B772-O-TP Equivalent & Substitute Parts

Part Overview

The B772-O-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 30V collector-emitter breakdown voltage and 3A maximum collector current in a surface mount DPAK package. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The part operates across an industrial temperature range of -55°C to 150°C and is RoHS3 compliant with unlimited moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	3	A
Voltage - Collector Emitter Breakdown (Max)	30	V
Power - Max	1.25	W
Frequency - Transition	50	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the B772-O-TP is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

Transistor polarity: PNP configuration
Collector current rating: 3A maximum
Package type: TO-252-3 DPAK surface mount
Mounting compatibility: Surface mount technology

Allowable Parameter Variations:

Collector-emitter breakdown voltage: Substitute must equal or exceed 30V
Power dissipation: Substitute must equal or exceed 1.25W
Operating temperature range: Substitute must encompass or exceed -55°C to 150°C
Transition frequency: No minimum requirement specified
DC current gain: Application-dependent; no restriction on substitution

The NJVMJD32T4G from onsemi satisfies all mandatory criteria and exceeds the electrical performance envelope of the B772-O-TP across all comparable parameters.

Parameter Comparison

Parameter	B772-O-TP (Main Part)	NJVMJD32T4G (Substitute)	Compatibility
Manufacturer	Micro Commercial Co	onsemi	Different manufacturer
Transistor Type	PNP	PNP	Match
Current - Collector (Ic) Max	3 A	3 A	Match
Voltage - Collector Emitter Breakdown (Max)	30 V	40 V	Substitute exceeds requirement
Vce Saturation (Max)	500mV @ 200mA, 2A	1.2V @ 375mA, 3A	Different test conditions
Current - Collector Cutoff (Max)	10µA	50µA	Substitute higher leakage
DC Current Gain (hFE) Min	100 @ 1A, 2V	10 @ 3A, 4V	Different test conditions
Power - Max	1.25 W	1.56 W	Substitute exceeds requirement
Frequency - Transition	50 MHz	3 MHz	Substitute lower frequency
Operating Temperature Range	-55°C to 150°C	-65°C to 150°C	Substitute exceeds requirement
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	Match
Mounting Type	Surface Mount	Surface Mount	Match
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Match
Product Status	Obsolete	Active	Substitute actively manufactured

Engineering Selection Recommendations

The NJVMJD32T4G is a qualified substitute for the B772-O-TP based on the following engineering factors:

Compliance and Availability: The B772-O-TP is classified as obsolete, while the NJVMJD32T4G maintains active product status with 10,400 units in stock. Both parts are RoHS3 compliant and carry unlimited moisture sensitivity rating (MSL 1), ensuring equivalent environmental qualification.

Electrical Performance: The NJVMJD32T4G provides equal or superior electrical characteristics across all critical parameters. The 40V collector-emitter breakdown voltage exceeds the 30V requirement, and the 1.56W power rating surpasses the 1.25W specification. The substitute operates across an extended temperature range (-65°C to 150°C) that encompasses the B772-O-TP operating window.

Package and Mechanical Compatibility: Both parts utilize identical TO-252-3 DPAK surface mount packaging with two leads plus tab configuration, ensuring direct PCB layout compatibility without redesign.

Transition Frequency Consideration: The NJVMJD32T4G operates at 3MHz transition frequency compared to the B772-O-TP at 50MHz. Applications requiring high-frequency switching performance above 3MHz require circuit-level evaluation to confirm functional equivalence.

Frequently Asked Questions (FAQ)

Q: Can the NJVMJD32T4G directly replace the B772-O-TP on existing PCBs?

A: Yes. Both parts share identical TO-252-3 DPAK package geometry and pinout configuration. No PCB layout modifications are required for mechanical or electrical connection.

Q: What is the primary reason for substitution?

A: The B772-O-TP is obsolete and no longer manufactured. The NJVMJD32T4G is an active product with established supply chain availability.

Q: Are there differences in saturation voltage between these parts?

A: Yes. The B772-O-TP specifies 500mV saturation at 200mA/2A, while the NJVMJD32T4G specifies 1.2V at 375mA/3A. These measurements occur at different bias conditions and cannot be directly compared. Circuit performance depends on specific application bias points.

Q: Does the lower transition frequency of the NJVMJD32T4G affect compatibility?

A: The NJVMJD32T4G operates at 3MHz transition frequency versus 50MHz for the B772-O-TP. Applications utilizing switching frequencies below 3MHz experience no functional impact. High-frequency switching circuits require evaluation of actual switching performance at the intended operating frequency.

Q: Are both parts RoHS compliant?

A: Yes. Both the B772-O-TP and NJVMJD32T4G are RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Q: What is the temperature operating range difference?

A: The NJVMJD32T4G extends the lower temperature limit to -65°C compared to -55°C for the B772-O-TP. Both parts operate to 150°C maximum junction temperature. The substitute provides broader low-temperature capability.

Q: Is the higher collector cutoff current of the NJVMJD32T4G significant?

A: The NJVMJD32T4G specifies 50µA maximum collector cutoff current versus 10µA for the B772-O-TP. This represents higher leakage current in the off state. Applications sensitive to leakage current in low-power standby modes require circuit-level analysis.

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