AUIRFS8403 Equivalent & Substitute Parts

Part Overview

The AUIRFS8403 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with a continuous drain current of 123A at 25°C. This device is packaged in a Surface Mount TO-263-3 (D2PAK) configuration and is part of the HEXFET® series. The AUIRFS8403 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure functional equivalence in existing applications.

Substiute Parts

AUIRFS8403

Infineon TechnologiesIn Stock: 1915AUIRFS8403 Datasheet

Current PartRFQ

IPB80N04S403ATMA1

Infineon TechnologiesIn Stock: 18242IPB80N04S403ATMA1 Datasheet

MFR RecommendedRFQ

BUK964R1-40E,118

Nexperia USA Inc.In Stock: 1039BUK964R1-40E,118 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AUIRFS8403 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal 40V
• FET Type: Must be N-Channel MOSFET
• Package Type: Must be TO-263-3 or D2PAK (Surface Mount)
• Operating Temperature Range: Must support -55°C to 175°C
• RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must support minimum 123A at 25°C or provide equivalent thermal performance
• Rds On (Max): Substitute must not exceed 3.3mOhm at specified conditions to maintain electrical efficiency
• Gate Charge (Qg): Lower values indicate faster switching characteristics
• Power Dissipation: Substitute thermal rating must support application requirements

The identified substitute parts meet these criteria while accommodating variations in gate threshold voltage, input capacitance, and maximum gate voltage specifications that do not impact functional equivalence in standard applications.

Parameter Comparison

Engineering Selection Recommendations

IPB80N04S403ATMA1 (Infineon Technologies)

The IPB80N04S403ATMA1 is classified as an Active product, providing superior long-term availability compared to the obsolete AUIRFS8403. This substitute maintains identical Vdss (40V) and equivalent Rds On (3.3mOhm @ 80A, 10V) specifications. The continuous drain current rating of 80A is lower than the AUIRFS8403 (123A); however, the device operates within the same temperature range (-55°C to 175°C) and maintains ROHS3 compliance. The IPB80N04S403ATMA1 is part of the OptiMOS™ series and is supplied in Tape & Reel packaging with significantly higher inventory availability (18,154 pieces in stock). This part is suitable for applications where the 80A current rating meets design requirements.

BUK964R1-40E,118 (Nexperia USA Inc.)

The BUK964R1-40E,118 is a TrenchMOS™ series device rated for 40V Vdss with a continuous drain current of 75A at 25°C. This part maintains the same operating temperature range (-55°C to 175°C) and TO-263-3 D2PAK packaging as the AUIRFS8403. The device carries AEC-Q101 automotive qualification and ROHS3 compliance. The Rds On specification (3.5mOhm @ 25A, 10V) is marginally higher than the AUIRFS8403. The BUK964R1-40E,118 is classified as obsolete; however, it remains available with 943 pieces in stock. This part is applicable for applications requiring automotive-grade qualification or where the 75A current rating is sufficient.

Frequently Asked Questions (FAQ)

Q: Can the IPB80N04S403ATMA1 directly replace the AUIRFS8403 in all applications?

A: The IPB80N04S403ATMA1 maintains electrical compatibility in terms of Vdss (40V), Rds On (3.3mOhm), operating temperature range, and package type. However, the continuous drain current rating is 80A compared to 123A for the AUIRFS8403. Direct substitution is valid only when the application current requirements do not exceed 80A at 25°C. Circuit thermal analysis must confirm that the lower power dissipation rating (94W vs. 99W) is acceptable for the specific thermal environment.

Q: What is the significance of the different gate threshold voltages among these parts?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to initiate conduction. The AUIRFS8403 specifies 3.9V @ 100µA, the IPB80N04S403ATMA1 specifies 4.0V @ 53µA, and the BUK964R1-40E,118 specifies 2.1V @ 1mA. These variations reflect different measurement conditions and device architectures. For standard gate drive circuits operating at 10V or higher, these differences do not impact functional compatibility. Applications using marginal gate drive voltages (below 5V) require verification of switching performance.

Q: Why does the BUK964R1-40E,118 have a significantly higher power dissipation rating (182W) than the AUIRFS8403 (99W)?

A: Power dissipation rating reflects the maximum thermal power the device can dissipate under specified conditions, typically related to package thermal resistance and die size. The BUK964R1-40E,118's higher rating indicates superior thermal performance in the D2PAK package, which may provide advantages in high-power applications. However, this does not indicate higher continuous current capability; the 75A rating remains the limiting factor for this device.

Q: Are there packaging differences between these substitute parts?

A: All three parts use the TO-263-3 D2PAK Surface Mount package. The AUIRFS8403 and BUK964R1-40E,118 are supplied in standard packaging, while the IPB80N04S403ATMA1 is supplied in Tape & Reel (TR) format. Tape & Reel packaging is standard for high-volume production and automated assembly. No physical or electrical differences exist between these packaging formats; the difference is in the delivery and handling method.

Q: What is the impact of lower gate charge (Qg) in substitute parts?

A: Gate charge (Qg) represents the total charge required to switch the device from off to on state. The IPB80N04S403ATMA1 specifies 66 nC @ 10V (lower than the AUIRFS8403 at 93 nC), and the BUK964R1-40E,118 specifies 52.1 nC @ 5V. Lower gate charge enables faster switching transitions and reduces gate drive power consumption. This is a beneficial characteristic that does not compromise compatibility; applications designed for the AUIRFS8403 will experience improved switching performance with lower gate charge devices.

Q: Is the IPB80N04S403ATMA1 recommended over the BUK964R1-40E,118 for new designs?

A: The IPB80N04S403ATMA1 is classified as Active, ensuring long-term availability and continued manufacturing support. The BUK964R1-40E,118 is classified as Obsolete, indicating discontinued production. For new designs or long-term production requirements, the IPB80N04S403ATMA1 is the preferred choice. The BUK964R1-40E,118 is suitable only for legacy system support where current availability is adequate and the 75A rating meets application requirements.

Q: How do I verify that a substitute part is suitable for my specific application?

A: Verification requires comparison of three critical parameters: (1) Drain-to-Source Voltage (Vdss) must equal or exceed the application voltage; (2) Continuous Drain Current (Id) must equal or exceed the maximum sustained current in the application; (3) Operating temperature range must encompass the application's thermal environment. Additionally, confirm that gate drive voltage compatibility exists and that thermal dissipation requirements can be met with the substitute part's power rating and package thermal characteristics.