BC212L_D27Z Equivalent & Substitute Parts

Part Overview

The BC212L_D27Z is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 300 mA, collector-emitter breakdown voltage of 50 V, and maximum power dissipation of 625 mW in a through-hole TO-92-3 package. The BC212L_D27Z is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

BC212L_D27Z
onsemiIn Stock: 766BC212L_D27Z Datasheet
BC212L_D27Z
Current Part
2N3906TFR
onsemiIn Stock: 14052N3906TFR Datasheet
2N3906TFR
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 625 mW
Frequency - Transition 200 MHz
Operating Temperature Range -55 to 150 °C
Package / Case TO-92-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the BC212L_D27Z is determined by electrical and mechanical compatibility within the PNP bipolar transistor category. The primary substitution criteria are:

Electrical Parameters:

  • Transistor polarity (PNP)
  • Maximum collector current rating (must equal or exceed 300 mA for direct substitution)
  • Collector-emitter breakdown voltage (must equal or exceed 50 V for direct substitution)
  • Maximum power dissipation (must equal or exceed 625 mW)
  • Operating temperature range (must encompass -55°C to 150°C)

Mechanical Parameters:

  • Package type (TO-92-3 through-hole configuration)
  • Lead formation compatibility

The 2N3906TFR is identified as a substitute component. However, this device exhibits reduced electrical ratings in collector current (200 mA maximum versus 300 mA) and collector-emitter breakdown voltage (40 V maximum versus 50 V). These reductions indicate that the 2N3906TFR is suitable only for applications where the circuit design operates within the lower electrical envelope of this substitute device.

Parameter Comparison

Parameter BC212L_D27Z 2N3906TFR Unit
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 300 200 mA
Voltage - Collector Emitter Breakdown (Max) 50 40 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 5V 100 @ 10mA, 1V
Power - Max 625 625 mW
Frequency - Transition 200 250 MHz
Operating Temperature Range -55 to 150 -55 to 150 °C
Package / Case TO-92-3 TO-92-3
Mounting Type Through Hole Through Hole
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

BC212L_D27Z (Obsolete): The BC212L_D27Z is classified as obsolete and is no longer in active production. While inventory remains available (715 pieces), procurement of this device for new designs is not recommended due to long-term supply uncertainty.

2N3906TFR (Active Substitute): The 2N3906TFR is an active production device from onsemi and is RoHS3 compliant. This substitute is suitable for applications where circuit design parameters remain within the electrical specifications of the 2N3906TFR. The reduced maximum collector current (200 mA versus 300 mA) and reduced collector-emitter breakdown voltage (40 V versus 50 V) must be verified against circuit requirements prior to implementation. The 2N3906TFR exhibits superior transition frequency (250 MHz versus 200 MHz) and higher DC current gain, which may provide performance advantages in certain switching applications.

Both devices share identical maximum power dissipation (625 mW), operating temperature range (-55°C to 150°C), package configuration (TO-92-3), and regulatory compliance (REACH Unaffected, EAR99).

Frequently Asked Questions (FAQ)

Q: Can the 2N3906TFR directly replace the BC212L_D27Z in all applications?

A: No. The 2N3906TFR has reduced electrical ratings. Direct substitution is valid only when circuit design operates within the 2N3906TFR specifications: maximum collector current of 200 mA and maximum collector-emitter breakdown voltage of 40 V. Applications requiring the full 300 mA collector current or 50 V breakdown voltage of the BC212L_D27Z cannot use the 2N3906TFR without circuit redesign.

Q: Are the packages physically identical?

A: Yes. Both the BC212L_D27Z and 2N3906TFR use the TO-92-3 through-hole package with formed leads. Physical board layout and mechanical mounting are compatible.

Q: What is the difference in DC current gain between these devices?

A: The BC212L_D27Z specifies a minimum DC current gain (hFE) of 60 at 2 mA collector current and 5 V collector-emitter voltage. The 2N3906TFR specifies a minimum DC current gain of 100 at 10 mA collector current and 1 V collector-emitter voltage. These measurements are taken at different operating points, making direct comparison dependent on actual circuit bias conditions.

Q: Does the 2N3906TFR offer any performance advantages?

A: The 2N3906TFR exhibits a higher transition frequency (250 MHz versus 200 MHz) and lower saturation voltage (400 mV versus 600 mV at comparable test conditions). These characteristics may provide faster switching response in high-frequency applications.

Q: Are there regulatory or compliance differences?

A: Both devices are REACH Unaffected and classified as EAR99. The 2N3906TFR is RoHS3 compliant, while the BC212L_D27Z does not specify RoHS compliance. For applications requiring RoHS compliance, the 2N3906TFR is the appropriate selection.

Q: What is the inventory status of each device?

A: The BC212L_D27Z has 715 pieces in stock as new original inventory. The 2N3906TFR has 1340 pieces in stock. For long-term procurement planning, the 2N3906TFR offers superior availability due to its active production status.

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