BAS70-7 Equivalent & Substitute Parts

Part Overview

The BAS70-7 is a Schottky rectifier diode manufactured by Diodes Incorporated, rated for 70 V DC reverse voltage and 70 mA average rectified current in a surface mount SOT-23-3 package. This component is classified as discontinued at DiGi Electronics, which necessitates identification of equivalent and substitute parts for ongoing design requirements and production continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with comparable performance characteristics within the same application category.

Key Parameters

Parameter	Value	Unit
Technology	Schottky	—
Voltage - DC Reverse (Vr) (Max)	70	V
Current - Average Rectified (Io)	70	mA
Voltage - Forward (Vf) (Max) @ If	1 V @ 15 mA	—
Reverse Recovery Time (trr)	5	ns
Current - Reverse Leakage @ Vr	100 nA @ 50 V	—
Capacitance @ Vr, F	2 pF @ 0 V, 1 MHz	—
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Operating Temperature - Junction	-55 to 125	°C
RoHS Status	RoHS non-compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BAS70-7 is determined by strict equivalence across the following critical parameters: Schottky diode technology, 70 V maximum reverse voltage rating, 70 mA average rectified current, 1 V maximum forward voltage at 15 mA, SOT-23-3 surface mount package, and operating temperature range of -55°C to 125°C. Parts are grouped into the following categories:

Parametric Equivalents (Identical Electrical Specifications): Parts that match all primary electrical parameters and package specifications. These include BAS70-7-F, BAS70Q-7-F, BAS70 RFG, BAS70-TP, and BAS70E6327HTSA1. These parts are direct functional replacements with no performance degradation.

Manufacturer Recommended Equivalents: Parts recommended by original manufacturers as functional alternatives, including BAS70LT1G and NSVBAS70LT1G from onsemi. These maintain core electrical specifications with extended maximum junction temperature ratings (150°C vs. 125°C).

Upgrade Alternatives: Parts that maintain the same voltage and current ratings but originate from alternative manufacturers (Nexperia USA Inc., NXP USA Inc.). These include BAS70,215 and BAS70,235, which feature higher maximum reverse leakage current specifications (10 µA @ 70 V vs. 100 nA @ 50 V) and extended junction temperature ratings.

Cross-Technology Alternative: The MMBD701LT1G from onsemi represents a functional alternative with identical voltage rating and package but differs in current handling (200 mW power dissipation vs. 70 mA specification) and capacitance characteristics (1 pF @ 20 V vs. 2 pF @ 0 V).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [mA]	Vf (Max) @ If [V]	trr [ns]	Ir @ Vr [nA/µA]	C @ Vr [pF]	Tj (Max) [°C]	Product Status	RoHS Status
BAS70-7	Diodes Incorporated	70	70	1 @ 15 mA	5	100 nA @ 50 V	2 @ 0 V	125	Discontinued	Non-compliant
BAS70-7-F	Diodes Incorporated	70	70	1 @ 15 mA	5	100 nA @ 50 V	2 @ 0 V	125	Active	ROHS3 Compliant
BAS70Q-7-F	Diodes Incorporated	70	70	1 @ 15 mA	—	100 nA @ 50 V	2 @ 0 V	125	Active	ROHS3 Compliant
BAS70LT1G	onsemi	70	70	1 @ 15 mA	—	10 µA @ 70 V	2 @ 0 V	150	Active	ROHS3 Compliant
NSVBAS70LT1G	onsemi	70	70	1 @ 15 mA	—	10 µA @ 70 V	2 @ 0 V	150	Active	ROHS3 Compliant
BAS70 RFG	Taiwan Semiconductor Corporation	70	70	1 @ 15 mA	5	100 nA @ 50 V	2 @ 0 V	125	Active	ROHS3 Compliant
BAS70-TP	Micro Commercial Co	70	70	1 @ 15 mA	5	200 nA @ 50 V	2 @ 0 V	125	Active	ROHS3 Compliant
BAS70E6327HTSA1	Infineon Technologies	70	70	1 @ 15 mA	0.1	100 nA @ 50 V	2 @ 0 V	125	Active	ROHS3 Compliant
BAS70,215	Nexperia USA Inc.	70	70	1 @ 15 mA	—	10 µA @ 70 V	2 @ 0 V	150	Active	ROHS3 Compliant
BAS70,235	NXP USA Inc.	70	70	1 @ 15 mA	—	10 µA @ 70 V	2 @ 0 V	150	Active	ROHS3 Compliant
MMBD701LT1G	onsemi	70	—	—	—	—	1 @ 20 V	125	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement with Active Product Status: BAS70-7-F and BAS70Q-7-F from Diodes Incorporated provide identical electrical specifications to the discontinued BAS70-7 while maintaining active product status and ROHS3 compliance. BAS70-7-F is available in Cut Tape and Digi-Reel packaging, while BAS70Q-7-F includes automotive-grade qualification (AEC-Q101) and Tape & Reel packaging.

For Extended Temperature Operation: BAS70LT1G and NSVBAS70LT1G from onsemi extend the maximum junction temperature to 150°C while maintaining all core electrical specifications. These parts are suitable for applications requiring higher thermal headroom. NSVBAS70LT1G offers higher inventory availability (41,100 pcs vs. 8,267 pcs).

For Nexperia/NXP Ecosystem Integration: BAS70,215 (Nexperia USA Inc.) and BAS70,235 (NXP USA Inc.) provide equivalent functionality with extended junction temperature ratings and higher reverse leakage current specifications. BAS70,235 offers significantly higher inventory (269,830 pcs) in bulk packaging.

For Parametric Equivalence with Alternative Manufacturers: BAS70 RFG (Taiwan Semiconductor Corporation) and BAS70-TP (Micro Commercial Co) maintain identical electrical specifications to the original BAS70-7, including 5 ns reverse recovery time and 100 nA reverse leakage current. BAS70-TP exhibits slightly higher reverse leakage (200 nA @ 50 V).

For Infineon Technology Integration: BAS70E6327HTSA1 provides parametric equivalence with significantly faster reverse recovery time (100 ps vs. 5 ns), suitable for high-frequency switching applications requiring reduced switching losses.

For Cross-Technology Applications: MMBD701LT1G from onsemi represents a functional alternative with identical 70 V voltage rating and SOT-23-3 package but operates at higher power dissipation (200 mW) with lower capacitance (1 pF @ 20 V). This part is suitable for RF applications where lower capacitance is beneficial.

Frequently Asked Questions (FAQ)

Q: Can BAS70-7-F be used as a direct replacement for BAS70-7?

A: Yes. BAS70-7-F maintains identical electrical specifications across all critical parameters: 70 V reverse voltage, 70 mA average rectified current, 1 V forward voltage at 15 mA, 5 ns reverse recovery time, and SOT-23-3 package. The primary difference is product status (active vs. discontinued) and RoHS compliance (ROHS3 vs. non-compliant). Packaging is available in Cut Tape and Digi-Reel formats.

Q: What is the difference between BAS70-7-F and BAS70Q-7-F?

A: Both parts are manufactured by Diodes Incorporated with identical electrical specifications. BAS70Q-7-F includes automotive-grade qualification (AEC-Q101) and is supplied in Tape & Reel packaging, making it suitable for automotive applications. BAS70-7-F is available in Cut Tape and Digi-Reel packaging for general industrial use.

Q: Why do some substitute parts have higher reverse leakage current (10 µA vs. 100 nA)?

A: Higher reverse leakage current is a characteristic difference between manufacturer implementations. Parts such as BAS70LT1G, BAS70,215, and BAS70,235 specify 10 µA @ 70 V reverse leakage, compared to 100 nA @ 50 V in the original BAS70-7. This difference does not affect functional compatibility in most applications but should be evaluated for low-power or high-impedance circuit designs.

Q: Can BAS70LT1G be used in place of BAS70-7?

A: Yes. BAS70LT1G from onsemi provides functional equivalence with identical voltage and current ratings, forward voltage characteristics, and SOT-23-3 package. The extended maximum junction temperature (150°C vs. 125°C) provides additional thermal margin. Reverse leakage current is higher (10 µA @ 70 V vs. 100 nA @ 50 V), which is acceptable for most rectification applications.

Q: What is the significance of the reverse recovery time difference between BAS70E6327HTSA1 (100 ps) and BAS70-7 (5 ns)?

A: Reverse recovery time (trr) determines the speed at which the diode transitions from forward conduction to reverse blocking. BAS70E6327HTSA1 exhibits significantly faster recovery (100 ps vs. 5 ns), reducing switching losses and enabling operation at higher switching frequencies. This makes BAS70E6327HTSA1 preferable for high-frequency switching applications, while the original BAS70-7 specification is adequate for standard rectification circuits.

Q: Is MMBD701LT1G a suitable substitute for BAS70-7?

A: MMBD701LT1G shares the 70 V voltage rating and SOT-23-3 package but differs in application focus and electrical characteristics. MMBD701LT1G is specified as an RF Schottky diode with 200 mW power dissipation and lower capacitance (1 pF @ 20 V vs. 2 pF @ 0 V). It is suitable for RF and high-frequency applications but is not a direct replacement for standard rectification circuits requiring 70 mA average rectified current specification.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Cut Tape (CT) & Digi-Reel (BAS70-7-F), Tape & Reel (TR) (BAS70Q-7-F, BAS70LT1G, NSVBAS70LT1G, BAS70 RFG, BAS70-TP, BAS70E6327HTSA1, BAS70,215), and Bulk (BAS70,235). Selection depends on production volume and assembly process requirements.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed are ROHS3 compliant. The original BAS70-7 is RoHS non-compliant. For applications requiring RoHS compliance, any of the listed substitute parts provide compliant alternatives.

Q: Which substitute part offers the highest inventory availability?

A: BAS70,235 from NXP USA Inc. offers the highest inventory availability at 269,830 pcs in bulk packaging. For tape and reel formats, NSVBAS70LT1G from onsemi provides 41,100 pcs.

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