BAW76_T50R Equivalent & Substitute Parts

Part Overview

The BAW76_T50R is a general-purpose rectifier diode manufactured by onsemi, rated for 75 V DC reverse voltage and 300 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs. Substitute parts must maintain functional compatibility within the electrical and mechanical constraints of the original specification.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	75	V
Current - Average Rectified (Io)	300	mA
Voltage - Forward (Vf) (Max) @ If	1 V @ 100 mA	V
Reverse Recovery Time (trr)	4	ns
Current - Reverse Leakage @ Vr	100 nA @ 50 V	nA
Capacitance @ Vr, F	2	pF @ 0V, 1MHz
Mounting Type	Through Hole	-
Package / Case	DO-204AH, DO-35, Axial	-
Operating Temperature - Junction (Max)	175	°C
Technology	Standard	-

Substitute Part Grouping Explanation

Substitution of the BAW76_T50R is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Substitute must equal or exceed 75 V
Current - Average Rectified (Io): Substitute must equal or exceed 300 mA
Reverse Recovery Time (trr): Substitute must equal or be faster than 4 ns
Package / Case: Substitute must be DO-35 through-hole axial configuration
Voltage - Forward (Vf) (Max) @ If: Substitute must not exceed 1 V @ 100 mA
Operating Temperature - Junction: Substitute must support 175°C maximum

Identified Substitutes:

BAW76-TR (Vishay General Semiconductor - Diodes Division): Meets current and forward voltage specifications. Voltage rating of 50 V is below the 75 V requirement of the original part. This substitute is suitable only for applications where the actual reverse voltage stress does not exceed 50 V.

1N914B (Taiwan Semiconductor Corporation): Exceeds voltage rating at 100 V. Current rating of 150 mA is below the 300 mA requirement. This substitute is suitable only for applications where the actual average rectified current does not exceed 150 mA.

Parameter Comparison

Parameter	BAW76_T50R (Main)	BAW76-TR (Substitute)	1N914B (Substitute)
Manufacturer	onsemi	Vishay General Semiconductor - Diodes Division	Taiwan Semiconductor Corporation
Product Status	Obsolete	Active	Active
Voltage - DC Reverse (Vr) (Max)	75 V	50 V	100 V
Current - Average Rectified (Io)	300 mA	300 mA	150 mA
Voltage - Forward (Vf) (Max) @ If	1 V @ 100 mA	1 V @ 100 mA	1 V @ 100 mA
Reverse Recovery Time (trr)	4 ns	4 ns	4 ns
Current - Reverse Leakage @ Vr	100 nA @ 50 V	100 nA @ 50 V	5 µA @ 75 V
Capacitance @ Vr, F	2 pF @ 0V, 1MHz	2 pF @ 0V, 1MHz	4 pF @ 0V, 1MHz
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max)	175°C	175°C	150°C
Technology	Standard	Standard	Standard

Engineering Selection Recommendations

BAW76-TR Selection: The BAW76-TR is an active product manufactured by Vishay General Semiconductor - Diodes Division and carries AEC-Q101 automotive qualification with ROHS3 compliance. This substitute maintains identical current capacity (300 mA), forward voltage characteristics (1 V @ 100 mA), and recovery time (4 ns) as the original BAW76_T50R. The voltage rating is reduced to 50 V. Selection of BAW76-TR is appropriate for applications where the circuit design ensures reverse voltage stress remains within 50 V limits.

1N914B Selection: The 1N914B is an active product manufactured by Taiwan Semiconductor Corporation with ROHS3 compliance. This substitute provides a higher voltage rating (100 V) than the original part. The current capacity is reduced to 150 mA, and the operating temperature range is limited to 150°C maximum. Selection of 1N914B is appropriate for applications where the circuit design ensures average rectified current remains within 150 mA limits and operating temperature does not exceed 150°C.

Frequently Asked Questions (FAQ)

Q: Can BAW76-TR be used as a direct replacement for BAW76_T50R?

A: BAW76-TR is mechanically and functionally compatible in terms of package (DO-35 through-hole axial), forward voltage (1 V @ 100 mA), current capacity (300 mA), and recovery time (4 ns). The voltage rating difference (50 V versus 75 V) requires circuit analysis to confirm that reverse voltage stress does not exceed 50 V under all operating conditions.

Q: Can 1N914B be used as a direct replacement for BAW76_T50R?

A: 1N914B is mechanically compatible (DO-35 through-hole axial package) and shares identical forward voltage (1 V @ 100 mA) and recovery time (4 ns) characteristics. The current capacity is reduced to 150 mA, and the maximum operating temperature is 150°C. Circuit analysis is required to confirm that average rectified current does not exceed 150 mA and that junction temperature remains below 150°C.

Q: What are the key differences between the substitute parts?

A: BAW76-TR maintains the 300 mA current capacity of the original part but reduces voltage rating to 50 V. It includes automotive qualification (AEC-Q101). The 1N914B increases voltage rating to 100 V but reduces current capacity to 150 mA and lowers maximum junction temperature to 150°C.

Q: Are all substitute parts available in the same package?

A: All parts (BAW76_T50R, BAW76-TR, and 1N914B) are available in DO-35 through-hole axial package configuration, ensuring mechanical compatibility in existing PCB layouts.

Q: What compliance certifications apply to each substitute?

A: BAW76-TR carries ROHS3 compliance and AEC-Q101 automotive qualification. The 1N914B carries ROHS3 compliance. Both substitutes are REACH unaffected and classified as EAR99 for export control purposes.

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