AUIRS2012STR Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The AUIRS2012STR is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 10V to 20V and delivers peak output currents of 2A for both source and sink operations. The part is classified as obsolete, making identification of suitable substitute components essential for ongoing system support and new design implementations.

Substiute Parts

AUIRS2012STR
Infineon TechnologiesIn Stock: 10364AUIRS2012STR Datasheet
AUIRS2012STR
Current Part
MIC4101YM-TR
Microchip TechnologyIn Stock: 2860MIC4101YM-TR Datasheet
MIC4101YM-TR
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number AUIRS2012STR
Manufacturer Infineon Technologies
Category Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 8SOIC
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 200 V
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -40°C ~ 125°C (TA)
Product Status Obsolete
Grade Automotive
Qualification AEC-Q100

Substitute Part Grouping Explanation

Substitution of the AUIRS2012STR is determined by the following critical parameters:

  • Driven Configuration: Must be half-bridge topology with independent channel control
  • Number of Drivers: Exactly 2 drivers required
  • Gate Type: N-channel MOSFET driving capability
  • Input Type: Non-inverting logic
  • Package / Case: 8-SOIC form factor for PCB compatibility
  • Peak Output Current: Minimum 2A source and sink capability
  • Supply Voltage Range: Must accommodate the operating range of the original design
  • High Side Bootstrap Voltage: Maximum rating must support system requirements
  • Operating Temperature Range: -40°C to 125°C minimum

The MIC4101YM-TR from Microchip Technology meets these core substitution criteria while maintaining functional equivalence in half-bridge gate driver applications.

Parameter Comparison

Parameter AUIRS2012STR (Infineon) MIC4101YM-TR (Microchip) Compatibility Notes
Driven Configuration Half-Bridge Half-Bridge Matched
Channel Type Independent Independent Matched
Number of Drivers 2 2 Matched
Gate Type N-Channel MOSFET N-Channel MOSFET Matched
Input Type Non-Inverting Non-Inverting Matched
Voltage - Supply 10V ~ 20V 9V ~ 16V Microchip range is narrower; verify upper limit compatibility
Logic Voltage - VIL, VIH 0.7V, 2.5V 0.8V, 2.2V Slight variation; verify input signal levels
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A Matched
High Side Voltage - Max (Bootstrap) 200 V 118 V Microchip rating is lower; verify system bootstrap voltage requirements
Rise / Fall Time (Typ) 22ns, 15ns 400ns, 400ns Microchip has significantly slower switching; evaluate timing-critical applications
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TJ) Matched
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Matched; pin-compatible
Mounting Type Surface Mount Surface Mount Matched
Product Status Obsolete Active Substitute is in active production

Engineering Selection Recommendations

The MIC4101YM-TR is a functionally equivalent substitute for the AUIRS2012STR based on matching core specifications: half-bridge configuration, dual independent N-channel MOSFET drivers, non-inverting input logic, identical 8-SOIC package, and equivalent peak output current ratings.

Key considerations for selection:

Supply Voltage Compatibility: The MIC4101YM-TR operates within 9V to 16V, which is narrower than the AUIRS2012STR range of 10V to 20V. Verify that the system supply voltage does not exceed 16V during normal operation or transient conditions.

Bootstrap Voltage Rating: The MIC4101YM-TR has a maximum bootstrap voltage of 118V compared to the AUIRS2012STR at 200V. Confirm that the half-bridge topology does not generate bootstrap voltages exceeding 118V in the target application.

Switching Speed: The MIC4101YM-TR exhibits significantly slower rise and fall times (400ns typical) compared to the AUIRS2012STR (22ns and 15ns typical). Applications requiring fast switching transitions or operating at high frequencies must evaluate whether this performance difference impacts system efficiency or EMI characteristics.

Compliance and Production Status: The MIC4101YM-TR is in active production with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), providing superior long-term availability and supply chain stability compared to the obsolete AUIRS2012STR.

Frequently Asked Questions (FAQ)

Q: Can the MIC4101YM-TR be used as a direct pin-for-pin replacement for the AUIRS2012STR?

A: Yes, both devices use the 8-SOIC package with identical pinout and footprint. However, electrical parameter differences require circuit validation before implementation.

Q: What is the primary limitation when substituting the MIC4101YM-TR for the AUIRS2012STR?

A: The MIC4101YM-TR has a lower maximum bootstrap voltage rating (118V versus 200V) and significantly slower switching times (400ns versus 15-22ns). Applications operating near these limits require detailed performance analysis.

Q: Does the supply voltage range difference affect compatibility?

A: The MIC4101YM-TR operates from 9V to 16V, which is narrower than the AUIRS2012STR range of 10V to 20V. If the system supply voltage exceeds 16V, the MIC4101YM-TR cannot be used.

Q: Are there any compliance or certification differences between these parts?

A: The AUIRS2012STR carries AEC-Q100 automotive qualification and is Infineon's automotive-grade product. The MIC4101YM-TR is RoHS3 compliant with unlimited MSL rating, indicating superior handling and storage characteristics for modern manufacturing environments.

Q: How do the input logic thresholds compare?

A: The AUIRS2012STR has VIL of 0.7V and VIH of 2.5V, while the MIC4101YM-TR has VIL of 0.8V and VIH of 2.2V. Verify that control signal levels from the system microcontroller or PWM source meet the MIC4101YM-TR thresholds.

Q: Is the slower switching speed of the MIC4101YM-TR a concern for high-frequency applications?

A: The 400ns rise and fall times of the MIC4101YM-TR are significantly slower than the AUIRS2012STR. For applications operating above 10 kHz or requiring minimal gate charge delay, conduct switching loss and EMI analysis to confirm acceptability.

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