AUIRLR3705Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLR3705Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 42A continuous drain current in a Surface Mount TO-252AA (DPAK) package. This device is classified as Obsolete, making substitute parts necessary for new designs and production continuity. The HEXFET® series component operates across a temperature range of -55°C to 175°C and dissipates up to 130W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	42	A (Tc)
On-Resistance (Rds On) @ 42A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution for the AUIRLR3705Z is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥55V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥42A to support application current requirements
On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Package Type: TO-252-3 (DPAK) form factor for mechanical compatibility
Operating Temperature Range: Must support -55°C to 175°C
RoHS Compliance: ROHS3 Compliant status required

Substitute Categories:

Category 1: Direct Voltage/Current Equivalents (55V, ≥42A) Parts with matching 55V rating and equal or higher current ratings maintain direct functional equivalence.

Category 2: Elevated Voltage Ratings (60V, ≥42A) Parts rated at 60V provide additional voltage margin while maintaining or exceeding current specifications. These are suitable where voltage headroom is beneficial.

Category 3: Enhanced Current Capability (55V, >42A) Parts with higher current ratings at the same voltage provide thermal margin and reduced on-resistance benefits.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Power Dissipation (W)	Package	Status
AUIRLR3705Z	Infineon	55	42	8	130	TO-252-3 (DPAK)	Obsolete
IPD50N06S4L08ATMA1	Infineon	60	50	7.8	71	TO-252-3 (DPAK)	Discontinued
IPD50N06S4L08ATMA2	Infineon	60	50	7.8	71	TO-252-3 (DPAK)	Active
STD65N55F3	STMicroelectronics	55	80	8.5	110	TO-252-3 (DPAK)	Active
AOD2610E	Alpha & Omega Semiconductor	60	46	9.5	59.5	TO-252-3 (DPAK)	Active

Engineering Selection Recommendations

IPD50N06S4L08ATMA2 (Infineon Technologies)

This part is the primary recommended substitute. It maintains Infineon MOSFET technology continuity and is currently Active with AEC-Q101 automotive qualification. The 60V rating provides voltage margin above the original 55V specification. Current capability of 50A exceeds the 42A requirement. The part is available in high volume (7967 Pcs in stock) with Tape & Reel packaging. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original specification.

STD65N55F3 (STMicroelectronics)

This part maintains the exact 55V voltage rating with significantly enhanced current capability (80A versus 42A), providing substantial thermal margin. The STripFET™ series technology delivers equivalent on-resistance performance. Active product status with 15165 Pcs in stock ensures supply continuity. ROHS3 compliance and MSL 1 rating are maintained. This option is suitable for applications requiring maximum current headroom.

AOD2610E (Alpha & Omega Semiconductor Inc.)

This part provides 60V voltage rating with 46A current capability, closely matching the original 42A specification. The AlphaSGT™ series offers lower gate charge (25 nC) compared to the original (66 nC), reducing drive circuit requirements. Active status with 200400 Pcs in stock provides excellent availability. ROHS3 compliance is maintained. Operating temperature range extends to 150°C (versus 175°C original), which is suitable for most applications.

IPD50N06S4L08ATMA1 (Infineon Technologies)

This part is electrically equivalent to IPD50N06S4L08ATMA2 but carries Discontinued status at DiGi Electronics. Selection of this part should be avoided in favor of the Active IPD50N06S4L08ATMA2 variant.

Frequently Asked Questions (FAQ)

Q: Can I use a 60V rated MOSFET in place of the 55V AUIRLR3705Z?

A: Yes. A 60V rated device provides additional voltage margin and is suitable for direct substitution provided all other parameters (current, package, temperature range) are met or exceeded. The higher voltage rating does not degrade performance in 55V applications.

Q: What is the significance of the on-resistance (Rds On) value in substitution?

A: On-resistance directly affects power dissipation and thermal performance. Lower or equivalent Rds On values reduce heat generation. The AUIRLR3705Z specifies 8 mOhm at 42A, 10V. Substitute parts with 7.8 mOhm or 8.5 mOhm are acceptable; higher values may increase thermal stress.

Q: Are all substitute parts available in the same TO-252-3 (DPAK) package?

A: Yes. All listed substitute parts use the TO-252-3 (DPAK) package designation, ensuring mechanical and thermal compatibility with the original AUIRLR3705Z footprint.

Q: Why is IPD50N06S4L08ATMA2 recommended over IPD50N06S4L08ATMA1?

A: IPD50N06S4L08ATMA2 carries Active product status, while IPD50N06S4L08ATMA1 is Discontinued at DiGi Electronics. Both are electrically identical, but the Active variant ensures long-term supply availability and support.

Q: Does the substitute part need to support the full -55°C to 175°C temperature range?

A: Yes. All listed substitute parts maintain the -55°C to 175°C operating temperature range, ensuring compatibility with the original specification.

Q: What is AEC-Q101 qualification and why does it matter?

A: AEC-Q101 is an automotive qualification standard. IPD50N06S4L08ATMA2 carries this qualification, making it suitable for automotive applications. Other substitutes without this marking are suitable for industrial and consumer applications.

Q: How does gate charge (Qg) affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET. The AUIRLR3705Z specifies 66 nC at 5V. AOD2610E has lower gate charge (25 nC at 10V), potentially reducing drive circuit power consumption. This is a secondary consideration for substitution but may provide design benefits.

Q: Is RoHS3 compliance maintained across all substitute parts?

A: Yes. All listed substitute parts are ROHS3 Compliant, matching the original AUIRLR3705Z specification.

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