AUIRFS3607TRL N-Channel 75V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFS3607TRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 80A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and delivers 140W maximum power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	80	A
On-State Resistance (Rds On) @ 46A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	84	nC
Input Capacitance (Ciss) @ 50V	3070	pF
Power Dissipation (Max)	140	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Technology	MOSFET (Metal Oxide)	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution of the AUIRFS3607TRL is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 75V
Continuous Drain Current (Id) must equal or exceed 80A at 25°C
On-State Resistance (Rds On) must not significantly exceed 9mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Requirements:

Package type must be D2PAK (TO-263-3) or equivalent surface mount configuration
Mounting type must be surface mount
Pin configuration must support direct PCB layout substitution

Compliance Requirements:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) preferred
REACH unaffected status required

Substitute parts are grouped into two categories:

Parametric Equivalent (Direct Replacement): Parts matching the AUIRFS3607TRL electrical specifications and package type with active product status.

Functional Equivalent (Performance Substitute): Parts with comparable or superior electrical performance in the same package family, accommodating minor parameter variations while maintaining circuit functionality.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
AUIRFS3607TRL	Infineon	75	80	9 @ 46A, 10V	4 @ 100µA	84 @ 10V	3070 @ 50V	140	D2PAK	Obsolete
IRFS3607TRLPBF	Infineon	75	80	9 @ 46A, 10V	4 @ 100µA	84 @ 10V	3070 @ 50V	140	D2PAK	Active
FDB088N08	onsemi	75	120	8.8 @ 75A, 10V	4 @ 250µA	118 @ 10V	6595 @ 25V	160	D2PAK	Active
IXTA90N075T2	IXYS	75	90	10 @ 25A, 10V	4 @ 250µA	54 @ 10V	3290 @ 25V	180	TO-263AA	Active
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	4 @ 250µA	160 @ 10V	3700 @ 25V	300	D2PAK	Active
PSMN008-75B,118	Nexperia USA Inc.	75	75	8.5 @ 25A, 10V	4 @ 1mA	122.8 @ 10V	5260 @ 25V	230	D2PAK	Active
BUK9609-75A,118	NXP USA Inc.	75	75	8.5 @ 25A, 10V	2 @ 1mA	—	8840 @ 25V	230	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	2.5 @ 250µA	90 @ 5V	4300 @ 25V	300	D2PAK	Active
IAUZ40N08S5N100ATMA1	Infineon	80	40	10 @ 20A, 10V	3.8 @ 27µA	24.2 @ 10V	1591 @ 40V	68	8-PowerTDFN	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRFS3607TRLPBF is the direct parametric equivalent to AUIRFS3607TRL. This part maintains identical electrical specifications (75V, 80A, 9mOhm Rds On, 140W power dissipation) and D2PAK packaging. The device carries active product status, RoHS3 compliance, and unlimited moisture sensitivity rating. This part is recommended as the primary replacement for obsolete AUIRFS3607TRL applications requiring no circuit modification.

Functional Equivalents (Performance Substitutes):

STB75NF75T4 (STMicroelectronics) provides equivalent voltage and current ratings with improved power dissipation capability (300W vs. 140W). The device maintains D2PAK packaging and active product status. On-state resistance is slightly elevated (11mOhm vs. 9mOhm), resulting in marginally higher conduction losses. This part is suitable for applications where thermal headroom is beneficial.

FDB088N08 (onsemi) offers superior current handling (120A vs. 80A) and improved on-state resistance (8.8mOhm vs. 9mOhm) in D2PAK packaging. Power dissipation is rated at 160W. This part accommodates higher current applications while maintaining voltage compatibility.

IXTA90N075T2 (IXYS) provides 90A continuous current rating with 180W power dissipation in TO-263AA packaging. On-state resistance is 10mOhm. This part is suitable for applications requiring moderate current increase with maintained thermal performance.

PSMN008-75B,118 (Nexperia USA Inc.) delivers 75A continuous current with superior on-state resistance (8.5mOhm) and 230W power dissipation in D2PAK packaging. This part is recommended for applications prioritizing low conduction losses.

Automotive-Qualified Alternatives:

BUK9609-75A,118 (NXP USA Inc.) and STB75NF75LT4 (STMicroelectronics) both carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring formal qualification documentation.

Lower Current Alternative:

IAUZ40N08S5N100ATMA1 (Infineon OptiMOS-5) is not a direct substitute due to reduced current rating (40A vs. 80A) and different package type (8-PowerTDFN). This part is listed only for applications where current requirements are lower and package footprint constraints permit alternative mounting.

Frequently Asked Questions (FAQ)

Q: Can IRFS3607TRLPBF directly replace AUIRFS3607TRL without circuit modification?

A: Yes. IRFS3607TRLPBF is a parametric equivalent with identical electrical specifications and D2PAK packaging. No circuit modification is required. The part carries active product status and full RoHS3 compliance.

Q: What is the primary difference between AUIRFS3607TRL and STB75NF75T4?

A: Both parts share 75V voltage rating and 80A current rating. STB75NF75T4 provides higher power dissipation (300W vs. 140W) and slightly elevated on-state resistance (11mOhm vs. 9mOhm). The STB75NF75T4 is suitable for applications where thermal margin is required.

Q: Can FDB088N08 be used in place of AUIRFS3607TRL?

A: FDB088N08 is a functional equivalent with superior current handling (120A vs. 80A) and improved on-state resistance (8.8mOhm vs. 9mOhm). The part maintains 75V voltage rating and D2PAK packaging. Substitution is valid for applications where the higher current capability does not introduce circuit instability.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance status. Compliance documentation is available from respective manufacturers.

Q: What is the significance of the different gate charge (Qg) values among substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. AUIRFS3607TRL specifies 84nC at 10V. Substitute parts range from 24.2nC to 160nC. Higher gate charge requires increased driver current capability. Lower gate charge reduces switching losses but may require driver circuit adjustment.

Q: Can IAUZ40N08S5N100ATMA1 replace AUIRFS3607TRL?

A: No. IAUZ40N08S5N100ATMA1 is rated for only 40A continuous current, insufficient for 80A applications. Additionally, the part uses 8-PowerTDFN packaging, incompatible with D2PAK PCB layouts. This part is suitable only for lower current applications with redesigned board layouts.

Q: Which substitute part offers the lowest on-state resistance?

A: FDB088N08 provides the lowest on-state resistance at 8.8mOhm (measured at 75A, 10V), followed by PSMN008-75B,118 at 8.5mOhm (measured at 25A, 10V). Lower on-state resistance reduces conduction losses and heat generation.

Q: Are automotive-qualified alternatives available?

A: Yes. BUK9609-75A,118 (NXP) and STB75NF75LT4 (STMicroelectronics) both carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring formal qualification documentation.

Q: What packaging options are available for substitutes?

A: All recommended substitute parts use D2PAK (TO-263-3) or equivalent surface mount packaging, maintaining PCB layout compatibility with AUIRFS3607TRL. IAUZ40N08S5N100ATMA1 uses 8-PowerTDFN packaging, requiring board redesign.

Q: How do input capacitance values affect circuit performance?

A: Input capacitance (Ciss) affects gate drive circuit design and switching transient behavior. AUIRFS3607TRL specifies 3070pF at 50V. Substitute parts range from 1591pF to 8840pF. Higher capacitance increases gate charge and switching losses; lower capacitance reduces driver requirements but may increase switching noise.

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