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BAS16LT1 Equivalent & Substitute Parts
Part Overview
The BAS16LT1 is a small-signal switching diode manufactured by onsemi, rated for 75 V DC reverse voltage and 200 mA average rectified current in a surface mount SOT-23-3 (TO-236) package. This part is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design requirements and production continuity. The BAS16LT1 serves general-purpose switching and signal detection applications where compact form factor and low forward voltage drop are required.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 75 | V |
| Current - Average Rectified (Io) | 200 | mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25 @ 150 mA | V |
| Reverse Recovery Time (trr) | 6 | ns |
| Current - Reverse Leakage @ Vr | 1 @ 75 V | µA |
| Capacitance @ Vr, F | 2 @ 0V, 1MHz | pF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| Mounting Type | Surface Mount | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the BAS16LT1 is determined by compatibility across the following critical parameters:
Mandatory Compatibility Criteria:
- Package / Case: TO-236-3, SC-59, SOT-23-3 (surface mount, identical pinout)
- Mounting Type: Surface Mount
- Current - Average Rectified (Io): 200 mA or greater
- Voltage - DC Reverse (Vr) (Max): 75 V or greater
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA or lower
- Reverse Recovery Time (trr): 6 ns or lower
- Current - Reverse Leakage @ Vr: 1 µA @ rated voltage or lower
Substitute parts are classified into two categories:
Direct Substitutes: Parts that meet or exceed all mandatory compatibility criteria with identical or superior electrical performance and active product status.
Similar Substitutes: Parts that meet core compatibility criteria but may have minor parameter variations (such as different voltage ratings or current ratings) that require circuit-level verification for specific applications.
Parameter Comparison
| Parameter | BAS16LT1 (Main) | BAS16LT1G | BAS16LT3G | BAS16-E3-08 | BAS16E6327HTSA1 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | Vishay General Semiconductor - Diodes Division | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 75 V | 100 V | 100 V | 75 V | 80 V |
| Current - Average Rectified (Io) | 200 mA | 200 mA | 200 mA | 150 mA | 250 mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA | 1.25 V @ 150 mA | 1.25 V @ 150 mA | 1.25 V @ 150 mA | 1.25 V @ 150 mA |
| Reverse Recovery Time (trr) | 6 ns | 6 ns | 6 ns | 6 ns | 4 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V | 1 µA @ 100 V | 1 µA @ 100 V | 1 µA @ 75 V | 1 µA @ 75 V |
| Capacitance @ Vr, F | 2 pF @ 0V, 1MHz | 2 pF @ 0V, 1MHz | 2 pF @ 0V, 1MHz | 4 pF @ 0V, 1MHz | 2 pF @ 0V, 1MHz |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Product Status | Obsolete | Active | Active | Active | Last Time Buy |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Direct Substitutes (Preferred):
BAS16LT1G and BAS16LT3G are direct substitutes for the obsolete BAS16LT1. Both parts are manufactured by onsemi, maintain identical electrical performance characteristics, and are classified as active products. Both parts feature higher reverse voltage ratings (100 V versus 75 V), providing enhanced voltage margin. Both are ROHS3 compliant, addressing regulatory requirements that the original BAS16LT1 does not meet. BAS16LT1G offers higher inventory availability (665,100 pieces) compared to BAS16LT3G (18,150 pieces).
Similar Substitutes (Application-Dependent):
BAS16-E3-08 (Vishay General Semiconductor - Diodes Division) is a similar substitute with identical voltage rating (75 V) and forward voltage characteristics. However, the average rectified current rating is reduced to 150 mA, which is 25% lower than the BAS16LT1 specification. This part is suitable only for applications where the circuit current requirement does not exceed 150 mA. BAS16-E3-08 is ROHS3 compliant and active.
BAS16E6327HTSA1 (Infineon Technologies) is a similar substitute with 80 V reverse voltage rating and 250 mA current rating. This part features faster reverse recovery time (4 ns versus 6 ns), indicating fast recovery diode technology. The part is classified as Last Time Buy, indicating limited future availability. BAS16E6327HTSA1 is ROHS3 compliant.
Compliance Consideration:
All substitute parts are ROHS3 compliant, whereas the original BAS16LT1 is RoHS non-compliant. Selection of any substitute part addresses regulatory compliance requirements for new designs and production.
Frequently Asked Questions (FAQ)
Q: Can BAS16LT1G or BAS16LT3G be used as direct replacements for BAS16LT1?
A: Yes. Both BAS16LT1G and BAS16LT3G are direct substitutes. They share identical package (SOT-23-3), mounting type (surface mount), current rating (200 mA), forward voltage (1.25 V @ 150 mA), and reverse recovery time (6 ns). Both parts have higher reverse voltage ratings (100 V versus 75 V), which provides additional voltage margin without affecting circuit operation. Both are active products with ROHS3 compliance.
Q: What is the difference between BAS16LT1G and BAS16LT3G?
A: BAS16LT1G and BAS16LT3G are electrically identical. The primary difference is inventory availability: BAS16LT1G has 665,100 pieces in stock, while BAS16LT3G has 18,150 pieces. Both are manufactured by onsemi and are active products.
Q: Can BAS16-E3-08 replace BAS16LT1 in all applications?
A: BAS16-E3-08 is a similar substitute with the same voltage rating (75 V) and forward voltage characteristics. However, the average rectified current is rated at 150 mA, which is 25% lower than the BAS16LT1 (200 mA). BAS16-E3-08 is suitable only for applications where circuit current does not exceed 150 mA. For applications requiring the full 200 mA current capability, BAS16-E3-08 is not appropriate.
Q: What is the significance of the BAS16E6327HTSA1 Last Time Buy status?
A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this part and will no longer accept new orders after a specified date. Existing inventory may be available, but future procurement is not guaranteed. BAS16E6327HTSA1 should be considered only for applications where alternative substitutes are unsuitable, and only if current inventory can be secured.
Q: Are all substitute parts available in the same package?
A: Yes. All substitute parts (BAS16LT1G, BAS16LT3G, BAS16-E3-08, and BAS16E6327HTSA1) are available in TO-236-3 / SC-59 / SOT-23-3 surface mount package. Pin configuration is identical, enabling direct PCB footprint compatibility.
Q: What is the advantage of higher voltage ratings in BAS16LT1G and BAS16LT3G?
A: The 100 V reverse voltage rating in BAS16LT1G and BAS16LT3G provides 33% higher voltage margin compared to the 75 V rating of BAS16LT1. This increased margin reduces stress on the diode in circuits with voltage transients or overvoltage conditions, potentially improving reliability and component longevity without any negative impact on circuit performance.
Q: Are there RoHS compliance implications when substituting BAS16LT1?
A: Yes. The original BAS16LT1 is RoHS non-compliant. All substitute parts (BAS16LT1G, BAS16LT3G, BAS16-E3-08, and BAS16E6327HTSA1) are ROHS3 compliant. For new designs or production runs subject to RoHS regulations, substitution with any of these parts addresses compliance requirements.
Q: What is the difference between standard recovery and fast recovery diodes in this comparison?
A: BAS16LT1, BAS16LT1G, BAS16LT3G, and BAS16-E3-08 are classified as standard recovery diodes with reverse recovery time of 6 ns. BAS16E6327HTSA1 is classified as a fast recovery diode with reverse recovery time of 4 ns. Fast recovery diodes exhibit lower reverse recovery time, which reduces switching losses in high-frequency applications. For low-frequency switching applications, the difference is negligible.
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