PNP	PNP	PNP	PNP	PNP	—
Collector Current (Max)	800	800	800	600	200	mA
Collector-Emitter Breakdown Voltage (Max)	45	45	45	40	40	V
Power Dissipation (Max)	625	625	625	625	625	mW
Transition Frequency	260	100	100	200	250	MHz
Operating Temperature Range	−55 to 150	−55 to 150	−55 to 150	−55 to 150	−55 to 150	°C
Package Type	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	—

Engineering Selection Recommendations

Primary Substitutes (Full Electrical Equivalents):

BC32740BU and BC32725BU are both onsemi products with active product status. Both devices maintain the 45 V collector-emitter breakdown voltage and 800 mA maximum collector current of the BC327-016G. These parts are ROHS3 compliant and carry identical REACH unaffected status. The transition frequency is reduced to 100 MHz compared to the original 260 MHz specification. Selection between BC32740BU and BC32725BU depends on DC current gain requirements: BC32740BU provides 250 hFE minimum at 100 mA, while BC32725BU provides 160 hFE minimum at the same condition.

Secondary Substitutes (Reduced Current Rating):

2N4403BU (Fairchild Semiconductor) provides 600 mA maximum collector current with 40 V breakdown voltage. This part is suitable for applications where the full 800 mA capability is not required. 2N3906BU (Fairchild Semiconductor) provides 200 mA maximum collector current with 40 V breakdown voltage and is appropriate only for low-current applications.

All substitute parts maintain through-hole TO-92-3 package compatibility and the −55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can BC32740BU directly replace BC327-016G in all applications?

A: BC32740BU maintains electrical compatibility in voltage rating (45 V), current rating (800 mA), power dissipation (625 mW), and operating temperature range (−55°C to 150°C). The transition frequency is reduced from 260 MHz to 100 MHz. Applications operating at frequencies below 100 MHz experience no functional impact. Applications requiring operation above 100 MHz require circuit evaluation.

Q: What is the difference between BC32740BU and BC32725BU?

A: Both parts are onsemi PNP transistors with identical electrical ratings (45 V, 800 mA, 625 mW, 100 MHz). The primary difference is DC current gain: BC32740BU specifies 250 hFE minimum at 100 mA and 1 V, while BC32725BU specifies 160 hFE minimum at the same condition. Selection depends on bias circuit design requirements.

Q: Why is the collector current of 2N3906BU limited to 200 mA?

A: The 2N3906BU is a different device class within the PNP transistor family, designed for low-current applications. It is not suitable as a direct replacement for BC327-016G in circuits requiring 800 mA operation.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts are packaged in TO-92-3 (TO-226-3) through-hole configuration, maintaining identical mechanical compatibility with the BC327-016G.

Q: What compliance certifications apply to the substitute parts?

A: BC32740BU and BC32725BU are ROHS3 compliant. All substitute parts carry REACH unaffected status and EAR99 export classification, matching the regulatory profile of the original BC327-016G.

Q: Can 2N4403BU be used in applications designed for BC327-016G?

A: 2N4403BU is suitable only for applications where the maximum collector current requirement does not exceed 600 mA. The 40 V breakdown voltage is lower than the 45 V specification of BC327-016G; circuits operating near the 45 V limit require evaluation. The transition frequency of 200 MHz is lower than the original 260 MHz.

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