BA159GHB0G Equivalent & Substitute Parts

Part Overview

The BA159GHB0G is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This device features fast recovery characteristics with a reverse recovery time of 250 ns and is qualified to AEC-Q101 automotive standards. The BA159GHB0G is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility for existing designs.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A	V
Reverse Recovery Time (trr)	250	ns
Current - Reverse Leakage @ Vr	5	µA @ 1000 V
Capacitance @ Vr, F	15	pF @ 4V, 1MHz
Mounting Type	Through Hole	-
Package / Case	DO-204AL, DO-41, Axial	-
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	-
Qualification	AEC-Q101	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BA159GHB0G is determined by the following critical parameters:

Electrical Requirements:

Voltage - DC Reverse (Vr) (Max): 1000 V minimum
Current - Average Rectified (Io): 1 A minimum
Voltage - Forward (Vf) (Max) @ If: 1.2 V or lower at 1 A
Current - Reverse Leakage @ Vr: 5 µA or lower at 1000 V

Mechanical Requirements:

Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial compatible
Operating Temperature - Junction: -55°C to 150°C minimum range

Compliance Requirements:

RoHS Status: ROHS3 Compliant
Grade: Automotive preferred
Qualification: AEC-Q101 preferred

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical and mechanical specifications) and Functional Equivalents (meet or exceed all critical electrical parameters within the specified package and temperature range).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Status	AEC-Q101
BA159GHB0G	Taiwan Semiconductor Corporation	1000	1	1.2	250	5	DO-204AL (DO-41)	-55 to 150	Discontinued	Yes
BA159GHA0G	Taiwan Semiconductor Corporation	1000	1	1.2	250	5	DO-204AL (DO-41)	-55 to 150	Active	Yes
1N4007-G	Comchip Technology	1000	1	1.1	-	5	DO-41	-55 to 150	Active	No
1N4007-T	Diodes Incorporated	1000	1	1.0	-	5	DO-41	-65 to 150	Last Time Buy	No
1N4007FFG	onsemi	1000	1	1.1	-	10	Axial	-65 to 175	Not For New Designs	No
1N4007G	Taiwan Semiconductor Corporation	1000	1	1.0	-	5	DO-204AL (DO-41)	-55 to 150	Active	No
1N4007GP-TP	Micro Commercial Co	1000	1	1.1	2000	5	DO-41	-55 to 150	Active	No
1N4007RLG	onsemi	1000	1	1.1	-	10	Axial	-65 to 175	Not For New Designs	No
1N4249GP-E3/54	Vishay General Semiconductor - Diodes Division	1000	1	1.2	-	1	DO-204AL (DO-41)	-65 to 160	Active	No
A1N4007G-G	Comchip Technology	1000	1	1.1	-	5	DO-41	-55 to 125	Active	Yes

Engineering Selection Recommendations

Primary Recommendation: BA159GHA0G

The BA159GHA0G is the direct equivalent to the BA159GHB0G. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications, fast recovery characteristics (250 ns), and AEC-Q101 automotive qualification. The BA159GHA0G is currently in active production status with 908 pieces in stock, providing immediate availability. This part maintains full compatibility with existing designs without any electrical or mechanical modifications.

Secondary Recommendation: 1N4007G

The 1N4007G from Taiwan Semiconductor Corporation meets all critical electrical parameters with equivalent voltage and current ratings. This part is in active production status with high inventory availability (171,387 pieces). The 1N4007G operates within the required temperature range (-55°C to 150°C) and is packaged in DO-204AL (DO-41) format. However, this part does not carry AEC-Q101 automotive qualification and exhibits standard recovery characteristics rather than fast recovery.

Alternative Consideration: 1N4249GP-E3/54

The 1N4249GP-E3/54 from Vishay General Semiconductor meets the electrical requirements with superior reverse leakage characteristics (1 µA versus 5 µA). This part is in active production status and packaged in DO-204AL (DO-41) format. The extended temperature range (-65°C to 160°C) provides additional thermal margin. However, this part does not carry AEC-Q101 automotive qualification.

Not Recommended for New Designs:

Parts with "Not For New Designs" or "Last Time Buy" status (1N4007FFG, 1N4007RLG, 1N4007-T) should not be selected for new applications due to limited future availability and manufacturer discontinuation plans.

Frequently Asked Questions (FAQ)

Q: Can the BA159GHA0G directly replace the BA159GHB0G?

A: Yes. The BA159GHA0G is the direct equivalent with identical electrical specifications, reverse recovery time (250 ns), and AEC-Q101 automotive qualification. Both parts are manufactured by Taiwan Semiconductor Corporation and packaged in DO-204AL (DO-41) format. No circuit modifications are required.

Q: What is the difference between fast recovery and standard recovery diodes?

A: The BA159GHB0G features fast recovery with a reverse recovery time of 250 ns. Standard recovery diodes such as the 1N4007G have recovery times exceeding 500 ns. Fast recovery diodes reduce switching losses in high-frequency applications. If the application operates at low frequencies or does not require fast switching characteristics, standard recovery alternatives are acceptable.

Q: Why is AEC-Q101 qualification important?

A: AEC-Q101 qualification indicates the diode meets automotive industry reliability and quality standards. The BA159GHB0G and BA159GHA0G both carry this qualification. If the application is automotive or requires equivalent reliability assurance, select parts with AEC-Q101 qualification (BA159GHA0G or A1N4007G-G).

Q: Are axial package diodes compatible with DO-41 footprints?

A: Axial package diodes (1N4007FFG, 1N4007RLG) have the same lead spacing and through-hole mounting as DO-41 packages. However, verify PCB footprint compatibility before substitution. DO-204AL (DO-41) and axial packages are mechanically interchangeable in most applications.

Q: What is the significance of reverse leakage current specifications?

A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse-biased. The BA159GHB0G specifies 5 µA at 1000 V. Lower leakage currents (such as 1 µA in the 1N4249GP-E3/54) indicate superior blocking characteristics and reduced power dissipation in standby conditions. Higher leakage currents (10 µA in onsemi parts) are acceptable for most applications but may increase power consumption.

Q: Can I use a 1N4007 series diode instead of the BA159?

A: The 1N4007 series meets the voltage and current requirements and is mechanically compatible. However, the 1N4007 series uses standard recovery technology (>500 ns) compared to the BA159's fast recovery (250 ns). Select 1N4007 alternatives only if the application does not require fast switching performance or if cost optimization is prioritized over recovery speed.

Q: What is the operating temperature range consideration?

A: The BA159GHB0G operates from -55°C to 150°C junction temperature. Most substitute parts maintain this range or extend it. The 1N4007-T and onsemi parts extend to -65°C and 175°C respectively, providing additional thermal margin. Verify that the selected substitute meets the minimum and maximum temperature requirements of the target application.

Q: Is RoHS3 compliance mandatory for substitution?

A: All listed substitute parts are RoHS3 compliant, matching the BA159GHB0G specification. RoHS3 compliance is a regulatory requirement in most markets. Ensure any substitute part carries RoHS3 certification for regulatory compliance.

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