AUIRL3705Z N-Channel 55V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRL3705Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On Max) @ 52A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 5V	60	nC
Power Dissipation (Max)	130	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the AUIRL3705Z is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 55V minimum
Continuous Drain Current (Id): 75A minimum at 25°C
On-State Resistance (Rds On): 8mOhm or lower at specified gate voltage
Package Type: TO-220 or TO-220AB through-hole configuration
Gate Threshold Voltage (Vgs(th)): Compatible with 3V to 4V range
Operating Temperature Range: -55°C to 175°C minimum

Substitute Categories:

Category 1 - Parametric Equivalent (Identical Electrical Specifications): IRL3705ZPBF matches all electrical parameters identically to the AUIRL3705Z, including Vdss (55V), Id (75A), Rds On (8mOhm @ 52A, 10V), and power dissipation (130W). This part is manufactured by International Rectifier and maintains active product status.

Category 2 - Enhanced Performance Substitutes (Higher Power Dissipation): HUF75344P3 and HUF75345P3 (onsemi UltraFET™ series) exceed the electrical requirements with improved power dissipation ratings (285W and 325W respectively) while maintaining 55V/75A core specifications. These parts feature lower on-state resistance (HUF75345P3 at 7mOhm) and higher gate voltage tolerance (±20V).

Category 3 - Voltage/Current Trade-off Substitutes: STP76NF75 (STMicroelectronics) provides higher voltage rating (75V) and current capability (80A) with 300W power dissipation, suitable for applications requiring additional voltage margin. STP80NF55-06 maintains the 55V rating with 80A current and 6.5mOhm Rds On, offering improved current handling.

Category 4 - Reduced Performance Substitute: STP60NF06L (STMicroelectronics) operates at 60V/60A with lower power dissipation (110W) and higher on-state resistance (14mOhm @ 30A, 10V). This part is suitable only for applications with reduced current requirements below 60A.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss (W)	Package	Status
AUIRL3705Z	Infineon	55	75	8	3	60	130	TO-220AB	Obsolete
IRL3705ZPBF	International Rectifier	55	75	8	3	60	130	TO-220AB	Active
HUF75344P3	onsemi	55	75	8	4	210	285	TO-220-3	Active
HUF75345P3	onsemi	55	75	7	4	275	325	TO-220-3	Active
STP76NF75	STMicroelectronics	75	80	11	4	160	300	TO-220	Active
STP80NF55-06	STMicroelectronics	55	80	6.5	4	189	300	TO-220	Active
STP60NF06L	STMicroelectronics	60	60	14	1	66	110	TO-220	Active

Engineering Selection Recommendations

First Priority - Direct Equivalent: IRL3705ZPBF is the recommended primary substitute. This part maintains identical electrical specifications to the AUIRL3705Z across all critical parameters (55V, 75A, 8mOhm Rds On, 130W power dissipation) and is manufactured by International Rectifier with active product status. Packaging is TO-220AB, matching the original design. This selection requires no circuit modifications and provides direct pin-compatible replacement.

Second Priority - Enhanced Performance Alternatives: HUF75344P3 and HUF75345P3 (onsemi) are suitable for applications where improved thermal performance is beneficial. Both maintain 55V/75A specifications with significantly higher power dissipation ratings (285W and 325W). HUF75345P3 offers the lowest on-state resistance (7mOhm) among all substitutes. Both parts carry ROHS3 compliance and active product status. Package designation is TO-220-3, which is mechanically and electrically compatible with TO-220AB in through-hole applications.

Third Priority - Higher Voltage/Current Margin: STP80NF55-06 (STMicroelectronics) provides enhanced current capability (80A vs. 75A) while maintaining the 55V rating and achieving superior on-state resistance (6.5mOhm). This part is suitable for designs requiring additional current headroom and improved efficiency. Active product status and ROHS3 compliance are confirmed.

Not Recommended for Direct Substitution: STP60NF06L exhibits reduced current rating (60A) and significantly higher on-state resistance (14mOhm), making it unsuitable for applications requiring the full 75A specification. This part is appropriate only for downgraded designs with lower current demands.

STP76NF75 operates at elevated voltage (75V) with higher on-state resistance (11mOhm), introducing unnecessary design complexity for applications designed around 55V operation.

Frequently Asked Questions (FAQ)

Q1: Can IRL3705ZPBF be used as a direct replacement for AUIRL3705Z without circuit modifications?

A: Yes. IRL3705ZPBF is a parametric equivalent with identical Vdss (55V), Id (75A), Rds On (8mOhm), and power dissipation (130W). The TO-220AB package is pin-compatible. No circuit modifications are required.

Q2: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with three leads (Gate, Drain, Source) and are mechanically and electrically compatible for PCB mounting. TO-220AB and TO-220-3 designations refer to the same physical package configuration used by different manufacturers.

Q3: Why do HUF75344P3 and HUF75345P3 have higher gate charge (Qg) values?

A: Higher gate charge reflects the UltraFET™ technology platform used by onsemi, which provides improved thermal performance and lower on-state resistance at the cost of increased gate charge. This requires slightly higher gate drive current but does not affect substitution compatibility in standard applications.

Q4: Is STP60NF06L suitable as a substitute if my application uses less than 60A?

A: STP60NF06L can function in applications with continuous drain current below 60A. However, its significantly higher on-state resistance (14mOhm vs. 8mOhm) results in higher power dissipation and heat generation compared to the original AUIRL3705Z specification. Selection should be based on thermal budget requirements.

Q5: What compliance certifications apply to all substitute parts?

A: All active substitute parts listed (IRL3705ZPBF, HUF75344P3, HUF75345P3, STP76NF75, STP80NF55-06, STP60NF06L) carry ROHS3 compliance and REACH Unaffected status. ECCN classification is EAR99 for all parts.

Q6: Can STP76NF75 be used in a circuit designed for 55V operation?

A: STP76NF75 is rated for 75V operation and can be used in 55V circuits. The higher voltage rating provides additional safety margin. However, its higher on-state resistance (11mOhm vs. 8mOhm) and increased gate charge (160nC vs. 60nC) may affect circuit performance and thermal characteristics compared to the original specification.

Q7: Which substitute offers the best thermal performance?

A: HUF75345P3 provides the highest power dissipation rating (325W) and lowest on-state resistance (7mOhm), resulting in superior thermal performance and efficiency. This part is recommended for applications with stringent thermal requirements or high-frequency switching operations.

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