AUIRLS3036-7P N-Channel 60V 240A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLS3036-7P is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications requiring 60V drain-to-source voltage rating and 240A continuous drain current capability. This device features the HEXFET® series technology in a D2PAK (7-Lead) surface mount package with 380W maximum power dissipation at case temperature.

The AUIRLS3036-7P is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities where this component is specified in existing designs or where inventory depletion requires alternative sourcing.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	240	A
Rds On (Max) @ 180A, 10V	1.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 4.5V	160	nC
Power Dissipation (Max)	380	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (7-Lead)	TO-263-7
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AUIRLS3036-7P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) rating must support the application's current requirements
On-state resistance (Rds On) must be compatible with thermal and efficiency constraints
Gate threshold voltage (Vgs(th)) must fall within acceptable drive circuit specifications
Gate charge (Qg) affects switching speed and drive circuit design
Maximum power dissipation rating must accommodate thermal conditions

Mechanical Compatibility Criteria:

Surface mount package type must be compatible with PCB layout and assembly equipment
Lead configuration and pin assignment must match circuit board design
Package thermal characteristics must support the application's heat dissipation requirements

Regulatory and Compliance Criteria:

RoHS3 compliance status
Moisture Sensitivity Level (MSL)
REACH compliance status

The substitute parts listed below meet the core electrical requirements of 60V Vdss rating and N-Channel MOSFET technology. However, each substitute exhibits different current ratings, on-state resistance characteristics, and package configurations that must be evaluated against specific application requirements.

Parameter Comparison

Parameter	AUIRLS3036-7P	IPB017N06N3GATMA1	STH260N6F6-2	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	STMicroelectronics
Series	HEXFET®	OptiMOS™	DeepGATE™, STripFET™ VI
Product Status	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	240	180	180	A
Rds On (Max)	1.9 @ 180A, 10V	1.7 @ 100A, 10V	2.4 @ 60A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	2.5 @ 250µA	4.0 @ 196µA	4.0 @ 250µA	V
Gate Charge (Qg) @ 10V	160 @ 4.5V	275 @ 10V	183 @ 10V	nC
Maximum Gate Voltage (Vgs)	±16	±20	±20	V
Input Capacitance (Ciss) @ Vds	11270 @ 50V	23000 @ 30V	11800 @ 25V	pF
Power Dissipation (Max)	380	250	300	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	D2PAK (7-Lead)	PG-TO263-7	H2PAK-2
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IPB017N06N3GATMA1 (Infineon Technologies OptiMOS™)

The IPB017N06N3GATMA1 is an active product from Infineon Technologies with identical 60V Vdss rating. This substitute exhibits a continuous drain current rating of 180A, which is 75% of the AUIRLS3036-7P specification. The on-state resistance of 1.7 mOhm at 100A, 10V is superior to the original part's 1.9 mOhm specification. The package configuration is PG-TO263-7, which maintains compatibility with D2PAK (7-Lead) footprints. Gate charge is higher at 275 nC, indicating increased switching losses. Maximum power dissipation is rated at 250W, which is 66% of the original part's 380W rating. This substitute is suitable for applications where the 180A current rating is sufficient and thermal management can accommodate the reduced power dissipation specification. RoHS3 compliance and MSL 1 rating match the original part.

STH260N6F6-2 (STMicroelectronics DeepGATE™/STripFET™ VI)

The STH260N6F6-2 is an active product from STMicroelectronics with identical 60V Vdss rating and 180A continuous drain current specification. The on-state resistance of 2.4 mOhm at 60A, 10V is higher than both the original part and the IPB017N06N3GATMA1. The package configuration is H2PAK-2 (TO-263-3), which differs from the original D2PAK (7-Lead) configuration and requires PCB layout modification. Gate charge is 183 nC at 10V, which is lower than the IPB017N06N3GATMA1 and closer to the original part's switching characteristics. Maximum power dissipation is rated at 300W. This substitute is suitable for applications where package footprint modification is acceptable and the 180A current rating meets application requirements. RoHS3 compliance and MSL 1 rating match the original part.

Both substitute parts are active products with full regulatory compliance. Selection between these substitutes depends on application current requirements, thermal constraints, and PCB layout flexibility.

Frequently Asked Questions (FAQ)

Q: Can the IPB017N06N3GATMA1 directly replace the AUIRLS3036-7P without circuit modification?

A: The IPB017N06N3GATMA1 shares the same 60V Vdss rating and D2PAK (7-Lead) package footprint compatibility. However, the reduced continuous drain current rating of 180A versus 240A requires verification that the application does not exceed this current limit. The higher gate charge (275 nC) may require drive circuit evaluation. Pin-to-pin compatibility must be confirmed with detailed package documentation before implementation.

Q: What are the key differences between the two substitute parts?

A: The IPB017N06N3GATMA1 (Infineon) maintains the D2PAK (7-Lead) package footprint, while the STH260N6F6-2 (STMicroelectronics) uses an H2PAK-2 package requiring PCB layout modification. The IPB017N06N3GATMA1 has lower on-state resistance at higher current levels (1.7 mOhm @ 100A), while the STH260N6F6-2 has lower gate charge (183 nC). Both are rated for 180A continuous drain current, which is 75% of the original part's 240A specification.

Q: Why is the continuous drain current lower in the substitute parts?

A: The substitute parts (IPB017N06N3GATMA1 and STH260N6F6-2) are rated for 180A continuous drain current, compared to the AUIRLS3036-7P's 240A specification. This reflects different device design and thermal management characteristics. Applications requiring the full 240A rating must evaluate whether the 180A substitutes are adequate for the specific use case, or alternative parts with higher current ratings must be sourced.

Q: Are both substitute parts suitable for high-temperature applications?

A: Both substitute parts support the same operating temperature range of -55°C to 175°C as the original AUIRLS3036-7P. However, the reduced maximum power dissipation ratings (250W for IPB017N06N3GATMA1 and 300W for STH260N6F6-2 versus 380W for the original) must be considered in thermal design calculations. At elevated junction temperatures, the on-state resistance increases, which may affect current-carrying capability.

Q: What packaging considerations apply when selecting a substitute?

A: The IPB017N06N3GATMA1 maintains the D2PAK (7-Lead) package footprint, allowing direct PCB placement without layout modification. The STH260N6F6-2 uses an H2PAK-2 package (TO-263-3), which has a different lead configuration and requires PCB redesign. Package selection depends on whether existing PCB layouts can be modified or whether footprint compatibility is mandatory.

Q: Are there compliance or regulatory differences between the original and substitute parts?

A: All three parts (AUIRLS3036-7P, IPB017N06N3GATMA1, and STH260N6F6-2) are RoHS3 compliant, have MSL 1 (Unlimited) moisture sensitivity ratings, and are REACH unaffected. No regulatory or compliance barriers exist for substitution from this perspective. However, the AUIRLS3036-7P is classified as obsolete, while both substitutes are active products with ongoing manufacturer support.

Q: What is the impact of higher gate charge on circuit design?

A: The IPB017N06N3GATMA1 has gate charge of 275 nC at 10V, compared to 160 nC at 4.5V for the original part. Higher gate charge increases the time required to switch the device on and off, which may increase switching losses and heat generation. Drive circuits must supply sufficient gate current to achieve the desired switching speed. The STH260N6F6-2 has lower gate charge (183 nC), which is closer to the original part's switching characteristics.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message