BA159GHA0G Equivalent & Substitute Parts

Part Overview

The BA159GHA0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 1 A average rectified current. It features fast recovery characteristics with a reverse recovery time of 250 ns and is packaged in the DO-204AL (DO-41) through-hole axial format. The device is qualified to AEC-Q101 automotive standards and maintains active product status with 908 units in current inventory.

Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications permit operation with equivalent electrical characteristics. Substitution must maintain compatibility across voltage ratings, current capacity, recovery speed classification, and thermal operating range.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA	-
Reverse Recovery Time (trr)	250	ns
Current - Reverse Leakage @ Vr	5	µA @ 1000 V
Mounting Type	Through Hole	-
Package / Case	DO-204AL, DO-41, Axial	-
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	-
Qualification	AEC-Q101	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BA159GHA0G is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 1000 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Operating Temperature - Junction: Must encompass or exceed -55°C to 150°C range

Recovery Speed Classification: The BA159GHA0G operates as a fast recovery diode with trr ≤ 500 ns. Substitutes may operate as either fast recovery or standard recovery (>500 ns) devices, as standard recovery diodes are electrically compatible with fast recovery applications.

Packaging and Mounting: All substitute parts maintain through-hole axial mounting in DO-204AL (DO-41) format, ensuring mechanical and electrical compatibility with existing PCB designs.

Compliance and Certification: The BA159GHA0G carries AEC-Q101 automotive qualification. Substitute parts meeting ROHS3 compliance and REACH unaffected status maintain regulatory alignment.

Product Status Consideration: Active status parts are preferred for new designs. Parts marked "Last Time Buy" or "Not For New Designs" remain electrically equivalent but indicate manufacturing phase-out.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed Classification	trr [ns]	Ir @ Vr [µA]	Tj Range [°C]	Package	Product Status
BA159GHA0G	Taiwan Semiconductor Corporation	1000	1	1.2 @ 1 A	Fast Recovery ≤ 500ns	250	5 @ 1000 V	-55 to 150	DO-204AL (DO-41)	Active
1N4007-G	Comchip Technology	1000	1	1.1 @ 1 A	Standard Recovery >500ns	-	5 @ 1000 V	-55 to 150	DO-41	Active
1N4007-T	Diodes Incorporated	1000	1	1.0 @ 1 A	Standard Recovery >500ns	-	5 @ 1000 V	-65 to 150	DO-41	Last Time Buy
1N4007FFG	onsemi	1000	1	1.1 @ 1 A	Standard Recovery >500ns	-	10 @ 1000 V	-65 to 175	Axial	Not For New Designs
1N4007G	Taiwan Semiconductor Corporation	1000	1	1.0 @ 1 A	Standard Recovery >500ns	-	5 @ 1000 V	-55 to 150	DO-204AL (DO-41)	Active
1N4007GP-TP	Micro Commercial Co	1000	1	1.1 @ 1 A	Standard Recovery >500ns	2000	5 @ 1000 V	-55 to 150	DO-41	Active
1N4007RLG	onsemi	1000	1	1.1 @ 1 A	Standard Recovery >500ns	-	10 @ 1000 V	-65 to 175	Axial	Not For New Designs
1N4249GP-E3/54	Vishay General Semiconductor - Diodes Division	1000	1	1.2 @ 1 A	Standard Recovery >500ns	-	1 @ 1000 V	-65 to 160	DO-204AL (DO-41)	Active
A1N4007G-G	Comchip Technology	1000	1	1.1 @ 1 A	Standard Recovery >500ns	-	5 @ 1000 V	-55 to 125	DO-41	Active
MUR2100EG	onsemi	1000	2	2.2 @ 2 A	Fast Recovery ≤ 500ns	100	10 @ 1000 V	-65 to 175	Axial	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Equivalent Electrical Performance):

1N4007G (Taiwan Semiconductor Corporation) and 1N4007-G (Comchip Technology) are direct electrical equivalents with active product status. Both maintain 1000 V reverse voltage, 1 A current rating, and compatible operating temperature ranges. The 1N4007G variant from Taiwan Semiconductor Corporation is sourced from the same manufacturer as the primary part, ensuring consistency in manufacturing processes and quality standards.

Secondary Substitutes (Active Status, Extended Temperature Range):

1N4007-T (Diodes Incorporated) and 1N4007FFG (onsemi) provide extended lower temperature operation (-65°C minimum) compared to the BA159GHA0G (-55°C minimum). These parts are electrically compatible but carry product status designations indicating manufacturing phase-out considerations. The 1N4007-T is marked "Last Time Buy" and 1N4007FFG is marked "Not For New Designs," indicating limited availability for future procurement.

Specialized Substitute (Enhanced Leakage Performance):

1N4249GP-E3/54 (Vishay General Semiconductor - Diodes Division) offers superior reverse leakage characteristics (1 µA @ 1000 V versus 5 µA for the primary part) while maintaining equivalent voltage and current ratings. This part is suitable for applications requiring minimal leakage current performance.

Higher Current Capability (Uprating Substitute):

MUR2100EG (onsemi) provides 2 A average rectified current capacity with fast recovery characteristics (100 ns trr). This part is suitable for applications where the primary 1 A rating is insufficient, though it operates at higher forward voltage (2.2 V @ 2 A).

Automotive-Qualified Substitute:

A1N4007G-G (Comchip Technology) carries AEC-Q101 automotive qualification matching the primary part's grade designation. However, its maximum operating temperature is limited to 125°C, which is 25°C below the BA159GHA0G specification.

Substitutes to Avoid for New Designs:

1N4007RLG and 1N4007FFG are both marked "Not For New Designs" by onsemi, indicating these parts should not be selected for new product development despite electrical equivalence.

Frequently Asked Questions (FAQ)

Q: Can I substitute a standard recovery diode (1N4007G) for the fast recovery BA159GHA0G?

A: Yes. Standard recovery diodes are electrically compatible with fast recovery applications. The BA159GHA0G's 250 ns reverse recovery time is a performance advantage, not a requirement. Standard recovery diodes with trr >500 ns will function correctly in circuits designed for the BA159GHA0G, though they may exhibit slightly higher switching losses in high-frequency applications.

Q: What is the difference between DO-204AL and DO-41 packaging?

A: DO-204AL and DO-41 refer to the same physical package format. DO-204AL is the formal JEDEC designation, while DO-41 is the legacy industry designation. Both describe an axial through-hole diode package with identical mechanical and electrical characteristics.

Q: Can I use the MUR2100EG as a direct replacement for the BA159GHA0G?

A: The MUR2100EG is electrically compatible but not a direct replacement. It provides double the current capacity (2 A versus 1 A) and operates at higher forward voltage (2.2 V @ 2 A versus 1.2 V @ 1 A). Use MUR2100EG only when higher current capability is required or when the circuit design accommodates the increased forward voltage drop.

Q: Why should I avoid 1N4007RLG and 1N4007FFG for new designs?

A: Both parts carry "Not For New Designs" status from onsemi, indicating the manufacturer is phasing out these products. While electrically equivalent, they have limited long-term availability and should not be selected for new product development. Use 1N4007G or 1N4007-G instead.

Q: Does the BA159GHA0G require AEC-Q101 qualification in my application?

A: The BA159GHA0G carries AEC-Q101 automotive qualification. If your application requires automotive-grade components, select substitute parts with matching qualifications. A1N4007G-G also carries AEC-Q101 qualification. Standard commercial-grade substitutes (1N4007G, 1N4007-G) do not carry automotive qualification.

Q: What is the significance of reverse leakage current differences between substitutes?

A: Reverse leakage current (Ir) affects power consumption and circuit performance in high-impedance applications. The BA159GHA0G specifies 5 µA @ 1000 V. The 1N4249GP-E3/54 offers superior performance at 1 µA @ 1000 V, while onsemi parts (1N4007FFG, 1N4007RLG, MUR2100EG) specify 10 µA @ 1000 V. Select based on circuit leakage requirements.

Q: Can I substitute 1N4007-T if my circuit operates below -55°C?

A: Yes. The 1N4007-T extends the minimum operating temperature to -65°C, providing 10°C additional margin below the BA159GHA0G specification of -55°C. However, 1N4007-T carries "Last Time Buy" status, indicating limited future availability.

Q: What packaging format should I specify for through-hole PCB assembly?

A: All listed substitutes support through-hole mounting in axial format. Specify DO-204AL (DO-41) package designation for consistency with the primary part. Cut Tape (CT) packaging is suitable for automated assembly processes, while Bulk packaging is appropriate for manual assembly or reel-based operations.

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