BA679S-GS18 Equivalent & Substitute Parts

Part Overview

The BA679S-GS18 is an RF PIN diode manufactured by Vishay General Semiconductor - Diodes Division, designed for RF applications requiring low capacitance and controlled resistance characteristics. This single PIN diode operates at a peak reverse voltage of 30V with a maximum current rating of 50 mA in a SOD-80 MiniMELF package. The part is active and in production with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the original BA679S-GS18 becomes unavailable, when higher voltage or power ratings are required for circuit redesign, or when alternative packaging formats better suit manufacturing processes.

Substiute Parts

BA679S-GS18
Vishay General Semiconductor - Diodes DivisionIn Stock: 803BA679S-GS18 Datasheet
BA679S-GS18
Current Part
MA4P1250-1072T
MACOM Technology SolutionsIn Stock: 305226MA4P1250-1072T Datasheet
MA4P1250-1072T
MFR Recommended
MA4P7001F-1072T
MACOM Technology SolutionsIn Stock: 21259MA4P7001F-1072T Datasheet
MA4P7001F-1072T
MFR Recommended
MA4P7002F-1072T
MACOM Technology SolutionsIn Stock: 6022MA4P7002F-1072T Datasheet
MA4P7002F-1072T
MFR Recommended
MA4P7006F-1072T
MACOM Technology SolutionsIn Stock: 1569MA4P7006F-1072T Datasheet
MA4P7006F-1072T
MFR Recommended
MA4P7101F-1072T
MACOM Technology SolutionsIn Stock: 19228MA4P7101F-1072T Datasheet
MA4P7101F-1072T
MFR Recommended
MA4P7102F-1072T
MACOM Technology SolutionsIn Stock: 17326MA4P7102F-1072T Datasheet
MA4P7102F-1072T
MFR Recommended
MA4P7104F-1072T
MACOM Technology SolutionsIn Stock: 4825MA4P7104F-1072T Datasheet
MA4P7104F-1072T
MFR Recommended

Key Parameters

Parameter BA679S-GS18
Diode Type PIN - Single
Voltage - Peak Reverse (Max) 30V
Current - Max 50 mA
Capacitance @ Vr, F 0.5pF @ 0V, 100MHz
Resistance @ If, F 50Ohm @ 1.5mA, 100MHz
Package / Case DO-213AC, MINI-MELF, SOD-80
Operating Temperature 125°C (TJ)
RoHS Status ROHS3 Compliant
Product Status Active

Substitute Part Grouping Explanation

Substitution of the BA679S-GS18 is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Diode Type: PIN - Single (all substitutes maintain this classification)
  • Package compatibility: MELF or 2-SMD packages are acceptable alternatives to SOD-80 MiniMELF
  • Voltage rating: Substitutes must equal or exceed the 30V requirement
  • Current handling: Substitutes must support the application's current demands
  • Resistance and capacitance characteristics: Must be suitable for RF frequency operation at 100MHz

Substitute Categories:

The provided substitute parts from MACOM Technology Solutions (MA4P series) are classified as higher-specification alternatives. These parts exceed the BA679S-GS18 in voltage rating (100V to 600V) and power dissipation capability (6W to 11.5W), making them suitable for applications requiring enhanced performance margins or higher voltage operation. All substitutes maintain PIN diode single-element configuration and RoHS3 compliance.

Parameter Comparison

Parameter BA679S-GS18 MA4P1250-1072T MA4P7001F-1072T MA4P7002F-1072T MA4P7006F-1072T MA4P7101F-1072T MA4P7102F-1072T MA4P7104F-1072T
Diode Type PIN - Single PIN - Single PIN - Single PIN - Single PIN - Single PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 30V 100V 100V 200V 600V 200V 200V 400V
Resistance @ If, F 50Ohm @ 1.5mA, 100MHz 750mOhm @ 50mA, 100MHz 900mOhm @ 100mA, 100MHz 900mOhm @ 100mA, 100MHz 900mOhm @ 100mA, 100MHz 500mOhm @ 100mA, 100MHz 500mOhm @ 100mA, 100MHz 500mOhm @ 100mA, 100MHz
Package / Case DO-213AC, MINI-MELF, SOD-80 2-SMD, MELF 2-SMD 2-SMD 2-SMD 2-SMD, No Lead, ODS-1072 2-SMD 2-SMD
Power Dissipation (Max) Not specified 6 W 10 W 10 W 10 W 11.5 W 11.5 W 11.5 W
Operating Temperature 125°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

All substitute parts listed maintain active product status and RoHS3 compliance, meeting regulatory requirements equivalent to the BA679S-GS18. Selection among substitutes depends on application-specific voltage and power requirements:

MA4P1250-1072T provides the lowest voltage rating (100V) among substitutes with 6W power dissipation, suitable for applications requiring modest performance enhancement over the original 30V specification.

MA4P7001F-1072T, MA4P7002F-1072T, and MA4P7006F-1072T offer 10W power dissipation with voltage ratings of 100V, 200V, and 600V respectively, accommodating higher-voltage circuit designs while maintaining 900mOhm resistance at 100mA.

MA4P7101F-1072T, MA4P7102F-1072T, and MA4P7104F-1072T deliver the highest power dissipation (11.5W) with improved resistance characteristics (500mOhm @ 100mA) across 200V, 200V, and 400V ratings respectively. MA4P7101F-1072T includes ODS-1072 ceramic packaging specification.

All substitutes operate across an extended temperature range (-55°C to 175°C) compared to the BA679S-GS18 (125°C maximum), providing thermal margin for demanding applications.

Frequently Asked Questions (FAQ)

Q: Can MA4P series diodes directly replace BA679S-GS18 in existing PCB layouts?

A: Package compatibility requires evaluation. The BA679S-GS18 uses SOD-80 MiniMELF (DO-213AC) packaging, while MA4P substitutes use 2-SMD or MELF packages. Physical footprint differences may require PCB redesign. Electrical substitution is valid when voltage and current ratings are met.

Q: What is the primary difference between MA4P7001F-1072T, MA4P7002F-1072T, and MA4P7006F-1072T?

A: These three parts are electrically identical except for voltage rating. MA4P7001F-1072T is rated 100V, MA4P7002F-1072T is rated 200V, and MA4P7006F-1072T is rated 600V. All three provide 10W power dissipation and 900mOhm resistance at 100mA, 100MHz. Selection depends on the maximum reverse voltage present in the circuit.

Q: Why do MA4P7101F-1072T and MA4P7102F-1072T both have 200V ratings but different specifications?

A: Both parts share 200V voltage rating and 11.5W power dissipation. MA4P7101F-1072T specifies ODS-1072 ceramic packaging with 1pF capacitance at 100V, 1MHz. MA4P7102F-1072T uses standard 2-SMD packaging without capacitance specification. Selection depends on packaging requirements and whether capacitance data is critical for the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed MA4P series substitutes maintain ROHS3 compliance and MSL 1 (unlimited moisture sensitivity level), matching the environmental and regulatory status of the BA679S-GS18.

Q: What is the significance of the extended operating temperature range in MA4P substitutes?

A: MA4P series parts operate from -55°C to 175°C, compared to BA679S-GS18 at 125°C maximum. This extended range provides thermal design margin and enables use in applications with wider ambient or junction temperature requirements.

Q: How does resistance at forward current affect RF diode selection?

A: Forward resistance determines insertion loss and power handling in RF circuits. The BA679S-GS18 specifies 50Ohm at 1.5mA, while MA4P substitutes range from 500mOhm to 900mOhm at higher current levels (50mA to 100mA). Higher resistance values may affect circuit performance in low-loss applications; circuit simulation is necessary to confirm suitability.

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