BA592E6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BA592E6327HTSA1 is an RF standard diode manufactured by Infineon Technologies, rated for 35V peak reverse voltage with a maximum current of 100 mA. The device is packaged in SC-76/SOD-323 form factor and is compliant with RoHS3 and REACH regulations. This part carries a "Not For New Designs" product status, indicating it has been superseded in Infineon's product line. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and legacy system support where this diode type is specified.

Substiute Parts

BA592E6327HTSA1

Infineon TechnologiesIn Stock: 999185BA592E6327HTSA1 Datasheet

Current PartRFQ

BAP50-03-TP

Micro Commercial CoIn Stock: 64732BAP50-03-TP Datasheet

MFR RecommendedRFQ

BAP51-03,115

NXP USA Inc.In Stock: 10802BAP51-03,115 Datasheet

MFR RecommendedRFQ

RN731VTE-17

Rohm SemiconductorIn Stock: 282409RN731VTE-17 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BA592E6327HTSA1 is determined by the following critical parameters:

Package Compatibility: All substitute parts must use SC-76 or SOD-323 packaging to ensure mechanical and electrical fit in existing PCB layouts.

Voltage Rating: The BA592E6327HTSA1 operates at 35V peak reverse voltage. Substitute parts with equal or higher voltage ratings (50V) are electrically compatible and provide margin for circuit reliability.

Diode Classification: The main part is a Standard diode type. PIN diodes listed as substitutes operate on different physical principles (carrier injection) and are functionally equivalent for RF switching and attenuation applications, though with different electrical characteristics.

Current and Capacitance: The 100 mA maximum current and 1.1 pF capacitance define the switching speed and power handling capability. Substitute parts with lower current ratings (50 mA) require circuit validation but remain compatible for applications not demanding the full 100 mA specification.

Compliance Requirements: All parts must maintain RoHS3 compliance and MSL Level 1 rating to meet procurement and environmental standards.

Parameter Comparison

Engineering Selection Recommendations

BAP51-03,115 (NXP USA Inc.) is the primary substitute for new applications and ongoing production. This part maintains Active product status, ensuring long-term availability and manufacturer support. It provides 50V voltage rating with improved power dissipation (500 mW) and lower forward resistance (2.5 Ohm), making it suitable for RF switching and attenuation circuits. The extended operating temperature range (-65°C to 150°C) accommodates broader environmental conditions.

RN731VTE-17 (Rohm Semiconductor) is an alternative substitute with Active product status. This PIN diode offers 50V rating and operates within the specified temperature range. The UMD2 package variant (SOD-323F) provides mechanical compatibility with standard SOD-323 footprints. Lower power dissipation (100 mW) suits applications with reduced thermal budgets.

BAP50-03-TP (Micro Commercial Co) carries Obsolete product status and should be avoided for new designs or long-term production commitments. While electrically compatible, obsolescence limits future availability and manufacturer support.

Frequently Asked Questions (FAQ)

Q: Can BAP51-03,115 directly replace BA592E6327HTSA1 in existing circuits?

A: Yes, for most RF applications. Both parts share SC-76/SOD-323 packaging and operate within compatible voltage and current ranges. The BAP51-03,115 provides higher voltage rating (50V vs. 35V) and improved power handling (500 mW), making it suitable for direct substitution. Circuit validation is recommended for applications operating at the maximum current specification (100 mA on the original part versus 50 mA on the substitute).

Q: What is the functional difference between Standard and PIN diode types?

A: Standard diodes (BA592E6327HTSA1) rely on the p-n junction depletion region for operation. PIN diodes (BAP50-03-TP, BAP51-03,115, RN731VTE-17) include an intrinsic (I) region between p and n layers, enabling superior RF switching characteristics and lower capacitance. Both types are functionally equivalent for RF attenuation and switching applications, though PIN diodes offer better performance in high-frequency circuits.

Q: Why do substitute parts have lower maximum current ratings (50 mA vs. 100 mA)?

A: PIN diodes are optimized for RF switching and attenuation rather than high-current rectification. The 50 mA rating reflects the typical operating point for RF applications. If the original circuit requires the full 100 mA specification, circuit redesign or alternative component selection may be necessary.

Q: Are all substitute parts available in the same package?

A: Yes, all substitute parts use SC-76 or SOD-323 packaging, ensuring PCB footprint compatibility. RN731VTE-17 uses the SOD-323F variant, which is mechanically and electrically compatible with standard SOD-323 layouts.

Q: Which substitute part should be selected for new designs?

A: BAP51-03,115 is recommended for new designs due to its Active product status, ensuring manufacturer support and long-term availability. RN731VTE-17 is an acceptable alternative with equivalent performance characteristics.