BAY80 Equivalent & Substitute Parts

Part Overview

The BAY80 is a general-purpose silicon rectifier diode manufactured by onsemi, rated for 150 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole axial package. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating available active alternatives.

Substiute Parts

BAY80
onsemiIn Stock: 1012BAY80 Datasheet
BAY80
Current Part
1N3595
Microchip TechnologyIn Stock: 719021N3595 Datasheet
1N3595
Parametric Equivalent
BAV20,143
Nexperia USA Inc.In Stock: 5583BAV20,143 Datasheet
BAV20,143
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 200 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 150 mA V
Reverse Recovery Time (trr) 60 ns
Current - Reverse Leakage @ Vr 100 nA @ 120 V nA
Capacitance @ Vr, F 6 pF @ 0V, 1MHz
Operating Temperature - Junction (Max) 175 °C
Mounting Type Through Hole -
Package / Case DO-204AH, DO-35, Axial -
Technology Standard -

Substitute Part Grouping Explanation

Substitute parts for the BAY80 are classified into two categories based on parametric alignment and product status:

Parametric Equivalent (1N3595): This part maintains the same average rectified current rating (200 mA) and through-hole axial mounting configuration. The reverse voltage rating is reduced to 125 V, which represents a lower voltage capability. This part is active in production and suitable for applications where the 125 V rating is sufficient.

Similar Substitute (BAV20,143): This part matches the original 150 V reverse voltage rating and exceeds the current rating at 250 mA. It maintains the same maximum junction temperature (175°C) and through-hole mounting type. The reverse recovery time is improved at 50 ns compared to the original 60 ns specification. This part is active in production and available in cut tape packaging.

Substitution logic is based on the following allowed parameters:

  • Voltage - DC Reverse (Vr) (Max): Equal or greater than 150 V
  • Current - Average Rectified (Io): Equal to or greater than 200 mA
  • Mounting Type: Through Hole
  • Operating Temperature - Junction: Equal to or greater than 175°C
  • Technology: Standard rectifier diode classification

Parameter Comparison

Parameter BAY80 (Main Part) 1N3595 (Parametric Equivalent) BAV20,143 (Similar Substitute)
Manufacturer onsemi Microchip Technology Nexperia USA Inc.
Product Status Obsolete Active Active
Voltage - DC Reverse (Vr) (Max) 150 V 125 V 150 V
Current - Average Rectified (Io) 200 mA 200 mA 250 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 150 mA 1 V @ 200 mA 1.25 V @ 200 mA
Reverse Recovery Time (trr) 60 ns 3 µs 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 120 V 1 nA @ 125 V 100 nA @ 150 V
Capacitance @ Vr, F 6 pF @ 0V, 1MHz Not specified 5 pF @ 0V, 1MHz
Operating Temperature - Junction (Max) 175°C 150°C 175°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial Axial DO-204AH, DO-35, Axial
Technology Standard Standard Fast Recovery
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99

Engineering Selection Recommendations

For Direct Replacement (Preferred): The BAV20,143 is the recommended substitute when the BAY80 is unavailable. It maintains the 150 V reverse voltage rating, exceeds the current requirement at 250 mA, and matches the maximum junction temperature specification. The part is active in production with REACH compliance and identical export classification (EAR99). The improved reverse recovery time (50 ns versus 60 ns) provides enhanced performance characteristics. This part is available in cut tape packaging and supports production continuity.

For Voltage-Reduced Applications: The 1N3595 is suitable only for applications where the reverse voltage requirement does not exceed 125 V. While it maintains the 200 mA current rating and through-hole mounting, the maximum junction temperature is limited to 150°C, which is 25°C below the BAY80 specification. This part is active in production and REACH compliant but introduces thermal and voltage derating constraints.

Compliance Considerations: Both substitute parts carry REACH Unaffected status and EAR99 export classification, matching the regulatory profile of the original BAY80. Selection should prioritize the BAV20,143 for applications requiring the full 150 V rating and 175°C junction temperature capability.

Frequently Asked Questions (FAQ)

Q: Can the 1N3595 be used as a direct replacement for the BAY80?

A: The 1N3595 is a parametric equivalent only for applications where the reverse voltage requirement does not exceed 125 V. The BAY80 is rated for 150 V, and the 1N3595 cannot be used in circuits requiring the full 150 V rating. Additionally, the 1N3595 has a maximum junction temperature of 150°C compared to the BAY80's 175°C, which may limit thermal performance in high-temperature environments.

Q: What are the key differences between the BAV20,143 and the BAY80?

A: The BAV20,143 maintains the same 150 V reverse voltage rating and 175°C maximum junction temperature as the BAY80. The primary differences are: (1) current rating increased from 200 mA to 250 mA, (2) reverse recovery time improved from 60 ns to 50 ns, (3) forward voltage slightly higher at 1.25 V @ 200 mA versus 1 V @ 150 mA, and (4) technology classified as fast recovery rather than standard. The BAV20,143 is active in production and available in cut tape packaging.

Q: Are the package dimensions identical between the BAY80 and substitute parts?

A: Both the BAY80 and BAV20,143 support DO-204AH, DO-35, and axial package configurations. The 1N3595 is available in axial package only. Physical compatibility depends on the specific supplier device package designation. The BAY80 supplier device package is DO-35, while the BAV20,143 supplier device package is ALF2. Mechanical fit must be verified against the actual component footprint in the application circuit.

Q: What is the significance of the reverse recovery time difference between these parts?

A: The BAY80 has a reverse recovery time of 60 ns, the BAV20,143 has 50 ns, and the 1N3595 has 3 µs. Reverse recovery time affects switching speed and switching losses in rectifier applications. The BAV20,143's 50 ns specification is superior to the BAY80's 60 ns, while the 1N3595's 3 µs represents significantly slower switching performance. For high-frequency applications, the BAV20,143 provides improved characteristics.

Q: Are there any compliance or regulatory differences between the substitute parts?

A: All three parts (BAY80, 1N3595, and BAV20,143) carry REACH Unaffected status and EAR99 export classification. The BAV20,143 is additionally RoHS3 compliant. Moisture sensitivity level (MSL) is rated as 1 (Unlimited) for both the BAY80 and BAV20,143. No regulatory barriers exist to substitution based on the provided compliance data.

Q: Which substitute part should be selected for new designs?

A: The BAV20,143 is the recommended choice for new designs requiring a 150 V, 200+ mA general-purpose rectifier diode in through-hole axial configuration. It is active in production, maintains full voltage and temperature specifications, and provides improved reverse recovery time performance. The 1N3595 should be selected only when voltage requirements are confirmed to be 125 V or lower.

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