AUIRFSL4010 Equivalent & Substitute Parts

Part Overview

The AUIRFSL4010 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 180A continuous drain current in a through-hole TO-262 package. Manufactured by Infineon Technologies as part of the HEXFET® series, this device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Applications requiring this performance class necessitate evaluation of active alternative components that maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

AUIRFSL4010

Infineon TechnologiesIn Stock: 831AUIRFSL4010 Datasheet

Current PartRFQ

STH150N10F7-2

STMicroelectronicsIn Stock: 21239STH150N10F7-2 Datasheet

DirectRFQ

FDI045N10A-F102

onsemiIn Stock: 1211FDI045N10A-F102 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AUIRFSL4010 is determined by the following electrical and mechanical criteria:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous Drain Current (Id) must support the application's current demands
• Gate Threshold Voltage (Vgs(th)) must fall within compatible drive voltage ranges
• On-State Resistance (Rds On) must not exceed acceptable power dissipation limits
• Operating temperature range must encompass -55°C to 175°C

Mechanical Compatibility Requirements:

• Package type must be compatible with existing PCB layouts and thermal management solutions
• Lead configuration must match board-level mounting specifications

The substitute parts identified maintain the 100V Vdss rating and N-Channel MOSFET technology. However, they differ in current ratings, package types, and product status, requiring evaluation based on specific application requirements and design constraints.

Parameter Comparison

Engineering Selection Recommendations

FDI045N10A-F102 (onsemi PowerTrench®): This part is recommended as the primary substitute for through-hole applications. It maintains the TO-262 package format, ensuring mechanical compatibility with existing PCB designs. The FDI045N10A-F102 carries Active product status, confirming ongoing manufacturer support and supply chain availability. Current rating of 120A is lower than the AUIRFSL4010's 180A; applications must verify that this reduced current capacity meets system requirements. On-state resistance of 4.5 mOhm at 100A is comparable to the original part. Gate charge of 74 nC is significantly lower, reducing driver power requirements. Power dissipation capability of 263W is reduced from 375W; thermal analysis is required for high-power applications. RoHS3 compliance and REACH unaffected status maintain regulatory alignment.

STH150N10F7-2 (STMicroelectronics STripFET™ VII): This part is suitable only for applications where surface-mount technology can be accommodated. The H2PAK-2 package represents a different mounting technology than the original TO-262 through-hole format, requiring PCB redesign. The STH150N10F7-2 carries Active product status with established supply availability. Continuous drain current of 110A is the lowest among alternatives, requiring verification against application current demands. On-state resistance of 3.9 mOhm at 55A provides the lowest resistance specification, beneficial for minimizing conduction losses at moderate current levels. Gate charge of 117 nC is intermediate between alternatives. Power dissipation of 250W is the lowest, limiting applicability in high-power scenarios. Surface-mount packaging offers improved thermal performance through direct PCB contact compared to through-hole designs.

Regulatory and Compliance Considerations: All three parts maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with current environmental regulations. The transition from "Not For New Designs" status to Active alternatives ensures long-term supply chain stability and manufacturer support for new applications.

Frequently Asked Questions (FAQ)

Q: Can the FDI045N10A-F102 directly replace the AUIRFSL4010 in existing designs?

A: The FDI045N10A-F102 maintains the same TO-262 through-hole package and 100V Vdss rating, enabling direct PCB-level replacement. However, the reduced continuous drain current (120A versus 180A) requires verification that application current demands do not exceed this limit. On-state resistance and gate charge characteristics differ; thermal and switching performance must be validated for the specific application.

Q: Why does the STH150N10F7-2 have a different package type?

A: The STH150N10F7-2 uses the H2PAK-2 surface-mount package rather than the through-hole TO-262 format. This represents a different manufacturing technology and PCB integration approach. Surface-mount packages typically offer superior thermal performance but require PCB redesign and different assembly processes. This part is not suitable for direct board-level substitution without layout modifications.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The AUIRFSL4010 requires 215 nC, while the FDI045N10A-F102 requires only 74 nC. Lower gate charge reduces driver power dissipation and enables faster switching transitions. Applications with current-limited gate drivers may benefit from the lower gate charge of the onsemi part. Conversely, applications with robust gate drivers may not experience practical differences.

Q: How do power dissipation ratings affect part selection?

A: Power dissipation (Ptot) represents the maximum thermal energy the device can safely dissipate. The AUIRFSL4010 is rated for 375W, while substitutes are rated for 250-263W. In high-current, continuous-operation scenarios, the reduced power dissipation of alternatives may require enhanced thermal management (larger heatsinks, improved airflow) to maintain junction temperature within the -55°C to 175°C operating range. Applications operating at lower current levels or with intermittent duty cycles may not be affected.

Q: Are all three parts suitable for new design implementations?

A: The AUIRFSL4010 is designated "Not For New Designs" and should not be selected for new applications. Both the FDI045N10A-F102 and STH150N10F7-2 carry Active product status, making them appropriate for new designs. Selection between these two depends on packaging requirements: through-hole (FDI045N10A-F102) or surface-mount (STH150N10F7-2).

Q: What is the impact of on-state resistance (Rds On) on circuit performance?

A: On-state resistance determines conduction losses when the MOSFET is in the on-state. Lower Rds On reduces power dissipation and heat generation. The AUIRFSL4010 specifies 4.7 mOhm at 106A, the FDI045N10A-F102 specifies 4.5 mOhm at 100A, and the STH150N10F7-2 specifies 3.9 mOhm at 55A. Direct comparison requires normalizing to the same current level; the STH150N10F7-2 exhibits the lowest resistance at its rated current, but this advantage diminishes at higher current levels where the onsemi part may perform comparably.

Q: Do all parts meet the same regulatory requirements?

A: Yes. All three parts are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations. ECCN classification (EAR99) and HTSUS codes are identical across all parts, ensuring equivalent export and tariff treatment.