BC214LB Equivalent & Substitute Parts

Part Overview

The BC214LB is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and a transition frequency of 200 MHz. The BC214LB is packaged in a TO-92-3 through-hole configuration with a maximum power dissipation of 625 mW.

The BC214LB carries an obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for legacy systems and applications.

Substiute Parts

BC214LB
onsemiIn Stock: 821BC214LB Datasheet
BC214LB
Current Part
PN2907ATA
onsemiIn Stock: 1558PN2907ATA Datasheet
PN2907ATA
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2 mA, 5 V
Power - Max 625 mW
Frequency - Transition 200 MHz
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the BC214LB is determined by electrical and mechanical compatibility within the PNP bipolar junction transistor category. The critical parameters governing substitution are:

Electrical Compatibility Criteria:

  • Transistor type must be PNP
  • Collector-emitter breakdown voltage must equal or exceed the application requirement (30 V minimum for BC214LB)
  • Maximum collector current must equal or exceed the application requirement (500 mA minimum for BC214LB)
  • Transition frequency must equal or exceed 200 MHz
  • Operating temperature range must encompass -55°C to 150°C
  • Power dissipation capability must equal or exceed 625 mW

Mechanical Compatibility Criteria:

  • Package type must be TO-92-3 through-hole configuration
  • Pin configuration must be compatible with BC214LB footprint

The PN2907ATA meets these substitution criteria. This device is a PNP bipolar junction transistor with enhanced electrical ratings (60 V breakdown voltage, 800 mA collector current) that exceed BC214LB specifications, identical transition frequency (200 MHz), matching operating temperature range, equivalent power dissipation (625 mW), and identical TO-92-3 through-hole packaging.

Parameter Comparison

Parameter BC214LB PN2907ATA Unit
Manufacturer onsemi onsemi
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 800 mA
Voltage - Collector Emitter Breakdown (Max) 30 60 V
Vce Saturation (Max) @ Ib, Ic 600 mV @ 5 mA, 100 mA 1.6 V @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2 mA, 5 V 100 @ 150 mA, 10 V
Power - Max 625 625 mW
Frequency - Transition 200 200 MHz
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Product Status Obsolete Active

Engineering Selection Recommendations

The PN2907ATA is a direct substitute for the BC214LB in applications requiring PNP bipolar junction transistor functionality within the specified electrical and thermal parameters.

Product Status Consideration: The BC214LB is classified as obsolete, while the PN2907ATA maintains active product status. Selection of the PN2907ATA ensures access to current manufacturing, documented supply chain availability, and ongoing technical support from onsemi.

Compliance and Certification: Both devices carry identical REACH compliance status (REACH Unaffected) and ECCN classification (EAR99). The PN2907ATA additionally carries RoHS3 compliance certification, providing enhanced environmental and regulatory alignment with modern manufacturing standards.

Electrical Performance: The PN2907ATA provides superior electrical ratings across all critical parameters. The 60 V collector-emitter breakdown voltage and 800 mA maximum collector current exceed BC214LB specifications, enabling operation in applications with higher voltage and current demands while maintaining backward compatibility with BC214LB-level requirements.

Packaging and Thermal Management: Both devices utilize identical TO-92-3 through-hole packaging and equivalent power dissipation ratings (625 mW), ensuring mechanical and thermal compatibility within existing circuit designs and PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the PN2907ATA directly replace the BC214LB in existing circuit designs?

A: Yes. The PN2907ATA is electrically and mechanically compatible with the BC214LB. Both devices are PNP bipolar junction transistors with identical TO-92-3 through-hole packaging, matching transition frequency (200 MHz), equivalent power dissipation (625 mW), and overlapping operating temperature ranges (-55°C to 150°C). The PN2907ATA provides enhanced voltage and current ratings that exceed BC214LB specifications, ensuring compatibility with applications designed for the BC214LB.

Q: What are the key differences between the BC214LB and PN2907ATA?

A: The primary differences are product status and electrical ratings. The BC214LB is obsolete, while the PN2907ATA is active. The PN2907ATA features a 60 V collector-emitter breakdown voltage compared to 30 V for the BC214LB, and a maximum collector current of 800 mA versus 500 mA. The PN2907ATA also carries RoHS3 compliance certification. Both devices maintain identical transition frequency, power dissipation, operating temperature range, and TO-92-3 packaging.

Q: Are there any pin configuration differences between these devices?

A: No. Both the BC214LB and PN2907ATA utilize the TO-92-3 through-hole package with identical pin configuration. Direct pin-for-pin substitution is supported without circuit modification.

Q: What is the significance of the PN2907ATA's higher voltage and current ratings?

A: The PN2907ATA's 60 V breakdown voltage and 800 mA collector current ratings provide design margin and flexibility for applications operating near the BC214LB's maximum specifications. These enhanced ratings do not compromise backward compatibility; applications designed within BC214LB limits (30 V, 500 mA) operate identically with the PN2907ATA.

Q: Does the PN2907ATA require different biasing or circuit design considerations?

A: No circuit redesign is required. The PN2907ATA operates as a direct functional equivalent within BC214LB-designed circuits. DC current gain (hFE) characteristics differ slightly between devices at different operating points, but both maintain sufficient gain for standard switching and amplification applications. Circuit performance remains consistent with BC214LB-based designs.

Q: What is the packaging difference between the BC214LB and PN2907ATA?

A: Both devices are supplied in TO-92-3 through-hole packages. The BC214LB is supplied as loose components, while the PN2907ATA is supplied in cut tape (CT) packaging. This packaging difference does not affect electrical performance or mechanical compatibility; only handling and inventory management procedures differ.

Q: Is the PN2907ATA suitable for high-temperature applications?

A: Yes. The PN2907ATA maintains the same operating temperature range as the BC214LB (-55°C to 150°C junction temperature), ensuring equivalent thermal performance in temperature-sensitive applications.

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