BA158G Equivalent & Substitute Parts

Part Overview

The BA158G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This component is classified as a fast recovery diode with a reverse recovery time of 150 ns, suitable for applications requiring rapid switching characteristics. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified to address component availability, supply chain continuity, and application-specific performance requirements while maintaining electrical and mechanical compatibility within the 600 V / 1 A rectifier diode category.

Substiute Parts

BA158G
Taiwan Semiconductor CorporationIn Stock: 1206BA158G Datasheet
BA158G
Current Part
1N4937G
Taiwan Semiconductor CorporationIn Stock: 21191N4937G Datasheet
1N4937G
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1N4937GH
Taiwan Semiconductor CorporationIn Stock: 110201N4937GH Datasheet
1N4937GH
Parametric Equivalent
1N4005-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 67721N4005-E3/54 Datasheet
1N4005-E3/54
Direct
1N4005-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 804461N4005-E3/73 Datasheet
1N4005-E3/73
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1N4005-G
Comchip TechnologyIn Stock: 7321N4005-G Datasheet
1N4005-G
Direct
1N4005E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 220051N4005E-E3/54 Datasheet
1N4005E-E3/54
Direct
1N4005-T
Diodes IncorporatedIn Stock: 112651N4005-T Datasheet
1N4005-T
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1N4005G
Good-Ark SemiconductorIn Stock: 51751N4005G Datasheet
1N4005G
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1N4005GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 610111N4005GP-E3/54 Datasheet
1N4005GP-E3/54
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1N4005GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 122991N4005GP-E3/73 Datasheet
1N4005GP-E3/73
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1N4005GPE-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 98941N4005GPE-E3/53 Datasheet
1N4005GPE-E3/53
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1N4005GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 117771N4005GPE-E3/54 Datasheet
1N4005GPE-E3/54
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1N4005RLG
onsemiIn Stock: 12631N4005RLG Datasheet
1N4005RLG
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1N4937G
Taiwan Semiconductor CorporationIn Stock: 21191N4937G Datasheet
1N4937G
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1N4937GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 214341N4937GP-E3/54 Datasheet
1N4937GP-E3/54
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1N4937GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 54661N4937GP-E3/73 Datasheet
1N4937GP-E3/73
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1N4937RLG
onsemiIn Stock: 43691N4937RLG Datasheet
1N4937RLG
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1N4946GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 103831N4946GP-E3/54 Datasheet
1N4946GP-E3/54
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GP10J-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 13114GP10J-E3/54 Datasheet
GP10J-E3/54
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MRA4005T1G
onsemiIn Stock: 820339MRA4005T1G Datasheet
MRA4005T1G
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MRA4005T3G
onsemiIn Stock: 820479MRA4005T3G Datasheet
MRA4005T3G
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MUR160G
onsemiIn Stock: 2002MUR160G Datasheet
MUR160G
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MUR160RLG
onsemiIn Stock: 95246MUR160RLG Datasheet
MUR160RLG
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MUR260G
onsemiIn Stock: 4284MUR260G Datasheet
MUR260G
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MUR260RLG
onsemiIn Stock: 80405MUR260RLG Datasheet
MUR260RLG
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NRVA4005T3G
onsemiIn Stock: 65209NRVA4005T3G Datasheet
NRVA4005T3G
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RGP10J-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6541RGP10J-E3/54 Datasheet
RGP10J-E3/54
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RGP10JE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 12173RGP10JE-E3/54 Datasheet
RGP10JE-E3/54
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SBYV26C-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 103757SBYV26C-E3/54 Datasheet
SBYV26C-E3/54
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SBYV26C-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8700SBYV26C-E3/73 Datasheet
SBYV26C-E3/73
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PG4937_R2_00001
Panjit International Inc.In Stock: 6167PG4937_R2_00001 Datasheet
PG4937_R2_00001
Parametric Equivalent

Key Parameters

Parameter BA158G Specification
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 15 pF @ 4 V, 1 MHz
Package / Case DO-204AL, DO-41, Axial
Mounting Type Through Hole
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the BA158G are classified into two primary categories based on electrical performance characteristics:

Fast Recovery Equivalents maintain the fast recovery speed classification (≤ 500 ns) with reverse recovery times at or below 200 ns. These parts are direct functional equivalents suitable for applications where switching speed is critical.

Standard Recovery Alternatives feature standard recovery speed (> 500 ns) with longer reverse recovery times. These parts meet the same voltage and current ratings but operate with different switching characteristics, appropriate for applications where recovery speed is not a limiting factor.

Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V (required match)
  • Current - Average Rectified (Io): 1 A (required match)
  • Package / Case: DO-204AL, DO-41, Axial (required match)
  • Mounting Type: Through Hole (required match)
  • Operating Temperature Range: -55°C minimum, 150°C minimum maximum
  • RoHS3 Compliance: Required
  • MSL 1 (Unlimited): Required

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed Classification trr (ns) Package Temp Range (°C) Product Status
BA158G Taiwan Semiconductor Corporation 600 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500 ns 150 DO-204AL (DO-41) -55 ~ 150 Active
1N4937G Taiwan Semiconductor Corporation 600 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500 ns 200 DO-204AL (DO-41) -55 ~ 150 Active
1N4937GH Taiwan Semiconductor Corporation 600 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500 ns 200 DO-204AL (DO-41) -55 ~ 150 Active
1N4005-E3/54 Vishay General Semiconductor - Diodes Division 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified DO-204AL (DO-41) -55 ~ 150 Active
1N4005-E3/73 Vishay General Semiconductor - Diodes Division 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified DO-204AL (DO-41) -55 ~ 150 Active
1N4005-G Comchip Technology 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified DO-204AL (DO-41) -55 ~ 150 Active
1N4005E-E3/54 Vishay General Semiconductor - Diodes Division 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns Not specified DO-204AL (DO-41) -55 ~ 150 Active
1N4005-T Diodes Incorporated 600 V 1 A 1.0 V @ 1 A Standard Recovery > 500 ns Not specified DO-204AL (DO-41) -65 ~ 150 Last Time Buy
1N4005G Good-Ark Semiconductor 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns 1000 DO-204AL (DO-41) -55 ~ 150 Active
1N4005GP-E3/54 Vishay General Semiconductor - Diodes Division 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns 2000 DO-204AL (DO-41) -65 ~ 175 Active
1N4005GP-E3/73 Vishay General Semiconductor - Diodes Division 600 V 1 A 1.1 V @ 1 A Standard Recovery > 500 ns 2000 DO-204AL (DO-41) -65 ~ 175 Active

Engineering Selection Recommendations

Fast Recovery Substitutes (Preferred for Speed-Critical Applications):

The 1N4937G and 1N4937GH maintain fast recovery characteristics with reverse recovery times of 200 ns, representing the closest functional equivalents to the BA158G. Both parts are manufactured by Taiwan Semiconductor Corporation with Active product status. The 1N4937GH variant includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability. These parts are recommended when switching speed performance is a design requirement.

Standard Recovery Alternatives (General-Purpose Applications):

The 1N4005 series variants (1N4005-E3/54, 1N4005-E3/73, 1N4005-G, 1N4005E-E3/54, 1N4005G, 1N4005GP-E3/54, 1N4005GP-E3/73) provide functional substitution for applications where standard recovery speed is acceptable. All variants maintain 600 V / 1 A ratings with DO-204AL (DO-41) through-hole packaging. Forward voltage characteristics range from 1.0 V to 1.1 V at 1 A, representing marginal improvement over the BA158G specification of 1.2 V. The 1N4005GP-E3/54 and 1N4005GP-E3/73 variants feature extended operating temperature ranges (-65°C to 175°C) compared to the BA158G (-55°C to 150°C), providing thermal margin for demanding environments.

Product Status Considerations:

The 1N4005-T (Diodes Incorporated) carries Last Time Buy status, indicating discontinued production. This part should be avoided for new designs requiring long-term component availability.

All recommended substitutes maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity classification, ensuring compatibility with standard manufacturing and storage practices.

Frequently Asked Questions (FAQ)

Q: Can the 1N4937G directly replace the BA158G in existing designs?

A: Yes. The 1N4937G meets all critical electrical parameters: 600 V reverse voltage, 1 A average rectified current, and identical DO-204AL (DO-41) through-hole package. The 200 ns reverse recovery time is slightly longer than the BA158G (150 ns) but remains within the fast recovery classification. Both parts are manufactured by Taiwan Semiconductor Corporation with Active product status.

Q: What is the primary difference between fast recovery (BA158G, 1N4937G) and standard recovery (1N4005 series) diodes?

A: Fast recovery diodes exhibit reverse recovery times of 150-200 ns, enabling rapid switching transitions suitable for high-frequency applications. Standard recovery diodes feature reverse recovery times exceeding 500 ns, appropriate for lower-frequency rectification and general-purpose applications. Both categories meet the same 600 V / 1 A electrical ratings and DO-204AL packaging requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity classification, meeting current environmental and manufacturing standards.

Q: Does the 1N4005GP-E3/54 extended temperature range (-65°C to 175°C) provide advantages over the BA158G (-55°C to 150°C)?

A: The extended temperature range of the 1N4005GP-E3/54 provides operational margin in high-temperature environments. However, this part features standard recovery speed (2000 ns reverse recovery time) rather than fast recovery characteristics. Selection depends on whether temperature range or switching speed is the primary design constraint.

Q: Why is the 1N4005-T listed as Last Time Buy?

A: Last Time Buy status indicates the manufacturer has discontinued production. This part should not be selected for new designs requiring long-term component availability and supply continuity.

Q: Can standard recovery diodes (1N4005 series) be used in applications designed for fast recovery diodes (BA158G)?

A: Standard recovery diodes can function in circuits designed for fast recovery diodes if the application does not depend on rapid switching transitions. However, the significantly longer reverse recovery times (500 ns to 2000 ns versus 150-200 ns) may degrade performance in high-frequency switching applications. Application-specific circuit analysis is required to determine compatibility.

Q: What is the significance of the 1N4937GH AEC-Q101 automotive qualification?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. The 1N4937GH is suitable for automotive applications requiring certified component traceability and enhanced reliability documentation. Non-automotive applications can use the standard 1N4937G variant.

Q: Are there packaging differences between substitute parts?

A: All listed substitute parts use DO-204AL (DO-41) through-hole axial packaging, maintaining mechanical and electrical compatibility. Packaging variations exist only in supplier designation (Cut Tape vs. Tape & Box), which does not affect component functionality or circuit performance.

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