AUIRFS3607 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFS3607 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 80A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. The HEXFET® series device delivers 140W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Substiute Parts

AUIRFS3607
Infineon TechnologiesIn Stock: 16717AUIRFS3607 Datasheet
AUIRFS3607
Current Part
IAUZ40N08S5N100ATMA1
Infineon TechnologiesIn Stock: 7241IAUZ40N08S5N100ATMA1 Datasheet
IAUZ40N08S5N100ATMA1
MFR Recommended
BUK9609-75A,118
NXP USA Inc.In Stock: 1759BUK9609-75A,118 Datasheet
BUK9609-75A,118
MFR Recommended
FDB088N08
onsemiIn Stock: 24920FDB088N08 Datasheet
FDB088N08
MFR Recommended
IXTA90N055T2
IXYSIn Stock: 996IXTA90N055T2 Datasheet
IXTA90N055T2
MFR Recommended
IXTA90N075T2
IXYSIn Stock: 3416IXTA90N075T2 Datasheet
IXTA90N075T2
MFR Recommended
PSMN008-75B,118
Nexperia USA Inc.In Stock: 6579PSMN008-75B,118 Datasheet
PSMN008-75B,118
MFR Recommended
STB140NF55T4
STMicroelectronicsIn Stock: 15448STB140NF55T4 Datasheet
STB140NF55T4
MFR Recommended
STB75NF75LT4
STMicroelectronicsIn Stock: 5850STB75NF75LT4 Datasheet
STB75NF75LT4
MFR Recommended
STB75NF75T4
STMicroelectronicsIn Stock: 43499STB75NF75T4 Datasheet
STB75NF75T4
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 80 A
On-Resistance (Rds On) @ 46A, 10V 9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA 4 V
Gate Charge (Qg) @ 10V 84 nC
Input Capacitance (Ciss) @ 50V 3070 pF
Power Dissipation (Max) 140 W
Operating Temperature Range -55 to 175 °C
Package Type TO-263-3 (D2PAK)
Mounting Type Surface Mount
Gate Voltage (Vgs) Max ±20 V
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the AUIRFS3607 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): 75V nominal rating
  • Continuous Drain Current (Id): 80A minimum at 25°C
  • Package Type: TO-263-3 (D2PAK) surface mount configuration
  • Operating Temperature Range: -55°C to 175°C
  • Gate Voltage Rating (Vgs): ±20V maximum

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): 9–11 mOhm range at 10V gate drive
  • Gate Charge (Qg): 84–160 nC at 10V
  • Input Capacitance (Ciss): 3000–6600 pF range
  • Power Dissipation: 140W minimum

Substitute parts are grouped into two categories: Direct Package Equivalents (identical D2PAK footprint) and Functional Equivalents (alternative packages with compatible electrical performance). All substitute parts maintain N-Channel MOSFET technology, surface mount configuration, and industrial temperature range compliance.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On @ 10V (mOhm) Qg @ 10V (nC) Ciss @ 25-50V (pF) Power Diss. (W) Package Status
AUIRFS3607 Infineon 75 80 9 84 3070 140 D2PAK Obsolete
FDB088N08 onsemi 75 120 8.8 118 6595 160 D2PAK Active
IXTA90N075T2 IXYS 75 90 10 54 3290 180 D2PAK Active
IXTA90N055T2 IXYS 55 90 8.4 42 2770 150 D2PAK Active
BUK9609-75A,118 NXP USA Inc. 75 75 8.5 8840 230 D2PAK Active
PSMN008-75B,118 Nexperia USA Inc. 75 75 8.5 122.8 5260 230 D2PAK Active
STB75NF75T4 STMicroelectronics 75 80 11 160 3700 300 D2PAK Active
STB75NF75LT4 STMicroelectronics 75 75 11 90 4300 300 D2PAK Active
STB140NF55T4 STMicroelectronics 55 80 8 142 5300 300 D2PAK Active
IAUZ40N08S5N100ATMA1 Infineon 80 40 10 24.2 1591 68 8-PowerTDFN Active

Engineering Selection Recommendations

Direct Substitutes (Identical D2PAK Package, 75V Rating):

The following parts provide direct mechanical and electrical compatibility with the AUIRFS3607 in D2PAK surface mount configuration at 75V Vdss rating:

  • FDB088N08 (onsemi, Active): Exceeds current rating at 120A, maintains 75V Vdss, D2PAK package. Lower Rds On (8.8 mOhm) and higher power dissipation (160W) support higher current applications.

  • IXTA90N075T2 (IXYS, Active): Rated 90A at 75V Vdss in D2PAK package. Comparable Rds On (10 mOhm) and gate charge (54 nC) with enhanced power dissipation (180W).

  • PSMN008-75B,118 (Nexperia USA Inc., Active): 75A at 75V Vdss in D2PAK package. Rds On of 8.5 mOhm and 230W power dissipation provide thermal margin.

  • STB75NF75T4 (STMicroelectronics, Active): 80A at 75V Vdss in D2PAK package. Matches original current rating with 11 mOhm Rds On and 300W power dissipation. Highest inventory availability (43,400 units).

  • STB75NF75LT4 (STMicroelectronics, Active): 75A at 75V Vdss in D2PAK package. Alternative STripFET™ II variant with 300W power dissipation.

Functional Equivalents (Alternative Packages or Voltage Ratings):

  • BUK9609-75A,118 (NXP USA Inc., Active): 75V/75A in D2PAK with TrenchMOS™ technology. AEC-Q101 automotive qualification. 230W power dissipation.

  • STB140NF55T4 (STMicroelectronics, Active): 55V/80A in D2PAK. Lower voltage rating suitable for applications with reduced voltage headroom. 300W power dissipation.

  • IXTA90N055T2 (IXYS, Active): 55V/90A in D2PAK. Lower voltage alternative with higher current capability.

  • IAUZ40N08S5N100ATMA1 (Infineon, Active): 80V/40A in 8-PowerTDFN package. OptiMOS™-5 series with AEC-Q101 automotive qualification. Alternative package for space-constrained designs with reduced current requirements.

Selection Basis:

All recommended substitutes maintain ROHS3 compliance, unlimited moisture sensitivity level (MSL 1), and industrial temperature range (-55°C to 175°C). Active product status ensures long-term availability and supply chain continuity. D2PAK package equivalents provide direct PCB footprint compatibility without layout modification.

Frequently Asked Questions (FAQ)

Q: Can the AUIRFS3607 be replaced with a lower current-rated device?

A: No. The AUIRFS3607 is rated for 80A continuous drain current. Substitutes must maintain minimum 80A rating to preserve circuit performance and thermal characteristics. Lower-rated devices (such as IAUZ40N08S5N100ATMA1 at 40A) are not suitable for direct replacement in applications requiring full 80A capability.

Q: What is the primary difference between STB75NF75T4 and STB75NF75LT4?

A: Both devices are rated 75V in D2PAK package. STB75NF75T4 is rated 80A continuous drain current, matching the AUIRFS3607 specification. STB75NF75LT4 is rated 75A. Gate charge differs (160 nC vs. 90 nC at 10V), affecting switching speed. Select STB75NF75T4 for direct current-matched replacement.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed carry ROHS3 compliance certification, meeting environmental and hazardous substance restrictions for commercial and industrial applications.

Q: Can the IAUZ40N08S5N100ATMA1 replace the AUIRFS3607 in existing designs?

A: No. The IAUZ40N08S5N100ATMA1 is rated 40A continuous drain current, half the AUIRFS3607 specification. Additionally, it uses an 8-PowerTDFN package instead of D2PAK, requiring PCB layout redesign. This part is suitable only for new designs with reduced current requirements and space constraints.

Q: What is the significance of the D2PAK package for substitution?

A: The D2PAK (TO-263-3) package provides identical PCB footprint, thermal interface, and lead configuration across all direct substitutes. This enables drop-in replacement without PCB modification. Alternative packages (such as 8-PowerTDFN) require layout redesign and are not considered direct substitutes.

Q: Which substitute offers the best thermal performance?

A: STB75NF75T4 and STB140NF55T4 both deliver 300W maximum power dissipation, the highest among all substitutes. STB75NF75T4 maintains the 75V/80A rating of the AUIRFS3607 with superior thermal margin. STB140NF55T4 operates at reduced voltage (55V) with equivalent current rating.

Q: Are automotive-grade substitutes available?

A: Yes. BUK9609-75A,118 (NXP) and IAUZ40N08S5N100ATMA1 (Infineon) carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring formal qualification documentation.

Q: What is the impact of gate charge (Qg) differences on circuit design?

A: Gate charge affects switching speed and gate drive circuit requirements. The AUIRFS3607 specifies 84 nC at 10V. Substitutes range from 24.2 nC (IAUZ40N08S5N100ATMA1) to 160 nC (STB75NF75T4). Higher gate charge requires increased gate drive current or extended switching time. Verify gate drive circuit compatibility before substitution.

Q: Can FDB088N08 be used in applications requiring exactly 80A?

A: Yes. FDB088N08 is rated 120A continuous drain current at 75V, exceeding the 80A requirement. The higher current rating provides design margin and thermal headroom. On-resistance (8.8 mOhm) is comparable to the AUIRFS3607 (9 mOhm), ensuring similar power dissipation at rated current levels.

Q: What inventory status should influence substitution decisions?

A: STB75NF75T4 maintains the highest inventory (43,400 units), ensuring immediate availability and supply chain stability. FDB088N08 (24,879 units) and STB140NF55T4 (15,365 units) provide secondary sourcing options. Lower inventory parts (IXTA90N055T2 at 896 units) should be evaluated for long-term supply risk.

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