BAW56Q-7-F Equivalent & Substitute Parts

Part Overview

The BAW56Q-7-F is a general-purpose diode array manufactured by Diodes Incorporated, configured as a 1 Pair Common Anode device in a surface mount SOT-23-3 package. This component is rated for 75 V DC reverse voltage with 150 mA average rectified current per diode and is qualified to AEC-Q101 automotive standards. The part maintains Active product status with 95,200 units in current inventory. Substitute parts are identified when equivalent electrical and mechanical parameters are available from alternative manufacturers, enabling supply chain flexibility while maintaining circuit performance and compliance requirements.

Substiute Parts

BAW56Q-7-F

Diodes IncorporatedIn Stock: 95308BAW56Q-7-F Datasheet

Current PartRFQ

BAW56-HE3-08

Vishay General Semiconductor - Diodes DivisionIn Stock: 6163BAW56-HE3-08 Datasheet

DirectRFQ

BAW56-AU_R1_000A1

Panjit International Inc.In Stock: 1331BAW56-AU_R1_000A1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BAW56Q-7-F are identified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Diode Configuration: 1 Pair Common Anode (pin-compatible)
• Package / Case: TO-236-3, SC-59, SOT-23-3 (mechanical fit)
• Voltage - DC Reverse (Vr) (Max): 75 V minimum (circuit voltage rating)
• Current - Average Rectified (Io) (per Diode): 150 mA minimum (load current capacity)
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA (switching performance)
• Grade: Automotive (application requirement)
• Qualification: AEC-Q101 (compliance requirement)

Parts meeting all critical parameters are classified as direct substitutes. Parts with equivalent or superior electrical ratings within the same package and configuration are functionally interchangeable in the BAW56Q-7-F application circuit.

Parameter Comparison

Engineering Selection Recommendations

BAW56-AU_R1_000A1 (Panjit International Inc.)

This part is a direct substitute for the BAW56Q-7-F. Electrical parameters are identical: 75 V DC reverse voltage, 150 mA average rectified current, 1.25 V forward voltage at 150 mA, and 4 ns reverse recovery time. Both parts share identical reverse leakage current specifications (2.5 µA @ 75 V), identical package configuration (TO-236-3, SC-59, SOT-23-3), and both carry AEC-Q101 automotive qualification with ROHS3 compliance. Operating temperature range differs slightly (-55 to 150 °C versus -65 to 150 °C), with the BAW56Q-7-F providing extended low-temperature performance. The BAW56-AU_R1_000A1 is suitable for applications where the -55 °C minimum junction temperature meets circuit requirements.

BAW56-HE3-08 (Vishay General Semiconductor - Diodes Division)

This part provides higher current capacity (250 mA versus 150 mA) and is functionally compatible with the BAW56Q-7-F in applications where the 150 mA current rating is not exceeded. The DC reverse voltage rating is 70 V, which is 5 V lower than the BAW56Q-7-F. This part is suitable only for circuits where the maximum reverse voltage does not exceed 70 V. Both parts share identical forward voltage characteristics (1.25 V @ 150 mA), identical package configuration, and AEC-Q101 qualification. The BAW56-HE3-08 exhibits slightly longer reverse recovery time (6 ns versus 4 ns) and higher reverse leakage current (2.5 mA @ 70 V versus 2.5 µA @ 75 V). Operating temperature specification is provided as maximum only (150 °C) without minimum temperature definition. This part is suitable for supply chain alternatives when voltage and leakage specifications are acceptable for the application.

Frequently Asked Questions (FAQ)

Q: Can the BAW56-HE3-08 replace the BAW56Q-7-F in all applications?

A: The BAW56-HE3-08 is compatible only in applications where the maximum reverse voltage does not exceed 70 V. The BAW56Q-7-F is rated for 75 V. Additionally, the BAW56-HE3-08 exhibits higher reverse leakage current (2.5 mA @ 70 V) compared to the BAW56Q-7-F (2.5 µA @ 75 V). Verify circuit voltage requirements before substitution.

Q: Is the BAW56-AU_R1_000A1 a direct equivalent to the BAW56Q-7-F?

A: Yes. The BAW56-AU_R1_000A1 matches all critical electrical parameters: 75 V DC reverse voltage, 150 mA average rectified current, 1.25 V forward voltage at 150 mA, 4 ns reverse recovery time, and 2.5 µA reverse leakage current at 75 V. Both parts are packaged in TO-236-3, SC-59, SOT-23-3 and carry AEC-Q101 automotive qualification. The operating temperature range differs slightly, with the BAW56Q-7-F providing -65 °C minimum versus -55 °C for the BAW56-AU_R1_000A1.

Q: Are all substitute parts in the same physical package?

A: Yes. The BAW56Q-7-F, BAW56-HE3-08, and BAW56-AU_R1_000A1 are all packaged in TO-236-3, SC-59, SOT-23-3 with identical pin configurations (1 Pair Common Anode). All parts are surface mount devices suitable for the same PCB footprint.

Q: Do all substitute parts meet automotive qualification requirements?

A: Yes. The BAW56Q-7-F, BAW56-HE3-08, and BAW56-AU_R1_000A1 all carry AEC-Q101 automotive qualification and ROHS3 compliance. All parts are rated for automotive-grade applications.

Q: What is the difference in reverse recovery time between these parts?

A: The BAW56Q-7-F and BAW56-AU_R1_000A1 both specify 4 ns reverse recovery time. The BAW56-HE3-08 specifies 6 ns. This difference affects switching speed in high-frequency applications. The 2 ns difference is significant in circuits operating above 100 MHz.

Q: Which part has the lowest reverse leakage current?

A: The BAW56Q-7-F and BAW56-AU_R1_000A1 both specify 2.5 µA reverse leakage current at their respective rated voltages (75 V). The BAW56-HE3-08 specifies 2.5 mA reverse leakage current at 70 V, which is 1000 times higher. This difference is critical in precision analog circuits where leakage current affects circuit performance.

Q: Can the higher current rating of the BAW56-HE3-08 (250 mA) be used in place of the 150 mA rating?

A: Yes. The BAW56-HE3-08 with 250 mA current capacity is suitable for applications requiring up to 150 mA per diode. Higher current capacity does not create compatibility issues in lower-current applications. However, the 70 V reverse voltage rating and higher reverse leakage current must still be verified against circuit requirements.