AUIRLL024N N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRLL024N is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 3.1A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The AUIRLL024N belongs to the HEXFET® series and is designed for applications requiring low on-resistance switching performance in compact surface mount form factors. Due to its obsolete status, active alternative components with compatible electrical and mechanical specifications are required for new designs and production continuity.

Substiute Parts

AUIRLL024N
Infineon TechnologiesIn Stock: 11693AUIRLL024N Datasheet
AUIRLL024N
Current Part
NVF3055L108T1G
onsemiIn Stock: 3111NVF3055L108T1G Datasheet
NVF3055L108T1G
MFR Recommended
STN4NF06L
STMicroelectronicsIn Stock: 3335STN4NF06L Datasheet
STN4NF06L
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 3.1 A
Rds On (Max) @ 10V, 3.1A 65 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Power Dissipation (Max) 1 W
Operating Temperature Range -55 to 150 °C
Package Type SOT-223 (TO-261-4, TO-261AA)
Mounting Type Surface Mount
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the AUIRLL024N is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • FET Type: N-Channel topology must be maintained
  • Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 55V rating
  • Continuous Drain Current (Id): Substitute must support minimum 3.1A at 25°C
  • On-Resistance (Rds On): Substitute performance at specified gate voltage and current
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with existing drive circuitry
  • Power Dissipation: Thermal capability must meet or exceed application requirements

Mechanical Compatibility Requirements:

  • Package Type: SOT-223 (TO-261-4, TO-261AA) form factor
  • Mounting Type: Surface mount configuration
  • Moisture Sensitivity Level: MSL 1 (Unlimited) classification

The substitute parts listed below meet these criteria within the allowed parameter ranges specified for this product category.

Parameter Comparison

Parameter AUIRLL024N (Main) NVF3055L108T1G STN4NF06L Unit
Manufacturer Infineon Technologies onsemi STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Vdss 55 60 60 V
Id @ 25°C 3.1 3 4 A
Rds On (Max) 65 @ 3.1A, 10V 120 @ 1.5A, 5V 100 @ 1.5A, 10V mOhm
Vgs(th) (Max) @ 250µA 2 2 2.8 V
Gate Charge (Qg) @ 5V 15.6 15 9 nC
Input Capacitance (Ciss) @ 25V 510 440 340 pF
Power Dissipation (Max) 1 1.3 3.3 W
Operating Temperature Range -55 to 150 -55 to 175 -55 to 150 °C
Package SOT-223 SOT-223 SOT-223
Vgs (Max) ±16 ±15 ±16 V
Moisture Sensitivity Level 1 1 1
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

NVF3055L108T1G (onsemi)

This substitute is an active product with AEC-Q101 automotive qualification. The device provides 60V Vdss rating, exceeding the 55V requirement of the AUIRLL024N. Continuous drain current is rated at 3A, which is within 3% of the original specification. The NVF3055L108T1G features ROHS3 compliance and extended operating temperature range to 175°C. This part is suitable for applications requiring automotive-grade reliability and compliance certifications.

STN4NF06L (STMicroelectronics)

This substitute is an active product from the STripFET™ II series with ROHS3 compliance. The device provides 60V Vdss rating and 4A continuous drain current, exceeding the original AUIRLL024N specifications. The STN4NF06L offers superior power dissipation capability at 3.3W and lower gate charge at 9nC, resulting in improved switching efficiency. Operating temperature range matches the original at -55°C to 150°C. This part is suitable for applications where enhanced thermal performance and switching speed are beneficial.

Both substitute parts maintain SOT-223 package compatibility, MSL 1 moisture sensitivity classification, and N-Channel topology. Selection between these alternatives depends on specific application requirements regarding thermal management, automotive qualification, and drive circuit characteristics.

Frequently Asked Questions (FAQ)

Q: Can the NVF3055L108T1G directly replace the AUIRLL024N in existing designs?

A: The NVF3055L108T1G is mechanically and electrically compatible as a substitute. Both devices use SOT-223 packaging with identical pinout. The NVF3055L108T1G provides higher voltage rating (60V vs. 55V) and comparable current handling (3A vs. 3.1A). Gate threshold voltage and maximum gate voltage specifications are compatible with standard drive circuits. Verification of thermal performance in the specific application is necessary due to different power dissipation ratings.

Q: What are the key differences between the two substitute parts?

A: The STN4NF06L provides higher continuous drain current (4A vs. 3A) and significantly higher power dissipation capability (3.3W vs. 1.3W). The STN4NF06L also features lower gate charge (9nC vs. 15nC), enabling faster switching transitions. The NVF3055L108T1G includes AEC-Q101 automotive qualification, making it suitable for automotive applications. Both parts maintain SOT-223 compatibility and ROHS3 compliance.

Q: Are there any gate drive voltage considerations when substituting?

A: The AUIRLL024N specifies maximum gate voltage of ±16V. The NVF3055L108T1G is rated for ±15V maximum gate voltage, which is 1V lower. The STN4NF06L maintains ±16V rating. Existing gate drive circuits designed for ±16V operation must be verified for compatibility with the NVF3055L108T1G. Gate threshold voltages differ slightly: AUIRLL024N at 2V, NVF3055L108T1G at 2V, and STN4NF06L at 2.8V maximum.

Q: How do on-resistance specifications compare across these parts?

A: The AUIRLL024N specifies 65mOhm maximum at 3.1A and 10V gate voltage. The NVF3055L108T1G specifies 120mOhm at 1.5A and 5V gate voltage, measured under different conditions. The STN4NF06L specifies 100mOhm at 1.5A and 10V gate voltage. Direct comparison requires evaluation at identical test conditions. Lower on-resistance generally reduces power dissipation in switching applications.

Q: What is the significance of the different power dissipation ratings?

A: The AUIRLL024N is rated for 1W maximum power dissipation. The NVF3055L108T1G provides 1.3W capability, and the STN4NF06L provides 3.3W capability. Higher power dissipation ratings indicate greater thermal capacity. Applications with continuous high-current operation or high switching frequency may benefit from the enhanced thermal performance of the STN4NF06L. Thermal management design must account for the specific power dissipation characteristics of the selected substitute.

Q: Are all three parts available in the same package configuration?

A: Yes. The AUIRLL024N, NVF3055L108T1G, and STN4NF06L are all available in SOT-223 package (TO-261-4, TO-261AA) configuration. Pinout compatibility is maintained across all three devices, enabling direct mechanical substitution on existing printed circuit boards. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, indicating identical handling and storage requirements.

Q: What compliance certifications should be considered for substitution?

A: The AUIRLL024N is obsolete with no active compliance status specified. The NVF3055L108T1G is ROHS3 compliant and AEC-Q101 qualified for automotive applications. The STN4NF06L is ROHS3 compliant. Both substitute parts are REACH unaffected and classified as EAR99 for export control purposes. Applications requiring automotive qualification should specify the NVF3055L108T1G. All parts meet HTSUS classification 8541.29.0095.

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