BAW56WT-TP Equivalent & Substitute Parts

Part Overview

The BAW56WT-TP is a general-purpose diode array manufactured by Micro Commercial Co, configured as a 1 Pair Common Anode device in SC-70, SOT-323 surface mount package. This component operates at 75 V DC reverse voltage with 150 mA average rectified current per diode and is classified as Active product status with full RoHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility across qualified suppliers.

Substiute Parts

BAW56WT-TP

Micro Commercial CoIn Stock: 2500BAW56WT-TP Datasheet

Current PartRFQ

BAW56WTHE3-TP

Micro Commercial CoIn Stock: 6794BAW56WTHE3-TP Datasheet

Parametric EquivalentRFQ

BAS70-06W,115

Nexperia USA Inc.In Stock: 23637BAS70-06W,115 Datasheet

SimilarRFQ

BAS7006WH6327XTSA1

Infineon TechnologiesIn Stock: 1409BAS7006WH6327XTSA1 Datasheet

SimilarRFQ

BAS70W-06-7-F

Diodes IncorporatedIn Stock: 6675BAS70W-06-7-F Datasheet

SimilarRFQ

BAW56W-7-F

Diodes IncorporatedIn Stock: 40986BAW56W-7-F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BAW56WT-TP are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Full Substitution): Parts that match all critical electrical parameters including voltage rating (75 V), current rating (150 mA per diode), forward voltage (1.25 V @ 150 mA), reverse recovery time (4 ns), and reverse leakage current (2.5 µA @ 75 V). These parts maintain identical diode configuration (1 Pair Common Anode), package type (SC-70, SOT-323), and technology classification (Standard). Parametric equivalents are direct replacements with no circuit redesign required.

Similar Parts (Functional Substitution with Derating): Parts that share the same package, configuration, and mounting type but operate at reduced voltage (70 V) and current (70 mA per diode) ratings. These Schottky technology devices exhibit lower forward voltage (1 V @ 15 mA) and significantly lower reverse leakage current (10 nA to 100 nA @ 50 V). Similar parts are suitable for applications where the BAW56WT-TP voltage and current specifications exceed circuit requirements. Substitution requires verification that the 70 V and 70 mA ratings satisfy the application's maximum operating conditions.

Key Parameters Determining Substitution:

• Diode configuration (1 Pair Common Anode)
• Package type (SC-70, SOT-323)
• Voltage - DC Reverse rating
• Current - Average Rectified rating
• Technology type (Standard vs. Schottky)
• Mounting type (Surface Mount)

Parameter Comparison

Engineering Selection Recommendations

Parametric Equivalent Selection:

BAW56WTHE3-TP is a parametric equivalent to BAW56WT-TP with identical electrical specifications (75 V, 150 mA, 1.25 V forward voltage, 4 ns recovery time, 2.5 µA leakage). This part is qualified to AEC-Q101 automotive standard and carries Automotive grade designation, making it suitable for applications requiring automotive-level reliability. Both parts maintain Active product status and full RoHS3 compliance. Selection between BAW56WT-TP and BAW56WTHE3-TP depends on whether automotive qualification is required for the application.

BAW56W-7-F is a parametric equivalent manufactured by Diodes Incorporated with identical electrical specifications and package type. This part extends the operating temperature range to -65°C to 150°C compared to the BAW56WT-TP range of -55°C to 150°C, providing enhanced low-temperature performance. All three parametric equivalents (BAW56WT-TP, BAW56WTHE3-TP, BAW56W-7-F) are direct substitutes with no circuit modification required.

Similar Part Selection (Schottky Technology):

BAS70-06W,115 (Nexperia), BAS7006WH6327XTSA1 (Infineon), and BAS70W-06-7-F (Diodes Incorporated) are Schottky diode arrays with reduced voltage (70 V) and current (70 mA) ratings. These parts are suitable for applications where the BAW56WT-TP specifications exceed circuit requirements. The Schottky technology provides lower forward voltage (1 V @ 15 mA) and significantly reduced reverse leakage current (10 nA to 100 nA @ 50 V), resulting in lower power dissipation and improved switching performance in low-voltage applications. All similar parts maintain Active product status, RoHS3 compliance, and identical SC-70, SOT-323 packaging.

BAS7006WH6327XTSA1 exhibits the lowest reverse leakage current (100 nA @ 50 V) and fastest reverse recovery time (100 ps), making it optimal for high-frequency switching applications. BAS70W-06-7-F provides a balance of performance with 5 ns recovery time and 100 nA leakage current. BAS70-06W,115 offers standard Schottky performance with 10 µA leakage current specification.

Frequently Asked Questions (FAQ)

Q: Can BAW56WTHE3-TP directly replace BAW56WT-TP in production?

A: Yes. BAW56WTHE3-TP is a parametric equivalent with identical electrical specifications (75 V, 150 mA, 1.25 V forward voltage, 4 ns recovery time, 2.5 µA leakage current) and package type (SC-70, SOT-323). The primary difference is AEC-Q101 automotive qualification and Automotive grade designation. Direct substitution is valid for all applications; automotive qualification is an additional benefit if required.

Q: What is the difference between BAW56W-7-F and BAW56WT-TP?

A: BAW56W-7-F is manufactured by Diodes Incorporated and is electrically identical to BAW56WT-TP with matching 75 V, 150 mA, 1.25 V forward voltage, and 4 ns recovery specifications. The key difference is the extended operating temperature range: BAW56W-7-F operates from -65°C to 150°C compared to BAW56WT-TP at -55°C to 150°C. This provides 10°C additional low-temperature capability. Both parts are direct substitutes with identical package and configuration.

Q: Can Schottky diodes (BAS70 series) replace the BAW56WT-TP?

A: Schottky diodes (BAS70-06W,115, BAS7006WH6327XTSA1, BAS70W-06-7-F) are functional substitutes only when the application voltage and current requirements do not exceed 70 V and 70 mA per diode. These parts operate at reduced ratings compared to the BAW56WT-TP (75 V, 150 mA). Schottky technology provides lower forward voltage (1 V vs. 1.25 V) and significantly lower reverse leakage current (10 nA to 100 nA vs. 2.5 µA), resulting in reduced power dissipation. Substitution requires verification that circuit maximum operating conditions remain within 70 V and 70 mA limits.

Q: Are all substitute parts available in the same SC-70, SOT-323 package?

A: Yes. All substitute parts listed (BAW56WTHE3-TP, BAW56W-7-F, BAS70-06W,115, BAS7006WH6327XTSA1, BAS70W-06-7-F) are packaged in SC-70, SOT-323 surface mount configuration. This ensures mechanical and electrical compatibility with PCB layouts designed for BAW56WT-TP. No board redesign or rework is required for package accommodation.

Q: What is the inventory status of substitute parts?

A: BAW56W-7-F has the highest inventory at 40,944 pieces. BAW56WTHE3-TP has 6,706 pieces available. BAS70-06W,115 has 23,540 pieces. BAS70W-06-7-F has 6,604 pieces. BAS7006WH6327XTSA1 has 1,331 pieces. All parts are listed as New Original In Stock.

Q: Which substitute part offers the best performance for high-frequency switching?

A: BAS7006WH6327XTSA1 (Infineon) provides the fastest reverse recovery time at 100 picoseconds and the lowest reverse leakage current at 100 nanoamperes @ 50 V. This Schottky device is optimized for high-frequency switching applications where fast switching speed and minimal leakage are critical. This part is suitable for applications operating within the 70 V and 70 mA ratings.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts (BAW56WTHE3-TP, BAW56W-7-F, BAS70-06W,115, BAS7006WH6327XTSA1, BAS70W-06-7-F) are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). All parts are REACH Unaffected and carry EAR99 ECCN classification.

Q: What is the difference between Standard and Schottky diode technology in these parts?

A: Standard technology diodes (BAW56WT-TP, BAW56WTHE3-TP, BAW56W-7-F) operate at higher voltage ratings (75 V) with higher forward voltage (1.25 V @ 150 mA) and moderate reverse leakage (2.5 µA @ 75 V). Schottky technology diodes (BAS70 series) operate at lower voltage ratings (70 V) with lower forward voltage (1 V @ 15 mA) and significantly lower reverse leakage (10 nA to 100 nA @ 50 V). Schottky devices provide faster switching and lower power dissipation but are limited to lower voltage applications.

Q: Is automotive qualification available for all substitute parts?

A: Only BAW56WTHE3-TP carries AEC-Q101 automotive qualification with Automotive grade designation. All other substitute parts are standard grade. If automotive qualification is required, BAW56WTHE3-TP is the only qualified option among the listed substitutes.