BC182B Equivalent & Substitute Parts

Part Overview

The BC182B is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 350 mW power dissipation in a Through Hole TO-92 package. The BC182B is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Substiute Parts

BC182B

onsemiIn Stock: 5726BC182B Datasheet

Current PartRFQ

MMBT100

onsemiIn Stock: 65415MMBT100 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BC182B is determined by electrical parameter compatibility within the NPN transistor category. The critical parameters governing substitution are:

Electrical Compatibility Criteria:

• Transistor polarity (NPN type)
• Voltage rating (Vce breakdown minimum 50 V or higher)
• Current rating (Ic maximum 100 mA or higher)
• Power dissipation (350 mW or higher)
• Frequency response (200 MHz or higher)
• Operating temperature range (-55°C to 150°C or broader)

Mechanical Compatibility Criteria:

• Package type (Through Hole or Surface Mount alternatives)
• Pin configuration (3-pin standard BJT configuration)

The MMBT100 meets all electrical parameters while offering enhanced specifications in collector current (500 mA) and transition frequency (250 MHz). However, it utilizes Surface Mount SOT-23-3 packaging rather than Through Hole TO-92 mounting, requiring circuit board redesign for direct substitution.

Parameter Comparison

Engineering Selection Recommendations

For Direct Electrical Substitution:

The MMBT100 provides electrical compatibility with the BC182B across all critical parameters. The MMBT100 offers superior specifications in collector current capacity (500 mA versus 100 mA) and transition frequency (250 MHz versus 200 MHz), making it suitable for applications requiring the BC182B's electrical performance envelope.

Voltage Rating Consideration:

The MMBT100 collector-emitter breakdown voltage is rated at 45 V, compared to the BC182B's 50 V rating. Applications operating near the 50 V maximum rating require verification that the 5 V reduction does not compromise circuit margin. For applications with adequate voltage headroom below 45 V, this difference is not limiting.

Packaging and Compliance:

The BC182B is obsolete and RoHS non-compliant. The MMBT100 is actively manufactured and ROHS3 compliant, providing long-term availability and regulatory alignment. However, the MMBT100 uses Surface Mount SOT-23-3 packaging versus the BC182B's Through Hole TO-92 package, necessitating printed circuit board redesign for implementation.

Current Gain Characteristics:

The BC182B specifies minimum DC current gain (hFE) of 180 at 2 mA and 5 V. The MMBT100 specifies minimum hFE of 100 at 150 mA and 5 V. These measurements occur at different operating points. Circuit designs dependent on the BC182B's higher gain at low collector currents require gain verification with MMBT100 at the actual operating current.

Frequently Asked Questions (FAQ)

Q: Can the MMBT100 replace the BC182B in existing Through Hole circuit boards?

A: Electrical substitution is possible; however, mechanical substitution requires modification. The MMBT100 uses SOT-23-3 Surface Mount packaging while the BC182B uses TO-92 Through Hole packaging. Direct socket replacement is not feasible without circuit board redesign or use of adapter components.

Q: What is the significance of the 5 V difference in collector-emitter breakdown voltage?

A: The BC182B is rated for 50 V maximum Vce breakdown; the MMBT100 is rated for 45 V. For applications operating below 45 V, this difference is not limiting. Applications requiring operation near or above 45 V must verify adequate circuit margin exists with the reduced rating.

Q: How do the DC current gain specifications compare between these parts?

A: The BC182B specifies hFE minimum of 180 at 2 mA collector current and 5 V Vce. The MMBT100 specifies hFE minimum of 100 at 150 mA collector current and 5 V Vce. These measurements occur at different operating points. Circuits designed around the BC182B's gain characteristics at low collector currents require verification that MMBT100 gain is adequate at the actual circuit operating current.

Q: Why is the MMBT100 listed as a substitute if it has lower voltage and gain ratings?

A: The MMBT100 meets or exceeds the BC182B's electrical requirements for most general-purpose applications. The 45 V rating accommodates applications with adequate voltage margin below this level. The lower specified gain at high current reflects different measurement conditions; actual gain performance depends on circuit operating point. The MMBT100's higher collector current capacity (500 mA) and transition frequency (250 MHz) provide design margin for switching and amplification functions.

Q: What compliance advantages does the MMBT100 offer?

A: The MMBT100 is ROHS3 compliant and actively manufactured, whereas the BC182B is obsolete and RoHS non-compliant. For new designs and long-term production support, the MMBT100 provides regulatory alignment and assured supply continuity.

Q: Are there Through Hole alternatives to the BC182B?

A: The provided substitute list contains only the MMBT100. For Through Hole package requirements, alternative NPN transistors with equivalent electrical specifications in TO-92 packaging may exist from other manufacturers; however, such alternatives are not included in this reference.