BC182LB Equivalent & Substitute Parts

Part Overview

The BC182LB is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 100 mA, collector-emitter breakdown voltage of 50 V, and a power dissipation rating of 350 mW in a Through Hole TO-92-3 package. The BC182LB is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity.

Substiute Parts

BC182LB
onsemiIn Stock: 2257BC182LB Datasheet
BC182LB
Current Part
2N5232A PBFREE
Central Semiconductor CorpIn Stock: 178042N5232A PBFREE Datasheet
2N5232A PBFREE
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 350 mW
Frequency - Transition 150 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the BC182LB is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Maximum collector current (Ic) must be equal to or greater than 100 mA
  • Collector-emitter breakdown voltage (VCEO) must be equal to or greater than 50 V
  • Power dissipation rating must support the application requirements
  • Operating temperature range must encompass the intended operating environment

Mechanical Compatibility Criteria:

  • Package type must be TO-92-3 (Through Hole)
  • Pin configuration must be compatible with TO-226-3 standard

The 2N5232A PBFREE meets these substitution criteria. Both devices share identical maximum collector current (100 mA) and collector-emitter breakdown voltage (50 V) specifications, compatible TO-92-3 packaging, and overlapping operating temperature ranges. The 2N5232A PBFREE provides enhanced power dissipation capability (625 mW versus 350 mW) and improved DC current gain characteristics, making it suitable for direct substitution in applications where the BC182LB is no longer available.

Parameter Comparison

Parameter BC182LB (onsemi) 2N5232A PBFREE (Central Semiconductor) Unit
Transistor Type NPN NPN
Current - Collector (Ic) Max 100 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Vce Saturation (Max) 600 mV @ 5mA, 100mA 125 mV @ 1mA, 10mA mV
Current - Collector Cutoff (Max) 15 30 nA
DC Current Gain (hFE) Min 40 @ 10µA, 5V 250 @ 2mA, 5V
Power - Max 350 625 mW
Operating Temperature Range -55 to 150 -65 to 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Product Status Obsolete Active

Engineering Selection Recommendations

The 2N5232A PBFREE is the qualified substitute for the BC182LB based on the following engineering criteria:

Product Status Alignment: The BC182LB is classified as obsolete, while the 2N5232A PBFREE maintains active product status with current manufacturing and distribution support. This ensures long-term availability and supply chain continuity.

Electrical Specification Compatibility: Both devices share identical maximum ratings for collector current (100 mA) and collector-emitter breakdown voltage (50 V), ensuring direct functional equivalence in circuit applications. The 2N5232A PBFREE provides superior power dissipation capability (625 mW versus 350 mW), offering additional thermal margin in power-constrained applications.

Compliance and Certification: The 2N5232A PBFREE carries RoHS3 compliance certification, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and EAR99 export classification.

Mechanical Compatibility: Identical TO-92-3 Through Hole packaging ensures direct pin-compatible replacement without circuit board modification or redesign.

Frequently Asked Questions (FAQ)

Q: Can the 2N5232A PBFREE be used as a direct replacement for the BC182LB in existing designs?

A: Yes. Both devices share identical maximum collector current (100 mA) and collector-emitter breakdown voltage (50 V) specifications with compatible TO-92-3 packaging. Direct substitution is supported without circuit modification.

Q: What are the key differences between these two transistors?

A: The primary differences are product status (BC182LB is obsolete; 2N5232A PBFREE is active), power dissipation rating (350 mW versus 625 mW), DC current gain characteristics (40 minimum versus 250 minimum), and Vce saturation voltage. The 2N5232A PBFREE provides enhanced performance margins across these parameters.

Q: Are there any temperature range limitations when substituting the 2N5232A PBFREE for the BC182LB?

A: No. The 2N5232A PBFREE operating temperature range (-65°C to 150°C) encompasses the BC182LB range (-55°C to 150°C), ensuring compatibility across all intended operating environments.

Q: Does the 2N5232A PBFREE require any circuit modifications for substitution?

A: No circuit modifications are required. The TO-92-3 package pinout is identical, and electrical specifications are compatible. The device can be installed directly into existing PCB footprints designed for the BC182LB.

Q: What compliance certifications apply to the 2N5232A PBFREE?

A: The 2N5232A PBFREE is RoHS3 compliant and maintains REACH Unaffected status, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: Is the higher DC current gain of the 2N5232A PBFREE (250 versus 40) a concern for substitution?

A: No. Higher DC current gain is not detrimental to substitution. This characteristic provides improved amplification efficiency and may reduce base drive requirements in switching applications, offering performance benefits over the original BC182LB specification.

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