AUIRLR3110Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLR3110Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 42A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and is part of the HEXFET® series. The AUIRLR3110Z is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package specifications while offering active product status and ongoing manufacturer support.

Substiute Parts

AUIRLR3110Z

Infineon TechnologiesIn Stock: 1120AUIRLR3110Z Datasheet

Current PartRFQ

IPD60N10S4L12ATMA1

Infineon TechnologiesIn Stock: 5114IPD60N10S4L12ATMA1 Datasheet

MFR RecommendedRFQ

STD45N10F7

STMicroelectronicsIn Stock: 8078STD45N10F7 Datasheet

DirectRFQ

STD80N10F7

STMicroelectronicsIn Stock: 27706STD80N10F7 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the AUIRLR3110Z are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 100V minimum
• Package Type: TO-252-3 (DPAK) surface mount configuration
• FET Type: N-Channel MOSFET
• Operating Temperature Range: -55°C to 175°C minimum
• RoHS3 Compliance and MSL Level 1 rating

Performance Compatibility Parameters:

• Continuous Drain Current (Id): Equal to or greater than 42A
• On-Resistance (Rds On): Equal to or lower than 14 mOhm at rated conditions
• Gate Threshold Voltage: Compatible gate drive requirements
• Power Dissipation: Thermal capability sufficient for application requirements

The three substitute parts identified—IPD60N10S4L12ATMA1, STD45N10F7, and STD80N10F7—meet all critical matching parameters and offer active product status with full manufacturer support. Each substitute provides distinct performance characteristics suitable for different application requirements within the 100V, N-Channel MOSFET category.

Parameter Comparison

Engineering Selection Recommendations

IPD60N10S4L12ATMA1 (Infineon Technologies)

The IPD60N10S4L12ATMA1 is an active Infineon HEXFET® product with AEC-Q101 automotive qualification. This part offers 60A continuous drain current, exceeding the AUIRLR3110Z specification by 43%. The on-resistance of 12 mOhm at 60A, 10V is superior to the main part's 14 mOhm specification. Gate threshold voltage is lower at 2.1V, enabling more efficient gate drive circuits. Power dissipation is rated at 94W, lower than the main part due to improved on-resistance characteristics. This substitute is suitable for applications requiring higher current capacity with maintained thermal performance. Automotive qualification and active product status provide long-term supply assurance.

STD45N10F7 (STMicroelectronics)

The STD45N10F7 is an active STMicroelectronics DeepGATE™ and STripFET™ VII series product. This part provides 45A continuous drain current, marginally exceeding the AUIRLR3110Z at 42A. On-resistance is 18 mOhm at 22.5A, 10V, representing a trade-off in conduction losses. Gate threshold voltage is higher at 4.5V, requiring higher gate drive voltage. Gate charge is significantly lower at 25 nC, reducing switching losses and gate drive power requirements. Input capacitance is substantially lower at 1640 pF, improving switching speed characteristics. Power dissipation is 60W, reflecting lower thermal capability. This substitute is appropriate for applications prioritizing switching efficiency and gate drive simplicity over conduction performance.

STD80N10F7 (STMicroelectronics)

The STD80N10F7 is an active STMicroelectronics DeepGATE™ and STripFET™ VII series product offering the highest current rating at 70A continuous drain current. On-resistance is 10 mOhm at 40A, 10V, the lowest among all substitutes, providing superior conduction efficiency. Gate threshold voltage is 4.5V, consistent with the STD45N10F7. Gate charge is 45 nC at 10V, moderate among the substitutes. Input capacitance is 3100 pF, comparable to the main part. Power dissipation is 85W, providing balanced thermal performance. This substitute is optimal for applications requiring maximum current handling capacity and minimum conduction losses within the 100V MOSFET category.

All three substitutes maintain full compliance with RoHS3, REACH, and MSL Level 1 requirements. Selection between substitutes depends on application-specific priorities: current capacity, conduction efficiency, switching performance, or thermal management requirements.

Frequently Asked Questions (FAQ)

Q: Can the IPD60N10S4L12ATMA1 directly replace the AUIRLR3110Z in existing designs?

A: The IPD60N10S4L12ATMA1 is electrically compatible as a direct replacement. Both devices share identical 100V Vdss rating, TO-252-3 (DPAK) package configuration, and -55°C to 175°C operating temperature range. The IPD60N10S4L12ATMA1 provides higher current capacity (60A vs. 42A) and lower on-resistance (12 mOhm vs. 14 mOhm), making it a performance upgrade. Gate threshold voltage is lower (2.1V vs. 2.5V), which may require gate drive circuit evaluation for optimal performance. Thermal design should account for the lower power dissipation rating (94W vs. 140W).

Q: What are the key differences between the STMicroelectronics substitutes (STD45N10F7 and STD80N10F7)?

A: Both STMicroelectronics parts are from the same DeepGATE™ and STripFET™ VII series with identical 100V Vdss rating and TO-252-3 (DPAK) packaging. The primary differences are current capacity and on-resistance: STD45N10F7 provides 45A at 18 mOhm, while STD80N10F7 provides 70A at 10 mOhm. Gate threshold voltage is identical at 4.5V for both parts. STD80N10F7 offers superior conduction efficiency and higher current handling, while STD45N10F7 provides a closer current match to the original AUIRLR3110Z specification.

Q: Are all substitute parts available in the same packaging as the AUIRLR3110Z?

A: Yes. All three substitute parts are packaged in TO-252-3 (DPAK) surface mount configuration, identical to the AUIRLR3110Z. This ensures mechanical compatibility with existing PCB layouts and assembly processes. The IPD60N10S4L12ATMA1 is supplied in Cut Tape (CT) and Digi-Reel® packaging, while STD45N10F7 and STD80N10F7 are supplied in Cut Tape (CT) and Digi-Reel® packaging. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity rating.

Q: How do gate threshold voltage differences affect circuit design?

A: The AUIRLR3110Z has a gate threshold voltage of 2.5V at 100µA, while the IPD60N10S4L12ATMA1 is 2.1V at 46µA, and both STMicroelectronics parts are 4.5V at 250µA. Lower threshold voltages (Infineon parts) enable operation with lower gate drive voltages and reduced gate drive power consumption. Higher threshold voltages (STMicroelectronics parts) require higher gate drive voltage levels but provide improved noise immunity. Gate drive circuits must be evaluated to ensure adequate voltage margin above the threshold voltage for reliable switching operation.

Q: What is the significance of on-resistance (Rds On) differences among the substitutes?

A: On-resistance directly affects conduction losses and thermal performance. The AUIRLR3110Z specifies 14 mOhm at 38A, 10V. The IPD60N10S4L12ATMA1 provides 12 mOhm at 60A, 10V (lower losses), STD45N10F7 provides 18 mOhm at 22.5A, 10V (higher losses), and STD80N10F7 provides 10 mOhm at 40A, 10V (lowest losses). Lower on-resistance reduces I²R losses and heat generation, improving efficiency and reducing thermal management requirements. Applications with high current or continuous operation benefit from lower on-resistance specifications.

Q: Are all substitute parts suitable for automotive applications?

A: The IPD60N10S4L12ATMA1 carries AEC-Q101 automotive qualification, making it suitable for automotive applications. The STD45N10F7 and STD80N10F7 do not carry explicit automotive qualification in the provided specifications. For automotive applications, the IPD60N10S4L12ATMA1 is the recommended substitute. For non-automotive industrial and consumer applications, all three substitutes are suitable based on RoHS3 compliance and REACH status.

Q: How do gate charge differences impact switching performance?

A: Gate charge (Qg) determines the energy required to switch the device and affects switching speed. The AUIRLR3110Z specifies 48 nC at 4.5V, IPD60N10S4L12ATMA1 specifies 49 nC at 10V, STD45N10F7 specifies 25 nC at 10V, and STD80N10F7 specifies 45 nC at 10V. Lower gate charge (STD45N10F7 at 25 nC) reduces gate drive power consumption and enables faster switching transitions. Higher gate charge requires more gate drive current but may provide improved switching stability. Gate drive circuit design must accommodate the specific gate charge and drive voltage requirements of the selected substitute.

Q: What product status considerations apply to substitute selection?

A: The AUIRLR3110Z is classified as obsolete, indicating discontinued production and limited future availability. All three substitute parts are classified as active products with ongoing manufacturer support and production. Active product status ensures long-term supply availability, continued technical support, and compatibility with current manufacturing processes. Selection of active substitutes eliminates supply chain risk associated with obsolete components.