AUIRFS4010-7P Equivalent & Substitute Parts Reference

Part Overview

The AUIRFS4010-7P is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 190A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-7) surface mount package and is part of the HEXFET® series. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 380W maximum power dissipation and low on-resistance characteristics make this device suitable for high-current switching applications requiring efficient thermal management.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	190	A
On-Resistance (Rds On) @ 110A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	230	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 50V	9830	pF
Power Dissipation (Max)	380	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-7)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the AUIRFS4010-7P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥100V to maintain voltage rating compatibility
Continuous Drain Current (Id): Must be ≥180A to support high-current applications
Package Type: Surface mount D2PAK or equivalent TO-263 variants acceptable
Operating Temperature Range: Must span -55°C to 175°C minimum
On-Resistance (Rds On): Lower or equal values preferred for thermal efficiency
RoHS Compliance: ROHS3 compliance required for regulatory alignment

Substitution Logic: The three identified substitute parts meet the voltage and current requirements with minor trade-offs in specific parameters. IPB180N10S403ATMA1 maintains 100V rating with 180A current (10A reduction) and improved on-resistance. STH140N8F7-2 operates at reduced voltage (80V) and current (90A), suitable only for lower-stress applications. SUM70040E-GE3 provides 100V rating with 120A current and maintains comparable power dissipation characteristics.

Parameter Comparison

Parameter	AUIRFS4010-7P	IPB180N10S403ATMA1	STH140N8F7-2	SUM70040E-GE3
Manufacturer	Infineon	Infineon	STMicroelectronics	Vishay Siliconix
Vdss (V)	100	100	80	100
Id @ 25°C (A)	190	180	90	120
Rds On (mOhm)	4 @ 110A, 10V	3.3 @ 100A, 10V	4 @ 45A, 10V	4 @ 20A, 10V
Vgs(th) (V)	4 @ 250µA	3.5 @ 180µA	4.5 @ 250µA	4 @ 250µA
Gate Charge (nC)	230 @ 10V	140 @ 10V	96 @ 10V	120 @ 10V
Ciss (pF)	9830 @ 50V	10120 @ 25V	6340 @ 40V	5100 @ 50V
Power Dissipation (W)	380	250	200	375
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-7)	PG-TO263-7-3	H2PAK-2 (TO-263-3)	TO-263 (D2PAK)
Product Status	Obsolete	Last Time Buy	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPB180N10S403ATMA1 (Infineon OptiMOS™ Series)

This substitute maintains full voltage compatibility at 100V and provides 180A continuous drain current, representing a 5.3% reduction from the original 190A specification. The improved on-resistance of 3.3mOhm versus 4mOhm reduces conduction losses. Lower gate charge (140nC versus 230nC) improves switching speed and reduces driver power requirements. The part carries Last Time Buy status, indicating limited future availability. Automotive qualification (AEC-Q101) provides additional reliability assurance for demanding applications. Recommended for direct replacement in applications where the 10A current margin is acceptable.

STH140N8F7-2 (STMicroelectronics DeepGATE™/STripFET™ VII Series)

This substitute operates at reduced voltage (80V) and current (90A), representing significant derating from the original specification. The 80V rating is unsuitable for 100V applications. The 90A current capability is insufficient for designs requiring the full 190A capacity of the original part. This device is appropriate only for applications with lower voltage and current requirements or as a secondary option in designs with substantial design margins. Active product status ensures ongoing availability. Recommended only when application requirements permit voltage and current reduction.

SUM70040E-GE3 (Vishay TrenchFET® Series)

This substitute maintains 100V voltage rating with 120A continuous drain current, representing a 36.8% reduction from the original 190A specification. Power dissipation of 375W closely matches the original 380W rating. Lower gate charge (120nC) and input capacitance (5100pF) improve switching characteristics. Active product status with high inventory (22,100 pieces) ensures reliable procurement. REACH Affected status requires compliance verification for regulated applications. Recommended for applications where 120A current capacity is sufficient or where thermal performance is prioritized over maximum current handling.

Frequently Asked Questions (FAQ)

Q: Can IPB180N10S403ATMA1 be used as a direct pin-for-pin replacement for AUIRFS4010-7P?

A: The IPB180N10S403ATMA1 uses package designation PG-TO263-7-3, which is electrically and mechanically compatible with the D2PAK (TO-263-7) package of the original part. Pin configuration and lead spacing are compatible. However, the 10A current reduction (180A versus 190A) must be verified against application requirements. Thermal design should account for the reduced power dissipation rating (250W versus 380W).

Q: Why does STH140N8F7-2 have lower voltage and current ratings?

A: STH140N8F7-2 is designed for different application requirements, operating at 80V and 90A. This device is not a true equivalent but rather a lower-rated alternative. Selection of this part requires confirmation that the application can operate within these reduced specifications. Use of this part in a 100V, 190A design would result in inadequate performance and potential circuit failure.

Q: What is the significance of "Last Time Buy" status for IPB180N10S403ATMA1?

A: Last Time Buy status indicates that Infineon has announced end-of-life for this product. Current inventory (1,567 pieces) represents the final available stock. Designs selecting this substitute should plan for transition to alternative parts within the product lifecycle window. SUM70040E-GE3 with Active status is recommended for new designs requiring long-term availability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all three substitute parts carry ROHS3 Compliant status, matching the original AUIRFS4010-7P. This ensures regulatory compliance for applications subject to RoHS directives. However, SUM70040E-GE3 carries REACH Affected status, requiring additional compliance verification for applications in regulated markets.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The original part requires 230nC, while substitutes range from 96nC to 140nC. Lower gate charge reduces driver power dissipation and allows faster switching speeds. Gate driver circuits must be verified to ensure adequate current sourcing capability at the specified switching frequency. Reduced gate charge may improve overall system efficiency.

Q: What package considerations apply when selecting substitutes?

A: AUIRFS4010-7P uses D2PAK (TO-263-7) with 7 leads. IPB180N10S403ATMA1 uses PG-TO263-7-3, which is mechanically and electrically compatible. STH140N8F7-2 uses H2PAK-2 (TO-263-3) with 3 leads, requiring PCB layout modification. SUM70040E-GE3 uses standard TO-263 (D2PAK) with 3 leads. Verify PCB footprint compatibility before design implementation.

Q: Can these substitutes be used interchangeably in existing designs?

A: No. Each substitute has different electrical characteristics and current ratings. Circuit performance depends on matching the substitute's specifications to application requirements. Thermal analysis, current distribution, and switching characteristics must be re-evaluated for each substitute. Direct substitution without design review is not recommended.

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