AUIRFS4610 N-Channel MOSFET 100V 73A Equivalent & Substitute Parts

Part Overview

The AUIRFS4610 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 73A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is part of the HEXFET® series. The part is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK package standard.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	73	A
On-State Resistance (Rds On) @ 44A, 10V	14	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—

Substitute Part Grouping Explanation

Substitution eligibility for the AUIRFS4610 is determined by the following criteria:

Primary Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be D2PAK (TO-263-3) surface mount
FET Type: N-Channel MOSFET technology
Gate Voltage Range (Vgs): Must accommodate ±20V maximum
Operating Temperature: Must support -55°C to 175°C range

Secondary Electrical Parameters:

Continuous Drain Current (Id): Minimum 70A at 25°C (allows slight reduction from 73A)
On-State Resistance (Rds On): Lower values indicate improved performance; values up to 15mOhm acceptable
Gate Charge (Qg): Lower values reduce switching losses; range 59–182nC acceptable
Power Dissipation: Minimum 125W; higher ratings provide thermal margin

All substitute parts listed maintain D2PAK packaging, 100V Vdss rating, and N-Channel MOSFET technology. Drain current ratings range from 68A to 80A, accommodating the 73A specification. On-state resistance values remain within acceptable engineering tolerances for direct substitution.

Parameter Comparison

Parameter	AUIRFS4610	IPB70N10S312ATMA1	IRFS4610TRLPBF	PSMN013-100BS,118	PSMN015-100B,118	STB80NF10T4
Manufacturer	Infineon	Infineon	Infineon	Nexperia	Nexperia	STMicroelectronics
Product Status	Obsolete	Active	Not For New Designs	Active	Active	Active
Vdss (V)	100	100	100	100	100	100
Id @ 25°C (A)	73	70	73	68	75	80
Rds On (mOhm)	14 @ 44A, 10V	11.3 @ 70A, 10V	14 @ 44A, 10V	13.9 @ 15A, 10V	15 @ 25A, 10V	15 @ 40A, 10V
Vgs(th) (V)	4 @ 100µA	4 @ 83µA	4 @ 100µA	4 @ 1mA	4 @ 1mA	4 @ 250µA
Qg @ 10V (nC)	140	66	140	59	90	182
Power Dissipation (W)	190	125	190	170	300	300
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Recommendation: IPB70N10S312ATMA1

The IPB70N10S312ATMA1 is the preferred substitute for the obsolete AUIRFS4610. Manufactured by Infineon Technologies, this device carries Active product status and is suitable for new designs. It maintains 100V Vdss and D2PAK packaging. The 70A continuous drain current specification is 3A lower than the original part but remains within acceptable tolerance for most applications. The IPB70N10S312ATMA1 demonstrates superior on-state resistance (11.3mOhm versus 14mOhm) and significantly lower gate charge (66nC versus 140nC), resulting in reduced switching losses and improved thermal performance. Power dissipation rating of 125W is lower than the original 190W; thermal analysis is required for high-power applications. ROHS3 compliance and MSL 1 rating match the original specification.

Secondary Recommendation: PSMN015-100B,118

The PSMN015-100B,118 manufactured by Nexperia USA Inc. is an Active product suitable for new designs. This TrenchMOS™ series device maintains 100V Vdss and D2PAK packaging. The 75A continuous drain current exceeds the original 73A specification, providing current margin. On-state resistance of 15mOhm is slightly higher than the original 14mOhm. Gate charge of 90nC is lower than the original 140nC. Power dissipation rating of 300W significantly exceeds the original 190W, providing substantial thermal margin for high-power applications. ROHS3 compliance and MSL 1 rating match the original specification.

Alternative Recommendation: STB80NF10T4

The STB80NF10T4 manufactured by STMicroelectronics is an Active product. This STripFET™ II series device maintains 100V Vdss and D2PAK packaging. The 80A continuous drain current exceeds the original 73A specification. On-state resistance of 15mOhm is slightly higher than the original 14mOhm. Gate charge of 182nC is higher than the original 140nC, resulting in increased switching losses. Power dissipation rating of 300W provides thermal margin. ROHS3 compliance and MSL 1 rating match the original specification. This device is suitable for applications where higher current capacity and thermal headroom are beneficial.

Not Recommended for New Designs: IRFS4610TRLPBF

The IRFS4610TRLPBF is electrically identical to the AUIRFS4610 but carries "Not For New Designs" product status. While this part provides exact electrical equivalence, its discontinued design status makes it unsuitable for new product development. Existing inventory of 35,100 pieces may support legacy production requirements only.

Frequently Asked Questions (FAQ)

Q: Can the IPB70N10S312ATMA1 directly replace the AUIRFS4610 in existing designs?

A: The IPB70N10S312ATMA1 is electrically compatible with the AUIRFS4610 across all critical parameters: 100V Vdss, D2PAK package, N-Channel MOSFET technology, and -55°C to 175°C operating range. The 70A continuous drain current is 3A lower than the original 73A specification. Thermal analysis is required to confirm that the 125W power dissipation rating provides adequate margin for your specific application. If the design operates near the original 73A specification, the PSMN015-100B,118 or STB80NF10T4 with higher current ratings may be more suitable.

Q: What is the significance of the lower gate charge in substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IPB70N10S312ATMA1 (66nC) and PSMN013-100BS,118 (59nC) have significantly lower gate charge than the AUIRFS4610 (140nC), improving efficiency in switching applications. The STB80NF10T4 (182nC) has higher gate charge, requiring more drive energy but remaining within acceptable engineering tolerances.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts listed are packaged in D2PAK (TO-263-3) surface mount configuration, identical to the AUIRFS4610. Pinout and thermal tab orientation are standardized across all parts. PCB layout modifications are not required for mechanical compatibility.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: Active status indicates the manufacturer supports the part for new product designs with ongoing availability and technical support. "Not For New Designs" status indicates the part is in end-of-life phase; while existing inventory may be available, the manufacturer does not recommend its use in new designs and may discontinue production. For new designs, select only Active status parts: IPB70N10S312ATMA1, PSMN013-100BS,118, PSMN015-100B,118, or STB80NF10T4.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on three factors: (1) Required continuous drain current—if your design requires 73A or higher, select PSMN015-100B,118 (75A) or STB80NF10T4 (80A); if 70A is acceptable, IPB70N10S312ATMA1 is suitable. (2) Thermal requirements—if power dissipation is critical, PSMN015-100B,118 (300W) or STB80NF10T4 (300W) provide superior thermal margin compared to IPB70N10S312ATMA1 (125W). (3) Switching frequency—if low switching losses are required, IPB70N10S312ATMA1 (66nC gate charge) or PSMN013-100BS,118 (59nC) are preferred over STB80NF10T4 (182nC).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 Compliant certification, matching the original AUIRFS4610. All parts also carry MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status, ensuring compliance with environmental and regulatory requirements.

Q: Can I use multiple substitute parts interchangeably in the same design?

A: All substitute parts maintain identical 100V Vdss, D2PAK packaging, and -55°C to 175°C operating range, enabling mechanical and electrical interchangeability. However, differences in on-state resistance, gate charge, and power dissipation may affect circuit performance. Thermal and electrical analysis is required to confirm that each substitute part meets your specific application requirements. Do not mix different substitute parts in the same design without documented engineering validation.

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