AUIRLU024Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLU024Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 16A continuous drain current at 25°C. This device is part of the HEXFET® series and features a through-hole IPAK (TO-251AA) package configuration. The AUIRLU024Z is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

AUIRLU024Z

Infineon TechnologiesIn Stock: 13898AUIRLU024Z Datasheet

Current PartRFQ

IRLU024NPBF

Infineon TechnologiesIn Stock: 86187IRLU024NPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the obsolete AUIRLU024Z is based on electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The primary substitute, IRLU024NPBF, maintains the same drain-to-source voltage rating (55V) and package configuration (TO-251AA IPAK through-hole), ensuring mechanical and thermal interface compatibility.

Substitution eligibility is determined by the following critical parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
• Continuous Drain Current (Id): Must meet or exceed 16A at 25°C
• Package Type: Must be TO-251-3 Short Leads, IPAK, or TO-251AA
• Mounting Type: Must be through-hole configuration
• Operating Temperature Range: Must encompass -55°C to 175°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits

Parameter Comparison

Engineering Selection Recommendations

The IRLU024NPBF is the manufacturer-recommended substitute for the obsolete AUIRLU024Z. This substitute maintains identical voltage and package specifications while providing enhanced performance characteristics.

Compliance and Status Considerations:

The IRLU024NPBF holds Active product status, ensuring long-term availability and continued manufacturer support. Both parts maintain REACH Unaffected status and EAR99 ECCN classification, indicating equivalent regulatory compliance. The substitute carries RoHS3 compliance certification, meeting current environmental standards.

Performance Advantages:

The IRLU024NPBF provides a 1A increase in continuous drain current (17A versus 16A), higher power dissipation capability (45W versus 35W), and improved thermal performance. These enhancements provide design margin for existing applications while maintaining full electrical compatibility through identical voltage ratings and package configuration.

Thermal and Mechanical Compatibility:

Both devices utilize the TO-251AA IPAK through-hole package, ensuring direct mechanical and thermal interface compatibility on existing printed circuit boards. No PCB layout modifications are required for substitution.

Frequently Asked Questions (FAQ)

Q: Can the IRLU024NPBF directly replace the AUIRLU024Z without PCB modifications?

A: Yes. Both devices use the TO-251AA IPAK through-hole package with identical pin configuration and thermal interface requirements. No PCB layout changes are necessary.

Q: What is the significance of the higher gate charge (15 nC versus 9.9 nC) in the IRLU024NPBF?

A: The increased gate charge reflects the higher current rating of the substitute device. Gate drive circuits must supply sufficient charge to fully enhance the device. Existing gate drive circuits designed for the AUIRLU024Z will operate the IRLU024NPBF within specification, though switching speed may differ slightly.

Q: Are there differences in on-state resistance between these devices?

A: The IRLU024NPBF exhibits 65 mOhm maximum on-state resistance compared to 58 mOhm for the AUIRLU024Z. This 7 mOhm difference is within typical manufacturing variation for this device class and does not preclude substitution in applications designed for the original part.

Q: Why is the AUIRLU024Z classified as obsolete?

A: The AUIRLU024Z has been superseded by the IRLU024NPBF, which offers improved performance specifications and active manufacturer support. Infineon Technologies has transitioned production to the newer variant.

Q: What is the impact of the lower gate threshold voltage (2V versus 3V) in the substitute?

A: The lower threshold voltage in the IRLU024NPBF indicates easier gate enhancement at lower drive voltages. This represents an improvement over the original part and does not create compatibility issues with existing gate drive circuits operating at ±16V maximum gate voltage.

Q: Are both devices suitable for the same thermal management approach?

A: Yes. Both devices operate across the identical temperature range (-55°C to 175°C) and use the same package thermal interface. The IRLU024NPBF's higher power dissipation rating (45W versus 35W) provides additional thermal margin in applications approaching the original device's power limits.

Q: What packaging options are available for the IRLU024NPBF?

A: The IRLU024NPBF is supplied in tube packaging, whereas the AUIRLU024Z packaging format is not specified in the provided data. Both devices maintain the same TO-251AA IPAK component form factor.