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BAW56LT3 Equivalent & Substitute Parts
Part Overview
The BAW56LT3 is a general-purpose diode array featuring a 1 Pair Common Anode configuration rated for 70 V DC reverse voltage and 200 mA average rectified current per diode. Manufactured by onsemi in a surface mount SOT-23-3 package, this component is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts with active availability are necessary for ongoing design support and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Anode |
| Voltage - DC Reverse (Vr) (Max) | 70 V |
| Current - Average Rectified (Io) (per Diode) | 200 mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Reverse Recovery Time (trr) | 6 ns |
| Current - Reverse Leakage @ Vr | 2.5 µA @ 70 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | Standard |
Substitute Part Grouping Explanation
Substitution eligibility for the BAW56LT3 is determined by the following critical parameters:
Mandatory Matching Parameters:
- Diode Configuration: 1 Pair Common Anode
- Voltage - DC Reverse (Vr) (Max): 70 V minimum
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Mounting Type: Surface Mount
Allowable Variation Parameters:
- Current - Average Rectified (Io): Equal to or greater than 200 mA per diode
- Voltage - Forward (Vf): Equal to or less than 1.25 V @ 150 mA
- Reverse Recovery Time (trr): Equal to or less than 6 ns
- Operating Temperature - Junction: Maximum rating of 150°C or higher
- Product Status: Active status preferred for ongoing availability
The identified substitute parts meet or exceed the electrical and mechanical specifications of the BAW56LT3 while maintaining identical package geometry and pin configuration.
Parameter Comparison
| Parameter | BAW56LT3 (Main) | BAW56LT3G (Substitute) | BAW56-E3-08 (Substitute) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete | Active | Active |
| Diode Configuration | 1 Pair Common Anode | 1 Pair Common Anode | 1 Pair Common Anode |
| Voltage - DC Reverse (Vr) (Max) | 70 V | 70 V | 70 V |
| Current - Average Rectified (Io) (per Diode) | 200 mA (DC) | 200 mA (DC) | 250 mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | 1.25 V @ 150 mA | 1.25 V @ 150 mA |
| Reverse Recovery Time (trr) | 6 ns | 6 ns | 6 ns |
| Current - Reverse Leakage @ Vr | 2.5 µA @ 70 V | 2.5 µA @ 70 V | 2.5 µA @ 70 V |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | 150°C (Max) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
| Packaging Type | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Engineering Selection Recommendations
BAW56LT3G (onsemi): This substitute provides direct electrical and mechanical equivalence to the BAW56LT3. Both parts share identical specifications across all critical parameters including reverse voltage, forward voltage, reverse recovery time, and leakage current. The BAW56LT3G is manufactured by the same supplier (onsemi) and maintains the same base product number (BAW56). The primary advantage is active product status with significantly higher inventory availability (90,100 units in stock versus 925 units for the obsolete BAW56LT3). The BAW56LT3G is ROHS3 compliant, addressing regulatory requirements for new designs. Packaging is supplied in Tape & Reel format suitable for automated assembly.
BAW56-E3-08 (Vishay General Semiconductor - Diodes Division): This substitute offers enhanced current capability at 250 mA per diode, exceeding the 200 mA specification of the BAW56LT3. All other electrical parameters remain equivalent or superior. The part maintains identical package geometry (SOT-23-3) and pin configuration, ensuring direct mechanical compatibility. The BAW56-E3-08 is ROHS3 compliant and carries active product status with substantial inventory availability (35,100 units in stock). This option is suitable for applications requiring higher current margin or where design flexibility permits increased current ratings.
Frequently Asked Questions (FAQ)
Q: Can BAW56LT3G be used as a direct replacement for BAW56LT3?
A: Yes. The BAW56LT3G is electrically and mechanically equivalent to the BAW56LT3. Both parts feature identical diode configuration, reverse voltage rating, forward voltage characteristics, reverse recovery time, and leakage current specifications. The SOT-23-3 package geometry and pin assignments are identical, enabling direct substitution in existing PCB layouts.
Q: What is the primary difference between BAW56LT3G and BAW56-E3-08?
A: The BAW56-E3-08 is rated for 250 mA average rectified current per diode, compared to 200 mA for both the BAW56LT3 and BAW56LT3G. All other electrical parameters remain equivalent. The BAW56-E3-08 is manufactured by Vishay, while the BAW56LT3G is manufactured by onsemi. Both are ROHS3 compliant and actively produced.
Q: Are there packaging differences between these parts?
A: The BAW56LT3 is supplied in bulk packaging. Both substitute parts (BAW56LT3G and BAW56-E3-08) are supplied in Tape & Reel format, which is standard for automated assembly processes. The physical package dimensions and pin configuration (SOT-23-3) are identical across all three parts.
Q: Does the BAW56LT3G meet RoHS compliance requirements?
A: Yes. The BAW56LT3G is ROHS3 compliant. The original BAW56LT3 is RoHS non-compliant. For applications requiring RoHS compliance, the BAW56LT3G or BAW56-E3-08 must be selected.
Q: Which substitute should be selected for new designs?
A: For new designs requiring direct electrical equivalence with the same manufacturer, select BAW56LT3G. For applications where higher current capability provides design margin, select BAW56-E3-08. Both parts are actively produced with robust inventory availability and meet current regulatory standards.
Q: Are the reverse recovery time specifications identical across all three parts?
A: Yes. All three parts (BAW56LT3, BAW56LT3G, and BAW56-E3-08) specify a reverse recovery time of 6 ns, ensuring equivalent switching performance in high-frequency applications.
Q: What is the operating temperature range for each part?
A: The BAW56LT3 and BAW56LT3G both specify -55°C to 150°C junction operating temperature. The BAW56-E3-08 specifies a maximum junction temperature of 150°C. All three parts are suitable for the same thermal operating range.
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