BAP64-02,115 Equivalent & Substitute Parts

Part Overview

The BAP64-02,115 is an RF Diode PIN - Single manufactured by NXP USA Inc., rated for 175V peak reverse voltage and 715 mW power dissipation in an SOD-523 package. This component is Active status and ROHS3 compliant. Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for RF PIN diode applications, particularly when voltage or power dissipation requirements permit lower-rated alternatives or when packaging standardization is required.

Substiute Parts

BAP64-02,115
NXP USA Inc.In Stock: 3224BAP64-02,115 Datasheet
BAP64-02,115
Current Part
BAR5002VH6327XTSA1
Infineon TechnologiesIn Stock: 19308BAR5002VH6327XTSA1 Datasheet
BAR5002VH6327XTSA1
MFR Recommended
BAR6402VH6327XTSA1
Infineon TechnologiesIn Stock: 1989BAR6402VH6327XTSA1 Datasheet
BAR6402VH6327XTSA1
MFR Recommended

Key Parameters

Parameter Value
Diode Type PIN - Single
Voltage - Peak Reverse (Max) 175V
Current - Max 100 mA
Capacitance @ Vr, F 0.35pF @ 20V, 1MHz
Resistance @ If, F 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max) 715 mW
Operating Temperature -65°C ~ 150°C (TJ)
Package / Case SC-79, SOD-523
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution for the BAP64-02,115 is determined by the following criteria:

Electrical Compatibility Requirements:

  • Diode Type must be PIN - Single
  • Peak Reverse Voltage rating must be equal to or greater than the application requirement
  • Current rating must support 100 mA maximum
  • Capacitance and resistance characteristics must fall within acceptable ranges for RF switching applications
  • Power dissipation capability must meet circuit demands

Mechanical Compatibility:

  • Package / Case must be SC-79 or SOD-523 equivalent
  • Supplier Device Package must be compatible with existing PCB layouts

Compliance Requirements:

  • RoHS3 compliance required
  • REACH Unaffected status required

The identified substitutes meet these criteria with variations in voltage rating and power dissipation that remain within acceptable operational bounds for RF PIN diode applications.

Parameter Comparison

Parameter BAP64-02,115 (NXP) BAR6402VH6327XTSA1 (Infineon) BAR5002VH6327XTSA1 (Infineon)
Manufacturer NXP USA Inc. Infineon Technologies Infineon Technologies
Diode Type PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 175V 150V 50V
Current - Max 100 mA 100 mA 100 mA
Capacitance @ Vr, F 0.35pF @ 20V, 1MHz 0.35pF @ 20V, 1MHz 0.4pF @ 5V, 1MHz
Resistance @ If, F 1.35Ohm @ 100mA, 100MHz 1.35Ohm @ 100mA, 100MHz 4.5Ohm @ 10mA, 100MHz
Power Dissipation (Max) 715 mW 250 mW 250 mW
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Package / Case SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523
Packaging Type Cut Tape (CT) & Digi-Reel® Cut Tape (CT) & Digi-Reel® Tape & Reel (TR)
Product Status Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

BAR6402VH6327XTSA1 (Infineon Technologies): This substitute maintains the same capacitance and resistance characteristics as the BAP64-02,115 while operating at 150V peak reverse voltage. Power dissipation is reduced to 250 mW. This part is suitable for applications where the circuit voltage requirement does not exceed 150V and thermal management permits lower power dissipation ratings. All compliance certifications match the original part.

BAR5002VH6327XTSA1 (Infineon Technologies): This substitute is applicable only in circuits where peak reverse voltage does not exceed 50V. Resistance increases to 4.5Ohm at 10mA, and capacitance increases to 0.4pF at 5V. Power dissipation is 250 mW. This part is suitable for lower-voltage RF switching applications. All compliance certifications match the original part.

Selection between substitutes depends on the specific voltage and power requirements of the target application circuit.

Frequently Asked Questions (FAQ)

Q: Can BAR6402VH6327XTSA1 be used as a direct replacement for BAP64-02,115?

A: BAR6402VH6327XTSA1 is compatible when the application circuit operates at or below 150V peak reverse voltage. The capacitance and resistance parameters are identical. Power dissipation is lower at 250 mW versus 715 mW. Verify circuit voltage requirements before substitution.

Q: What is the voltage limitation for BAR5002VH6327XTSA1?

A: BAR5002VH6327XTSA1 is rated for 50V peak reverse voltage maximum. This part is suitable only for low-voltage RF switching applications. It is not suitable for circuits requiring higher voltage ratings.

Q: Are the package dimensions identical across all three parts?

A: All three parts use SC-79 or SOD-523 package designations. Verify supplier device package specifications (SOD-523 for NXP, PG-SC79-2 for Infineon) with PCB layout requirements to confirm mechanical compatibility.

Q: Do all substitute parts meet the same compliance requirements?

A: Yes. BAR6402VH6327XTSA1 and BAR5002VH6327XTSA1 are both ROHS3 compliant and REACH Unaffected, matching the BAP64-02,115 compliance status.

Q: What is the operating temperature range for the substitute parts?

A: Both Infineon substitutes are rated to 150°C (TJ) maximum. The BAP64-02,115 supports -65°C to 150°C. Verify minimum operating temperature requirements for your application.

Q: How do the resistance characteristics differ between parts?

A: BAP64-02,115 and BAR6402VH6327XTSA1 both measure 1.35Ohm @ 100mA, 100MHz. BAR5002VH6327XTSA1 measures 4.5Ohm @ 10mA, 100MHz, indicating higher series resistance suitable for lower-current applications.

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