AUIRFS4310Z N-Channel 100V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFS4310Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 120A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The HEXFET® series device delivers 250W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	6	mOhm
Gate Charge (Qg) @ 10V	170	nC
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the AUIRFS4310Z is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 120A or greater
Package compatibility: D2PAK or equivalent surface mount form factor
Operating temperature range: -55°C to 175°C minimum
RoHS3 compliance and REACH unaffected status

Secondary Compatibility Factors:

On-state resistance (Rds On) characteristics
Gate charge (Qg) for drive circuit compatibility
Power dissipation capability
Input capacitance (Ciss) for switching performance

The substitute parts listed below meet or exceed the primary substitution criteria. Variations in secondary parameters reflect different manufacturing series and design optimizations while maintaining functional equivalence for the specified electrical ratings.

Parameter Comparison

Parameter	AUIRFS4310Z	IPB120N10S405ATMA1	AOB410L	IXTA160N10T7	STB100N10F7	STH150N10F7-2
Manufacturer	Infineon	Infineon	Alpha & Omega	IXYS	STMicroelectronics	STMicroelectronics
Vdss (V)	100	100	100	100	100	100
Id @ 25°C (A)	120 (Tc)	120 (Tc)	150 (Tc)	160 (Tc)	80 (Tc)	110 (Tc)
Rds On (mOhm)	6 @ 75A, 10V	5 @ 100A, 10V	6.5 @ 20A, 10V	7 @ 25A, 10V	8 @ 40A, 10V	3.9 @ 55A, 10V
Qg @ 10V (nC)	170	91	129	132	61	117
Power Dissipation (W)	250 (Tc)	190 (Tc)	333 (Tc)	430 (Tc)	150 (Tc)	250 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	PG-TO263-3	TO-263 (D2PAK)	TO-263-7 (IXTA)	TO-263 (D2PAK)	H2PAK-2
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPB120N10S405ATMA1 (Infineon OptiMOS™)

This part is the manufacturer-recommended substitute for the AUIRFS4310Z. It maintains identical voltage and current ratings (100V, 120A) with improved on-state resistance (5mOhm vs. 6mOhm) and reduced gate charge (91nC vs. 170nC). The OptiMOS™ series offers enhanced switching efficiency. This device carries AEC-Q101 automotive qualification and is actively produced. The PG-TO263-3 package is mechanically and electrically compatible with the original D2PAK footprint.

STH150N10F7-2 (STMicroelectronics STripFET™ VII)

This substitute provides the same 250W power dissipation as the original AUIRFS4310Z with superior on-state resistance (3.9mOhm at 55A). The 110A continuous drain current rating meets the 120A requirement with margin. The H2PAK-2 package offers improved thermal performance compared to standard D2PAK. This device is actively produced and fully compliant with RoHS3 and REACH requirements.

IXTA160N10T7 (IXYS Trench)

This part exceeds the original specifications with 160A continuous drain current and 430W power dissipation. The TO-263-7 package variant provides six leads plus tab for enhanced thermal management. Gate charge of 132nC is comparable to the original. This device is actively produced and suitable for applications requiring higher current capacity or improved thermal performance.

AOB410L (Alpha & Omega SDMOS™)

This substitute offers 150A continuous drain current and exceptional power dissipation (333W). The SDMOS™ series provides lower on-state resistance characteristics. This device is actively produced with high inventory availability. The TO-263 D2PAK package is directly compatible with the original footprint.

STB100N10F7 (STMicroelectronics STripFET™ VII)

This part provides 80A continuous drain current, which is below the original 120A specification. Selection of this substitute is appropriate only for applications where the actual current requirement is 80A or less. The device offers reduced gate charge (61nC) and is actively produced. The TO-263 D2PAK package is directly compatible.

Frequently Asked Questions (FAQ)

Q: Can I use STB100N10F7 as a direct replacement for AUIRFS4310Z?

A: The STB100N10F7 is not a direct replacement. While it shares the same 100V voltage rating and D2PAK package, its 80A continuous drain current rating is below the original 120A specification. Use this substitute only if your application requires 80A or less. For applications requiring the full 120A rating, select IPB120N10S405ATMA1, STH150N10F7-2, IXTA160N10T7, or AOB410L.

Q: What is the difference between D2PAK and H2PAK-2 packages?

A: Both packages are surface mount variants of the TO-263 family with identical pin configurations and footprints. The H2PAK-2 designation indicates an enhanced thermal design with improved heat dissipation characteristics. Devices in H2PAK-2 packaging are mechanically and electrically compatible with standard D2PAK applications.

Q: Why does IPB120N10S405ATMA1 have lower gate charge than the original AUIRFS4310Z?

A: Gate charge reduction (91nC vs. 170nC) reflects advances in MOSFET manufacturing technology within the OptiMOS™ series. Lower gate charge reduces drive circuit power consumption and enables faster switching transitions. This is a performance improvement, not a limitation.

Q: Is the IXTA160N10T7 suitable for my application if I only need 120A?

A: Yes. The IXTA160N10T7 is rated for 160A continuous drain current, which exceeds the 120A requirement. The higher current rating provides design margin and does not create compatibility issues. The device operates identically at 120A as the original AUIRFS4310Z.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and REACH unaffected, matching the compliance status of the original AUIRFS4310Z.

Q: What is the significance of "Active" product status for substitute parts?

A: Active product status indicates the part is currently manufactured and available from the supplier. This ensures long-term availability for production and design continuity, unlike the obsolete AUIRFS4310Z.

Q: Can I interchange substitute parts within the same application?

A: Substitutes with identical or higher voltage and current ratings are interchangeable within the same application, provided the package footprint is compatible. Verify on-state resistance and gate charge characteristics against your drive circuit design to confirm switching performance is acceptable.

Q: Why does AOB410L show different current ratings (12A Ta, 150A Tc)?

A: The dual current ratings reflect measurement conditions. The 12A rating is at ambient temperature (Ta), while 150A is at case temperature (Tc). For design purposes, use the case temperature rating (150A) as it represents the device capability under typical thermal management conditions.

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