BAP50-03-TP Equivalent & Substitute Parts

Part Overview

The BAP50-03-TP is an RF Diode PIN - Single manufactured by Micro Commercial Co, rated for 50V peak reverse voltage and 200 mW power dissipation in SOD-323 packaging. This component is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical ratings, mechanical form factor, and thermal operating range to ensure reliable circuit performance.

Substiute Parts

BAP50-03-TP

Micro Commercial CoIn Stock: 64732BAP50-03-TP Datasheet

Current PartRFQ

BA592E6327HTSA1

Infineon TechnologiesIn Stock: 999185BA592E6327HTSA1 Datasheet

SimilarRFQ

BA592E6433HTMA1

Infineon TechnologiesIn Stock: 839BA592E6433HTMA1 Datasheet

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BAP51-03,115

NXP USA Inc.In Stock: 10802BAP51-03,115 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the BAP50-03-TP is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Package / Case: SC-76, SOD-323 (mechanical and thermal interface)
• Voltage - Peak Reverse (Max): 50V minimum (electrical stress rating)
• Current - Max: 50 mA minimum (current handling capacity)
• Power Dissipation (Max): 200 mW minimum (thermal capability)
• Operating Temperature: -65°C ~ 150°C (thermal operating range)
• Diode Type: PIN - Single (functional classification)

Compliance Requirements:

• RoHS3 Compliant
• MSL 1 (Unlimited)

Substitute parts identified below meet all mandatory criteria and maintain full electrical and mechanical compatibility with the BAP50-03-TP.

Parameter Comparison

Engineering Selection Recommendations

BAP51-03,115 (NXP USA Inc.) - Recommended Primary Substitute

The BAP51-03,115 is the optimal substitute for BAP50-03-TP applications. This part maintains PIN diode classification, matches the 50V peak reverse voltage rating, and exceeds power dissipation capability at 500 mW versus 200 mW. Operating temperature range (-65°C ~ 150°C) is identical. The component is currently Active in product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and MSL 1 rating are maintained. Lower forward resistance (2.5Ohm @ 10mA, 100MHz) provides improved RF performance characteristics.

BA592E6327HTSA1 and BA592E6433HTMA1 (Infineon Technologies) - Secondary Alternatives

Both Infineon parts are functionally compatible but present design trade-offs. Peak reverse voltage is reduced to 35V, which is acceptable only in applications where circuit design margins permit operation below 50V. Both parts feature higher capacitance (1.1pF @ 3V, 1MHz) and significantly lower forward resistance (500mOhm @ 10mA, 100MHz), which may alter RF circuit behavior. Operating temperature specification is limited to 150°C maximum without lower bound definition. Both parts carry "Not For New Designs" status, indicating limited future availability. These alternatives are suitable only for legacy system maintenance where voltage derating is acceptable.

Frequently Asked Questions (FAQ)

Q: Can BA592E6327HTSA1 or BA592E6433HTMA1 be used as direct replacements for BAP50-03-TP?

A: These Infineon parts are mechanically compatible (SOD-323 package) but present electrical limitations. The 35V peak reverse voltage rating is 15V lower than BAP50-03-TP. Substitution is permissible only in circuits where the maximum applied reverse voltage does not exceed 35V. The higher capacitance and lower forward resistance will affect RF circuit performance and impedance matching characteristics.

Q: What is the primary advantage of BAP51-03,115 over other substitutes?

A: BAP51-03,115 maintains full electrical equivalence with BAP50-03-TP across all critical parameters: 50V peak reverse voltage, PIN diode type, identical operating temperature range, and superior power dissipation (500 mW). The component is Active in product status, ensuring procurement availability. Lower forward resistance improves RF performance in high-frequency applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. BAP51-03,115, BA592E6327HTSA1, and BA592E6433HTMA1 are all ROHS3 Compliant with MSL 1 (Unlimited) rating, matching the compliance profile of BAP50-03-TP.

Q: What is the difference between BA592E6327HTSA1 and BA592E6433HTMA1?

A: Both parts are electrically identical Infineon RF Diode Standard components with 35V peak reverse voltage. The primary difference is packaging: BA592E6327HTSA1 is supplied in Cut Tape (CT) & Digi-Reel® format, while BA592E6433HTMA1 is supplied in Tape & Reel (TR) format. Electrical specifications and performance characteristics are equivalent.

Q: Can BAP50-03-TP be used in new designs?

A: No. BAP50-03-TP is classified as Obsolete. For new designs, BAP51-03,115 is the recommended substitute, as it is Active in product status and provides long-term supply chain continuity.

Q: How do capacitance differences affect circuit design?

A: BAP50-03-TP and BAP51-03,115 both specify 0.35pF @ 5V, 1MHz, ensuring consistent RF impedance matching and tuning characteristics. Infineon alternatives (BA592E6327HTSA1 and BA592E6433HTMA1) specify 1.1pF @ 3V, 1MHz, which is approximately 3× higher. This increased capacitance will alter resonant frequency, bandwidth, and impedance matching in RF circuits and requires circuit re-optimization.