BAV70W/MIF Equivalent & Substitute Parts

Part Overview

The BAV70W/MIF is a general-purpose diode array manufactured by Nexperia USA Inc., configured as 1 pair common cathode with 100 V reverse voltage rating and 175 mA average rectified current per diode. The device is housed in a surface mount SC-70, SOT-323 package and is qualified to AEC-Q101 automotive standards.

The BAV70W/MIF carries an obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this diode array configuration.

Substiute Parts

BAV70W/MIF
Nexperia USA Inc.In Stock: 949BAV70W/MIF Datasheet
BAV70W/MIF
Current Part
BAV70W,115
Nexperia USA Inc.In Stock: 62880BAV70W,115 Datasheet
BAV70W,115
Direct
BAV70W,135
Nexperia USA Inc.In Stock: 10031BAV70W,135 Datasheet
BAV70W,135
Parametric Equivalent
SBAV70WT1G
onsemiIn Stock: 20335SBAV70WT1G Datasheet
SBAV70WT1G
Similar

Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 175 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V
Operating Temperature - Junction (Max) 150°C
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BAV70W/MIF is determined by electrical and mechanical parameter compatibility within the diode array category. The critical parameters governing substitution are:

Electrical Parameters:

  • Diode configuration (1 pair common cathode)
  • DC reverse voltage rating (100 V minimum)
  • Average rectified current per diode (175 mA minimum)
  • Forward voltage characteristics
  • Reverse recovery time
  • Reverse leakage current

Mechanical Parameters:

  • Package type (SC-70, SOT-323)
  • Surface mount mounting type
  • Supplier device package designation

Compliance Parameters:

  • RoHS3 compliance
  • Automotive grade qualification (AEC-Q101)

Substitute parts are grouped into two categories: direct manufacturer equivalents from Nexperia USA Inc. with identical electrical specifications, and similar parts from alternative manufacturers (onsemi) that meet or exceed the electrical requirements while maintaining package and compliance compatibility.

Parameter Comparison

Parameter BAV70W/MIF BAV70W,115 BAV70W,135 SBAV70WT1G
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. onsemi
Product Status Obsolete Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 175 mA (DC) 175 mA (DC) 175 mA (DC) 200 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 6 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 500 nA @ 80 V 1 µA @ 100 V
Operating Temperature - Junction (Max) 150°C 150°C 150°C 150°C
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Grade Automotive Not specified Not specified Automotive
Qualification AEC-Q101 Not specified Not specified AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Packaging Not specified Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

Engineering Selection Recommendations

BAV70W,115 (Nexperia USA Inc.)

The BAV70W,115 is a direct electrical equivalent to the BAV70W/MIF with identical specifications across all critical parameters: 100 V reverse voltage, 175 mA average rectified current, 1.25 V forward voltage, 4 ns reverse recovery time, and 500 nA reverse leakage current. The part carries active product status and is available in Tape & Reel packaging. This part is suitable for direct substitution in applications where the BAV70W/MIF is specified, provided that automotive qualification and AEC-Q101 compliance are not mandatory design requirements.

BAV70W,135 (Nexperia USA Inc.)

The BAV70W,135 is a parametric equivalent to the BAV70W/MIF with identical electrical specifications and active product status. This part maintains the same 100 V reverse voltage, 175 mA average rectified current, forward voltage, and reverse recovery time characteristics. The BAV70W,135 is available in Tape & Reel packaging and is suitable for direct substitution in applications where the BAV70W/MIF is specified, provided that automotive qualification and AEC-Q101 compliance are not mandatory design requirements.

SBAV70WT1G (onsemi)

The SBAV70WT1G is a similar part from onsemi that meets or exceeds the electrical requirements of the BAV70W/MIF. The device maintains the same 100 V reverse voltage rating and forward voltage characteristics, with a higher average rectified current rating of 200 mA per diode (compared to 175 mA). The reverse recovery time is 6 ns (compared to 4 ns), and reverse leakage current is 1 µA at 100 V (compared to 500 nA at 80 V). The SBAV70WT1G carries active product status, automotive grade qualification, and AEC-Q101 certification, matching the compliance profile of the BAV70W/MIF. This part is suitable for substitution in automotive applications requiring AEC-Q101 qualification and is available in Tape & Reel packaging.

Frequently Asked Questions (FAQ)

Q: Can BAV70W,115 be used as a direct replacement for BAV70W/MIF?

A: Yes. The BAV70W,115 is electrically identical to the BAV70W/MIF across all specified parameters, including reverse voltage, average rectified current, forward voltage, reverse recovery time, and reverse leakage current. Both parts use the same SC-70, SOT-323 package and surface mount configuration. The primary difference is product status: BAV70W,115 is active while BAV70W/MIF is obsolete. Substitution is valid for applications where automotive qualification is not a design requirement.

Q: What is the difference between BAV70W,115 and BAV70W,135?

A: Both parts are electrically identical to the BAV70W/MIF with the same 100 V reverse voltage, 175 mA average rectified current, 1.25 V forward voltage, 4 ns reverse recovery time, and 500 nA reverse leakage current. The difference lies in packaging designation and inventory availability. Both are suitable for direct substitution.

Q: Can SBAV70WT1G replace BAV70W/MIF in automotive applications?

A: Yes. The SBAV70WT1G meets or exceeds the electrical requirements of the BAV70W/MIF and carries automotive grade qualification with AEC-Q101 certification, matching the compliance profile of the original part. The SBAV70WT1G has a higher average rectified current rating (200 mA versus 175 mA), making it suitable for applications with higher current demands. The reverse recovery time is 6 ns compared to 4 ns, and reverse leakage current is specified at 1 µA at 100 V. These differences do not preclude substitution in automotive designs.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (BAV70W,115, BAV70W,135, and SBAV70WT1G) are ROHS3 compliant, matching the compliance status of the BAV70W/MIF.

Q: What is the package compatibility between BAV70W/MIF and substitute parts?

A: All substitute parts use the SC-70, SOT-323 package with surface mount configuration, ensuring mechanical and footprint compatibility with the BAV70W/MIF. No PCB layout modifications are required for substitution.

Q: Which substitute part is recommended for new automotive designs?

A: The SBAV70WT1G from onsemi is recommended for new automotive designs requiring AEC-Q101 qualification. This part carries active product status, automotive grade designation, and AEC-Q101 certification. The higher average rectified current rating (200 mA) provides additional design margin for current-limited applications.

Q: What is the difference in reverse leakage current between BAV70W/MIF and SBAV70WT1G?

A: The BAV70W/MIF specifies 500 nA reverse leakage current at 80 V, while the SBAV70WT1G specifies 1 µA at 100 V. The SBAV70WT1G measurement is taken at a higher voltage (100 V versus 80 V), which typically results in higher leakage current values. This difference does not preclude substitution in standard applications.

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