AUIRLS3036 N-Channel 60V 195A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLS3036 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the 60V voltage rating, surface mount D2PAK packaging, and operating temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	195	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	2.4 mOhm @ 165A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2.5	V @ 250µA
Power Dissipation (Max)	380	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AUIRLS3036 is determined by the following critical parameters:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): 60V (exact match required)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package: D2PAK (TO-263-3) or equivalent surface mount package
Operating Temperature Range: -55°C to 175°C minimum
Mounting Type: Surface Mount

Performance Parameters (allowable variation):

Continuous Drain Current (Id): Substitute parts rated at 120A or higher satisfy applications requiring up to 195A operation, with thermal management considerations
On-Resistance (Rds On): Substitute parts with Rds On values between 2.1 mOhm and 2.8 mOhm maintain comparable performance characteristics
Power Dissipation: Substitute parts rated 188W or higher accommodate thermal requirements
Gate Charge (Qg): Variation between 92 nC and 226 nC is acceptable for switching applications

Compliance Parameters:

RoHS3 Compliance: Required
Moisture Sensitivity Level (MSL): 1 (Unlimited) preferred
Operating Status: Active or Last Time Buy status preferred over obsolete

Substitute parts are grouped into two categories: MFR Recommended substitutes (Infineon OptiMOS™ and Nexperia TrenchMOS™ series) and Direct Manufacturer alternatives (STMicroelectronics, onsemi, and Vishay Siliconix).

Parameter Comparison

Parameter	AUIRLS3036	IPB120N06S402ATMA2	STH260N6F6-2	BUK762R6-60E,118	BUK962R8-60E,118	FDB024N06	SUM50020EL-GE3
Manufacturer	Infineon	Infineon	STMicroelectronics	Nexperia	Nexperia	onsemi	Vishay Siliconix
Vdss (V)	60	60	60	60	60	60	60
Id @ 25°C (A)	195	120	180	120	120	120	120
Rds On Max (mOhm)	2.4 @ 165A, 10V	2.8 @ 100A, 10V	2.4 @ 60A, 10V	2.6 @ 25A, 10V	2.5 @ 25A, 10V	2.4 @ 75A, 10V	2.1 @ 30A, 10V
Vgs(th) Max (V)	2.5 @ 250µA	4.0 @ 140µA	4.0 @ 250µA	4.0 @ 1mA	2.1 @ 1mA	4.5 @ 250µA	2.5 @ 250µA
Qg Max (nC)	140 @ 4.5V	195 @ 10V	183 @ 10V	140 @ 10V	92 @ 5V	226 @ 10V	126 @ 10V
Power Dissipation Max (W)	380	188	300	324	324	395	375
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	PG-TO263-3-2	H2PAK-2	D2PAK	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Active	Obsolete	Last Time Buy	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes	Yes
AEC-Q101 Qualification	No	Yes	No	Yes	Yes	No	No

Engineering Selection Recommendations

Primary Recommendation: IPB120N06S402ATMA2 (Infineon OptiMOS™)

The IPB120N06S402ATMA2 is the MFR recommended substitute from Infineon Technologies. This part maintains the same 60V Vdss rating and D2PAK package footprint. The device is in active production status with AEC-Q101 automotive qualification. While the continuous drain current is rated at 120A compared to the original 195A, the on-resistance of 2.8 mOhm at 100A, 10V provides comparable performance in most applications. The higher gate charge (195 nC) and input capacitance (15750 pF) require evaluation for switching frequency compatibility. This substitute is suitable for designs where the 120A rating meets application requirements.

Secondary Recommendation: STH260N6F6-2 (STMicroelectronics DeepGATE™/STripFET™ VI)

The STH260N6F6-2 offers the highest continuous drain current among substitutes at 180A, closest to the original 195A specification. This part is in active production with 33,400 units in stock. The H2PAK-2 package is mechanically compatible with D2PAK footprints. On-resistance of 2.4 mOhm at 60A, 10V matches the original specification. Power dissipation of 300W is lower than the original 380W, requiring thermal analysis for high-power applications. Gate charge of 183 nC at 10V is moderate among available options.

Tertiary Recommendation: SUM50020EL-GE3 (Vishay Siliconix TrenchFET®)

The SUM50020EL-GE3 provides the lowest on-resistance at 2.1 mOhm at 30A, 10V, offering superior switching efficiency. This part is in active production with 1,133 units in stock. The 120A continuous drain current and 375W power dissipation are comparable to other 120A substitutes. Gate charge of 126 nC at 10V is the lowest among substitutes, enabling faster switching transitions. This part is suitable for efficiency-critical applications where lower on-resistance provides thermal benefits.

Alternative Options: BUK762R6-60E,118 and FDB024N06

BUK762R6-60E,118 (Nexperia TrenchMOS™) is in active production with AEC-Q101 qualification and 5,583 units in stock. FDB024N06 (onsemi PowerTrench®) is in Last Time Buy status with 2,507 units available. Both parts offer 120A continuous drain current and D2PAK packaging. These options are suitable for applications where Nexperia or onsemi device ecosystems are preferred.

Obsolete Alternative: BUK962R8-60E,118

The BUK962R8-60E,118 is classified as obsolete with only 997 units in stock. While this part offers comparable electrical characteristics (120A, 2.5 mOhm Rds On, 92 nC gate charge), its obsolete status and limited inventory make it unsuitable for new designs or long-term production support.

Frequently Asked Questions (FAQ)

Q: Can the IPB120N06S402ATMA2 directly replace the AUIRLS3036 in all applications?

A: The IPB120N06S402ATMA2 is electrically compatible for applications requiring up to 120A continuous drain current at 60V. Applications designed for the full 195A rating of the AUIRLS3036 require thermal and current distribution analysis. The IPB120N06S402ATMA2 maintains the same 60V Vdss, D2PAK package, and -55°C to 175°C operating temperature range. Gate charge and input capacitance differences may affect switching frequency performance and require circuit evaluation.

Q: What is the difference between D2PAK and H2PAK-2 packages?

A: Both D2PAK and H2PAK-2 are surface mount packages in the TO-263 family with identical pin configurations (2 leads plus tab). The H2PAK-2 designation indicates a variant with enhanced thermal characteristics. Mechanical footprints are compatible for PCB layout purposes. Thermal performance may differ due to internal die and substrate design variations.

Q: Why does the STH260N6F6-2 have lower power dissipation (300W) than the AUIRLS3036 (380W)?

A: Power dissipation ratings reflect the maximum thermal power the device can safely dissipate under specified conditions (typically at Tc = 25°C with defined thermal resistance). Lower power dissipation ratings do not indicate inferior performance but rather different thermal design parameters. The STH260N6F6-2 achieves comparable on-resistance (2.4 mOhm) with optimized die design, resulting in lower junction temperature rise at equivalent current levels.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are RoHS3 compliant. The AUIRLS3036 is also RoHS3 compliant. All parts maintain MSL 1 (Unlimited) moisture sensitivity level, indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part has the fastest switching characteristics?

A: The SUM50020EL-GE3 has the lowest gate charge (126 nC at 10V) and the lowest on-resistance (2.1 mOhm at 30A, 10V), enabling the fastest switching transitions and highest efficiency. The BUK962R8-60E,118 has the lowest gate charge at 92 nC but is obsolete. For active production designs, the SUM50020EL-GE3 is the optimal choice for switching speed and efficiency.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 is an automotive qualification standard for discrete semiconductors. Parts with AEC-Q101 qualification (IPB120N06S402ATMA2, BUK762R6-60E,118, BUK962R8-60E,118) have undergone rigorous testing for automotive applications including temperature cycling, electrostatic discharge, and reliability verification. This qualification is required for automotive designs but optional for industrial or consumer applications.

Q: Can I use a 120A rated substitute in a 195A application?

A: Using a 120A rated substitute in a 195A application requires thermal analysis and current distribution design. The substitute part will reach higher junction temperatures at equivalent current levels. Applications must be redesigned to operate within the 120A continuous drain current limit, or parallel devices must be implemented with proper current sharing circuitry. Thermal management and PCB layout become critical design factors.

Q: Why is the AUIRLS3036 classified as obsolete?

A: The AUIRLS3036 is obsolete due to product lifecycle management by Infineon Technologies. Newer MOSFET designs with improved performance characteristics, lower on-resistance, and better thermal efficiency have replaced this device in the product portfolio. The substitute parts listed represent current-generation alternatives with active production status and ongoing manufacturer support.

Q: Are there any gate drive voltage differences between substitutes?

A: Yes, gate drive voltage specifications vary among substitutes. The AUIRLS3036 specifies 4.5V and 10V drive voltages. Substitutes specify either 4.5V/10V (SUM50020EL-GE3) or 10V only (IPB120N06S402ATMA2, STH260N6F6-2, BUK762R6-60E,118, FDB024N06). The BUK962R8-60E,118 specifies 5V drive voltage. Gate drive circuits must be verified to ensure compatibility with the selected substitute part's Vgs(th) and gate charge specifications.

Q: What inventory status should I consider for production planning?

A: For immediate availability, STH260N6F6-2 has the highest inventory (33,400 units), followed by IPB120N06S402ATMA2 (3,497 units) and BUK762R6-60E,118 (5,583 units). FDB024N06 is in Last Time Buy status with 2,507 units available, indicating limited future availability. BUK962R8-60E,118 is obsolete with only 997 units remaining. For long-term production support, active status parts (STH260N6F6-2, IPB120N06S402ATMA2, BUK762R6-60E,118, SUM50020EL-GE3) are recommended.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message