BAW62,133 Equivalent & Substitute Parts

Part Overview

The BAW62,133 is a general-purpose rectifier diode manufactured by NXP USA Inc., rated for 75 V DC reverse voltage and 250 mA average rectified current. The device features fast recovery characteristics with a 4 ns reverse recovery time and is housed in a DO-204AH (DO-35) axial through-hole package. This diode is classified as Active product status and is RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatible mechanical packaging. Substitutes are selected where voltage rating, current capacity, recovery time, and mounting type align with or exceed the original specification.

Substiute Parts

BAW62,133
NXP USA Inc.In Stock: 738BAW62,133 Datasheet
BAW62,133
Current Part
1N4148
Taiwan Semiconductor CorporationIn Stock: 2125851N4148 Datasheet
1N4148
MFR Recommended
1N4148-1
Microchip TechnologyIn Stock: 24441N4148-1 Datasheet
1N4148-1
MFR Recommended
1N4148-G
Comchip TechnologyIn Stock: 222861N4148-G Datasheet
1N4148-G
MFR Recommended
1N4150-1
Microchip TechnologyIn Stock: 38761N4150-1 Datasheet
1N4150-1
MFR Recommended
1N4153-1
Microchip TechnologyIn Stock: 18391N4153-1 Datasheet
1N4153-1
MFR Recommended
1N4447
Microchip TechnologyIn Stock: 12381N4447 Datasheet
1N4447
MFR Recommended
1N4448
Microchip TechnologyIn Stock: 502361N4448 Datasheet
1N4448
MFR Recommended
1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
MFR Recommended
1N914
Good-Ark SemiconductorIn Stock: 70051N914 Datasheet
1N914
MFR Recommended
1N914
Good-Ark SemiconductorIn Stock: 70051N914 Datasheet
1N914
MFR Recommended
1N914B
Taiwan Semiconductor CorporationIn Stock: 202141N914B Datasheet
1N914B
MFR Recommended
BAW62,143
NXP USA Inc.In Stock: 1092BAW62,143 Datasheet
BAW62,143
Parametric Equivalent

Key Parameters

Parameter BAW62,133 Value Unit
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 250 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA V @ mA
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V µA @ V
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max) 200 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution logic for the BAW62,133 is based on the following critical parameters:

Voltage Rating (Vr): Substitute parts must have a DC reverse voltage rating equal to or greater than 75 V to ensure safe operation in the same circuit application.

Current Capacity (Io): Substitute parts must support the required average rectified current. The BAW62,133 is rated for 250 mA; substitutes with equal or higher current ratings are acceptable.

Recovery Characteristics: The BAW62,133 exhibits fast recovery (≤ 500 ns, > 200 mA) with a 4 ns reverse recovery time. Substitutes with matching or faster recovery times maintain equivalent switching performance.

Mounting and Package: All substitutes must use through-hole mounting with DO-204AH (DO-35) axial packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Compliance: RoHS3 compliance is preferred to maintain regulatory alignment with the original part.

Substitutes are grouped into two categories:

  1. Direct Equivalents: Parts matching or exceeding all critical parameters (voltage, current, recovery time, package).
  2. Functional Alternatives: Parts with reduced current ratings or voltage specifications that remain suitable for lower-stress applications within the same circuit topology.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [mA] Vf (Max) @ If trr [ns] Package Product Status RoHS Status
BAW62,133 NXP USA Inc. 75 250 1 V @ 100 mA 4 DO-35 Active ROHS3 Compliant
1N4148 Taiwan Semiconductor Corporation 100 150 1 V @ 10 mA 4 DO-35 Active ROHS3 Compliant
1N4148-1 Microchip Technology 75 200 1.2 V @ 100 mA 20 DO-35 Active RoHS non-compliant
1N4148-G Comchip Technology 75 150 1 V @ 10 mA DO-35 Obsolete ROHS3 Compliant
1N4150-1 Microchip Technology 50 200 1 V @ 200 mA 4 DO-35 Active RoHS non-compliant
1N4153-1 Microchip Technology 50 150 880 mV @ 20 mA 4 DO-35 Active RoHS non-compliant
1N4447 Microchip Technology 75 200 1 V @ 20 mA 4 DO-35 Active RoHS non-compliant
1N4448 Microchip Technology 75 200 1 V @ 100 mA 4 DO-35 Discontinued at DiGi Electronics RoHS non-compliant
1N4454 Microchip Technology 75 200 1 V @ 10 mA 4 DO-35 Active RoHS non-compliant
1N914 Good-Ark Semiconductor 100 75 1 V @ 10 mA 4 DO-35 Active ROHS3 Compliant

Engineering Selection Recommendations

Preferred Substitutes (Active Status, RoHS3 Compliant):

The 1N4148 (Taiwan Semiconductor Corporation) is the primary recommended substitute. It exceeds the BAW62,133 voltage rating (100 V vs. 75 V) and maintains a 4 ns recovery time. Although the current rating is lower at 150 mA, this part is suitable for applications where the circuit current demand does not exceed 150 mA. RoHS3 compliance ensures regulatory alignment.

The 1N914 (Good-Ark Semiconductor) is an alternative for lower-current applications (75 mA maximum). It provides 100 V voltage rating and 4 ns recovery time with RoHS3 compliance. This part is appropriate for signal-level switching applications.

Secondary Substitutes (Active Status, RoHS Non-Compliant):

The 1N4447 and 1N4454 (both Microchip Technology) match the 75 V voltage rating and provide 200 mA current capacity with 4 ns recovery time. These parts are electrically compatible but do not meet RoHS3 compliance requirements.

The 1N4148-1 (Microchip Technology) provides 75 V rating and 200 mA capacity but exhibits a longer 20 ns recovery time and higher forward voltage (1.2 V @ 100 mA). This part is acceptable where recovery speed is not critical.

Not Recommended:

The 1N4148-G (Comchip Technology) is obsolete and should not be selected for new designs.

The 1N4448 (Microchip Technology) is discontinued at DiGi Electronics and should not be used for production applications.

The 1N4150-1 and 1N4153-1 (Microchip Technology) have reduced voltage ratings (50 V) and are unsuitable for 75 V applications.

Frequently Asked Questions (FAQ)

Q: Can the 1N4148 replace the BAW62,133 in all applications?

A: The 1N4148 is suitable for applications where the circuit current does not exceed 150 mA. The BAW62,133 is rated for 250 mA, so the 1N4148 cannot be used in higher-current circuits. Verify the actual circuit current requirement before substitution.

Q: What is the difference between fast recovery and small signal diodes?

A: The BAW62,133 is classified as a fast recovery diode with a 4 ns reverse recovery time and supports currents greater than 200 mA. Small signal diodes (such as the 1N4148) have recovery times ≤ 200 mA and are optimized for switching applications at lower current levels. Both types use the same DO-35 package but have different performance characteristics.

Q: Are all substitute parts in the same DO-35 package?

A: Yes. All listed substitute parts use the DO-204AH (DO-35) axial through-hole package, ensuring mechanical compatibility with existing PCB layouts. No package conversion is required.

Q: Why do some substitutes have lower current ratings?

A: The 1N914 (75 mA) and 1N4148 (150 mA) are designed for signal-level switching applications rather than power rectification. These parts are suitable only if the circuit current requirement is within their rated capacity. For applications requiring the full 250 mA capacity of the BAW62,133, select substitutes with 200 mA or higher ratings.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the part does not contain restricted substances such as lead, cadmium, or mercury. The BAW62,133 and 1N4148 are RoHS3 compliant. Non-compliant parts may face restrictions in certain markets or applications.

Q: Can I use a 100 V rated diode in a 75 V circuit?

A: Yes. A diode with a higher voltage rating (such as the 1N4148 at 100 V) can be used in a 75 V circuit. The higher rating provides additional safety margin. However, the reverse leakage current and capacitance characteristics may differ slightly.

Q: What is reverse recovery time and why does it matter?

A: Reverse recovery time (trr) is the time required for a diode to stop conducting after the applied voltage reverses. The BAW62,133 has a 4 ns recovery time, which is fast. Longer recovery times (such as 20 ns in the 1N4148-1) may cause switching delays in high-frequency applications. For general-purpose rectification, recovery time differences are typically not critical.

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