BA159G A0G Equivalent & Substitute Parts

Part Overview

The BA159G A0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) axial through-hole package. This component is classified as a fast recovery diode with a reverse recovery time of 250 ns, suitable for applications requiring rapid switching characteristics. The part is currently Active in product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility permits selection from multiple qualified manufacturers while maintaining electrical and mechanical compatibility.

Substiute Parts

BA159G A0G
Taiwan Semiconductor CorporationIn Stock: 1297BA159G A0G Datasheet
BA159G A0G
Current Part
BA159G A0G
Taiwan Semiconductor CorporationIn Stock: 1297BA159G A0G Datasheet
BA159G A0G
Direct
1N4007-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 182731N4007-E3/73 Datasheet
1N4007-E3/73
Direct
1N4007E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1394361N4007E-E3/54 Datasheet
1N4007E-E3/54
Direct
1N4007E-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 550491N4007E-E3/73 Datasheet
1N4007E-E3/73
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1N4007-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 292661N4007-E3/53 Datasheet
1N4007-E3/53
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1N4007-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1377431N4007-E3/54 Datasheet
1N4007-E3/54
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1N4007-G
Comchip TechnologyIn Stock: 1413311N4007-G Datasheet
1N4007-G
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1N4007-T
Diodes IncorporatedIn Stock: 1501481N4007-T Datasheet
1N4007-T
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1N4007FFG
onsemiIn Stock: 653971N4007FFG Datasheet
1N4007FFG
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1N4007G
Taiwan Semiconductor CorporationIn Stock: 1714611N4007G Datasheet
1N4007G
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1N4007GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 153881N4007GP-E3/73 Datasheet
1N4007GP-E3/73
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1N4007GP-TP
Micro Commercial CoIn Stock: 82201N4007GP-TP Datasheet
1N4007GP-TP
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1N4007GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1103271N4007GPE-E3/54 Datasheet
1N4007GPE-E3/54
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1N4007GPE-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 147531N4007GPE-E3/73 Datasheet
1N4007GPE-E3/73
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1N4007RLG
onsemiIn Stock: 1503791N4007RLG Datasheet
1N4007RLG
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1N4249GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 120151N4249GP-E3/54 Datasheet
1N4249GP-E3/54
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1N4948GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 92781N4948GP-E3/54 Datasheet
1N4948GP-E3/54
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A1N4007G-G
Comchip TechnologyIn Stock: 1980A1N4007G-G Datasheet
A1N4007G-G
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BA159GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 5783BA159GP-E3/54 Datasheet
BA159GP-E3/54
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BA159GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 6553BA159GP-E3/73 Datasheet
BA159GP-E3/73
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GP10M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11652GP10M-E3/54 Datasheet
GP10M-E3/54
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MUR1100ERLG
onsemiIn Stock: 35187MUR1100ERLG Datasheet
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MUR2100EG
onsemiIn Stock: 9032MUR2100EG Datasheet
MUR2100EG
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RGP10M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2447RGP10M-E3/54 Datasheet
RGP10M-E3/54
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RGP10M-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2188RGP10M-E3/73 Datasheet
RGP10M-E3/73
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RGP10ME-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8375RGP10ME-E3/73 Datasheet
RGP10ME-E3/73
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UF4007-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 6274UF4007-E3/53 Datasheet
UF4007-E3/53
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) Maximum @ If 1.2 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 250 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Mounting Type Through Hole -
Package / Case DO-204AL, DO-41, Axial -
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution eligibility for the BA159G A0G is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) Maximum: 1000 V
  • Current - Average Rectified (Io): 1 A
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial configurations
  • RoHS Status: ROHS3 Compliant

Allowable Variation Parameters:

  • Voltage - Forward (Vf) Maximum: Substitute parts may range from 1.0 V to 1.2 V @ 1 A
  • Speed Classification: Both Fast Recovery (≤ 500ns) and Standard Recovery (> 500ns) diodes are acceptable
  • Reverse Recovery Time (trr): May vary based on speed classification
  • Current - Reverse Leakage @ Vr: Acceptable range 5 µA to 10 µA @ 1000 V
  • Capacitance @ Vr, F: May range from 8 pF to 15 pF @ 4V, 1MHz
  • Operating Temperature - Junction: Minimum -50°C to -65°C acceptable; maximum 150°C to 175°C acceptable

Substitute parts are grouped into two categories: Direct Substitutes (identical electrical and mechanical specifications) and Similar Substitutes (equivalent performance within allowable parameter ranges).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) @ If (V) Speed trr (ns) Ir @ Vr (µA) C @ Vr (pF) Tj (°C) Package Product Status Inventory (Pcs)
BA159G A0G Taiwan Semiconductor Corporation 1000 1 1.2 @ 1 Fast Recovery ≤ 500ns 250 5 @ 1000 15 @ 4V, 1MHz -55 to 150 DO-204AL (DO-41) Active 1287
1N4007-E3/73 Vishay General Semiconductor - Diodes Division 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -50 to 150 DO-204AL (DO-41) Active 54959
1N4007E-E3/54 Vishay General Semiconductor - Diodes Division 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -50 to 150 DO-204AL (DO-41) Active 139418
1N4007E-E3/73 Vishay General Semiconductor - Diodes Division 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -55 to 150 DO-204AL (DO-41) Active 54959
1N4007-E3/53 Vishay General Semiconductor - Diodes Division 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -50 to 150 DO-204AL (DO-41) Active 29180
1N4007-E3/54 Vishay General Semiconductor - Diodes Division 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -50 to 150 DO-204AL (DO-41) Active 137700
1N4007-G Comchip Technology 1000 1 1.1 @ 1 Standard Recovery > 500ns - 5 @ 1000 15 @ 4V, 1MHz -55 to 150 DO-204AL (DO-41) Active 141281
1N4007-T Diodes Incorporated 1000 1 1.0 @ 1 Standard Recovery > 500ns - 5 @ 1000 8 @ 4V, 1MHz -65 to 150 DO-204AL (DO-41) Last Time Buy 150100
1N4007FFG onsemi 1000 1 1.1 @ 1 Standard Recovery > 500ns - 10 @ 1000 - -65 to 175 Axial Not For New Designs 65309
1N4007G Taiwan Semiconductor Corporation 1000 1 1.0 @ 1 Standard Recovery > 500ns - 5 @ 1000 10 @ 4V, 1MHz -55 to 150 DO-204AL (DO-41) Active 171387

Engineering Selection Recommendations

Direct Substitutes (Recommended for New Designs):

The following parts are recommended as direct substitutes for the BA159G A0G based on Active product status and full compliance with electrical and mechanical specifications:

  1. 1N4007E-E3/73 (Vishay General Semiconductor - Diodes Division): Active status, 54,959 units in stock. Meets all mandatory parameters with forward voltage of 1.1 V @ 1 A and operating temperature range -55°C to 150°C matching the primary part.

  2. 1N4007E-E3/54 (Vishay General Semiconductor - Diodes Division): Active status, 139,418 units in stock. Highest inventory availability among Vishay variants. Identical electrical specifications to 1N4007E-E3/73.

  3. 1N4007-G (Comchip Technology): Active status, 141,281 units in stock. Meets all mandatory parameters with operating temperature range -55°C to 150°C.

  4. 1N4007G (Taiwan Semiconductor Corporation): Active status, 171,387 units in stock. Same manufacturer as primary part. Forward voltage 1.0 V @ 1 A provides superior performance margin.

Alternative Substitutes (Acceptable with Design Verification):

  1. 1N4007-E3/53 (Vishay General Semiconductor - Diodes Division): Active status, 29,180 units in stock. Operating temperature minimum -50°C (versus -55°C for primary part).

  2. 1N4007-E3/73 (Vishay General Semiconductor - Diodes Division): Active status, 54,959 units in stock. Operating temperature minimum -50°C.

  3. 1N4007-T (Diodes Incorporated): Last Time Buy status. Not recommended for new designs. Operating temperature range -65°C to 150°C exceeds primary part specifications.

Not Recommended:

  1. 1N4007FFG (onsemi): Product status "Not For New Designs" disqualifies this part for new applications. Reverse leakage current 10 µA @ 1000 V exceeds primary part specification of 5 µA.

Frequently Asked Questions (FAQ)

Q: Can I use a standard recovery diode (1N4007-E3/73) as a substitute for the fast recovery BA159G A0G?

A: Yes. The 1N4007-E3/73 meets all mandatory electrical parameters: 1000 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage @ 1 A, and identical package configuration (DO-204AL). The primary difference is recovery speed classification. Standard recovery diodes (> 500ns) are acceptable substitutes for fast recovery applications in most general-purpose rectification circuits. Application-specific switching frequency requirements should be evaluated.

Q: What is the difference between DO-204AL and DO-41 package designations?

A: DO-204AL and DO-41 are equivalent package designations for the same axial through-hole diode package. Both refer to a cylindrical component with leads at each end, suitable for through-hole PCB mounting. All substitute parts listed are compatible with existing BA159G A0G board layouts.

Q: Why does the 1N4007FFG show "Not For New Designs" status?

A: The 1N4007FFG is designated "Not For New Designs" by onsemi, indicating the manufacturer is discontinuing this product line. Additionally, the reverse leakage current specification (10 µA @ 1000 V) exceeds the primary part specification (5 µA @ 1000 V), making it unsuitable for applications with strict leakage requirements.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. Inventory levels vary significantly among substitutes. The 1N4007E-E3/54 offers the highest inventory (139,418 units), followed by 1N4007G (171,387 units). The primary part BA159G A0G has limited inventory (1,287 units). For supply chain continuity, substitutes with higher inventory levels provide greater availability assurance.

Q: What is the significance of forward voltage differences (1.0 V versus 1.2 V)?

A: Forward voltage variation within the specified range (1.0 V to 1.2 V @ 1 A) is acceptable for general-purpose rectification. Lower forward voltage (1.0 V) results in reduced power dissipation and heat generation. Higher forward voltage (1.2 V) results in increased power dissipation. Selection depends on thermal design requirements and power budget constraints of the application.

Q: Can I substitute the BA159G A0G with a part having different operating temperature range?

A: Operating temperature range differences require application-specific evaluation. The primary part operates from -55°C to 150°C. Substitutes with narrower ranges (such as -50°C to 150°C) are acceptable if the application does not require operation below -50°C. Substitutes with extended ranges (such as -65°C to 175°C) provide additional margin but may not be necessary for all applications.

Q: What does ROHS3 compliance mean for this component?

A: ROHS3 compliance indicates the component meets Restriction of Hazardous Substances Directive 3 requirements, restricting the use of specific hazardous materials including lead, mercury, cadmium, and certain flame retardants. All listed substitute parts maintain ROHS3 compliance, ensuring regulatory compatibility with modern electronic equipment standards.

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