AUIRFS4410Z N-Channel 100V 97A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFS4410Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 97A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The part is classified as obsolete, making identification of active equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while offering active product status from current manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	97	A (Tc)
On-State Resistance (Rds On) @ 58A, 10V	9	mOhm
Power Dissipation (Max)	230	W (Tc)
Gate Charge (Qg) @ 10V	120	nC
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the AUIRFS4410Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be TO-263-3 or D2PAK (2 Leads + Tab) surface mount
Operating Temperature Range: Must span -55°C to 175°C minimum
Continuous Drain Current (Id): Must support 97A or greater at 25°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 9mOhm @ 10V are preferred
Power Dissipation: Must support minimum 230W at case temperature
Gate Charge (Qg): Lower values reduce drive requirements; 120nC serves as reference
Input Capacitance (Ciss): Affects switching speed; reference value 4820pF @ 50V

Substitute parts are grouped into two categories: direct replacements (matching or exceeding all primary parameters) and functional alternatives (meeting primary criteria with trade-offs in secondary parameters). All substitute parts listed maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status consistent with the main part.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Power Dissipation (W)	Qg (nC)	Package	Product Status
AUIRFS4410Z	Infineon Technologies	100	97	9 @ 58A, 10V	230	120 @ 10V	TO-263-3, D2PAK	Obsolete
IPB120N10S405ATMA1	Infineon Technologies	100	120	5 @ 100A, 10V	190	91 @ 10V	TO-263-3, D2PAK	Active
IPB083N10N3GATMA1	Infineon Technologies	100	80	8.3 @ 73A, 10V	125	55 @ 10V	TO-263-3, D2PAK	Active
IPB70N10S312ATMA1	Infineon Technologies	100	70	11.3 @ 70A, 10V	125	66 @ 10V	TO-263-3, D2PAK	Active
BUK969R3-100E,118	Nexperia USA Inc.	100	100	8.9 @ 25A, 10V	263	94.3 @ 5V	TO-263-3, D2PAK	Active
FDB3632	onsemi	100	80 (Tc)	9 @ 80A, 10V	310	110 @ 10V	TO-263-3, D2PAK	Active
IXTA130N10T	IXYS	100	130	9.1 @ 25A, 10V	360	104 @ 10V	TO-263-3, D2PAK	Active
IXTA130N10T-TRL	IXYS	100	130	9.1 @ 25A, 10V	360	104 @ 10V	TO-263-3, D2PAK	Active
PSMN009-100B,118	Nexperia USA Inc.	100	75	8.8 @ 25A, 10V	230	156 @ 10V	TO-263-3, D2PAK	Active
STB120NF10T4	STMicroelectronics	100	110	10.5 @ 60A, 10V	312	233 @ 10V	TO-263-3, D2PAK	Active

Engineering Selection Recommendations

Direct Replacement (Highest Compatibility):

The IPB120N10S405ATMA1 from Infineon Technologies is the primary recommended substitute. This part exceeds the AUIRFS4410Z in continuous drain current (120A vs. 97A) and maintains the same 100V Vdss rating. The IPB120N10S405ATMA1 features superior on-state resistance (5mOhm vs. 9mOhm) and lower gate charge (91nC vs. 120nC), resulting in improved efficiency and reduced drive requirements. This part carries active product status, AEC-Q101 automotive qualification, and is available in high volume (1128 units in stock). The OptiMOS™ series technology provides enhanced performance characteristics suitable for applications previously served by the obsolete HEXFET® device.

Alternative Substitutes (Current Availability):

The BUK969R3-100E,118 from Nexperia USA Inc. provides near-equivalent performance with 100A continuous drain current and 263W power dissipation. This TrenchMOS™ device holds AEC-Q101 automotive qualification and active product status. The IXTA130N10T and IXTA130N10T-TRL from IXYS offer higher current capability (130A) with 360W power dissipation, suitable for applications requiring additional thermal margin. Both IXYS variants maintain active status and are available in standard and tape-and-reel packaging options.

Lower Current Alternatives (Reduced Thermal Load):

The IPB083N10N3GATMA1 (80A) and IPB70N10S312ATMA1 (70A) from Infineon Technologies serve applications where the full 97A capability is not required. These parts reduce thermal dissipation and gate drive complexity while maintaining 100V Vdss compatibility and TO-263-3 packaging. Both are active products with OptiMOS™ technology.

Compliance and Certification:

All recommended substitutes maintain RoHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity, and REACH Unaffected status. The IPB120N10S405ATMA1, BUK969R3-100E,118, and SQM120P10_10M1LGE3 carry AEC-Q101 automotive qualification, suitable for automotive and industrial applications requiring formal qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can the IPB120N10S405ATMA1 directly replace the AUIRFS4410Z without circuit modification?

A: The IPB120N10S405ATMA1 is electrically compatible as a direct replacement. Both devices share identical 100V Vdss rating, TO-263-3 D2PAK packaging, and -55°C to 175°C operating temperature range. The IPB120N10S405ATMA1 provides superior performance with lower on-state resistance (5mOhm vs. 9mOhm) and reduced gate charge (91nC vs. 120nC). No circuit modifications are required; however, the improved characteristics may reduce power dissipation and gate drive current in the application.

Q: What is the primary difference between IXTA130N10T and IXTA130N10T-TRL?

A: Both parts are electrically identical N-Channel 100V 130A MOSFETs with identical electrical specifications. The primary difference is packaging: IXTA130N10T is supplied in Tube packaging, while IXTA130N10T-TRL is supplied in Tape & Reel (TR) format. The IXTA130N10T-TRL carries MSL Level 3 (168 Hours) moisture sensitivity, while the standard IXTA130N10T carries MSL Level 1 (Unlimited). Selection depends on production volume requirements and moisture handling procedures.

Q: Why does the FDB3632 show 12A (Ta) and 80A (Tc) for continuous drain current?

A: The FDB3632 specifies continuous drain current at two different measurement conditions: 12A at ambient temperature (Ta) and 80A at case temperature (Tc). The 80A (Tc) rating is the relevant specification for thermal design calculations and substitution compatibility assessment. This dual rating reflects the device's thermal performance characteristics and is standard practice for high-power surface mount packages.

Q: Is the BUK969R3-100E,118 suitable for automotive applications?

A: Yes. The BUK969R3-100E,118 carries AEC-Q101 automotive qualification and active product status from Nexperia USA Inc. This qualification indicates the part meets automotive industry reliability and quality standards. The device is suitable for automotive and industrial applications requiring formal qualification documentation.

Q: What is the significance of the lower gate charge in the IPB120N10S405ATMA1 compared to the AUIRFS4410Z?

A: Gate charge (Qg) directly affects the gate drive circuit requirements. The IPB120N10S405ATMA1 requires 91nC at 10V compared to 120nC for the AUIRFS4410Z. Lower gate charge reduces the current and energy required from the gate driver, resulting in lower power dissipation in the drive circuit and potentially allowing use of lower-rated gate driver components. This is a performance advantage in high-frequency switching applications.

Q: Can I use the IPB083N10N3GATMA1 if my application only requires 80A continuous current?

A: Yes. The IPB083N10N3GATMA1 is rated for 80A continuous drain current at 25°C and maintains the same 100V Vdss and TO-263-3 packaging as the AUIRFS4410Z. This part is suitable for applications where the full 97A capability is not required. The reduced current rating results in lower thermal dissipation (125W vs. 230W) and may simplify thermal management in the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity, and REACH Unaffected status, consistent with the AUIRFS4410Z. This ensures compatibility with modern manufacturing and environmental regulations.

Q: What is the difference between OptiMOS™ and TrenchMOS™ technology?

A: OptiMOS™ (Infineon) and TrenchMOS™ (Nexperia) are proprietary MOSFET manufacturing technologies that optimize different performance characteristics. Both are modern Metal Oxide Semiconductor technologies suitable for high-current applications. The specific technology does not affect substitution compatibility; electrical parameters (Vdss, Id, Rds On, package) determine compatibility. Selection between technologies depends on application-specific performance requirements and supplier availability.

Q: Why is the PSMN009-100B,118 listed as a substitute if it only provides 75A continuous current?

A: The PSMN009-100B,118 is listed as a functional alternative for applications where 75A continuous current is sufficient. This part maintains 100V Vdss, TO-263-3 packaging, and identical operating temperature range. The reduced current rating results in lower thermal dissipation (230W, matching the AUIRFS4410Z) and may be suitable for lower-power variants of the original application. This part is not a direct replacement but serves as an alternative for reduced-current designs.

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