AUIRFS3107 Equivalent & Substitute Parts

Part Overview

The AUIRFS3107 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK surface mount package and is part of the HEXFET® series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	195	A (Tc)
On-State Resistance (Rds On Max) @ 140A, 10V	3	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	240	nC
Power Dissipation (Max)	370	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Maximum Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the AUIRFS3107 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 75V to maintain voltage margin in the original circuit design.

Current Handling Capability: The continuous drain current (Id) at 25°C must be sufficient to support the application's current requirements. Parts with lower current ratings may operate at higher junction temperatures or require thermal derating.

On-State Resistance (Rds On): Lower Rds On values reduce conduction losses and heat generation. Substitute parts with comparable or lower Rds On at specified gate voltage (10V) maintain thermal performance.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with similar gate charge ensure compatible gate drive characteristics.

Package Compatibility: All substitute parts must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating temperature range to maintain reliability across application conditions.

Product Status and Compliance: Active product status ensures ongoing availability and support. RoHS3 compliance and REACH unaffected status maintain regulatory alignment.

Parameter Comparison

Parameter	AUIRFS3107 (Main)	BUK763R1-60E,118	FDB035AN06A0	IXTA260N055T2-7
Manufacturer	Infineon Technologies	Nexperia USA Inc.	Fairchild Semiconductor	IXYS
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	75	60	60	55
Id @ 25°C (A)	195 (Tc)	120 (Tc)	80 (Tc)	260 (Tc)
Rds On Max @ 10V (mOhm)	3.0 @ 140A	3.1 @ 25A	3.5 @ 80A	3.3 @ 50A
Vgs(th) Max (V)	4 @ 250µA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg Max @ 10V (nC)	240	114	124	140
Ciss Max (pF)	9370 @ 50V	8920 @ 25V	6400 @ 25V	10800 @ 25V
Power Dissipation Max (W)	370 (Tc)	293 (Tc)	310 (Tc)	480 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	D2PAK (TO-263-3)	TO-263 (D2PAK)	TO-263-7 (IXTA)
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

BUK763R1-60E,118 (Nexperia USA Inc.): This part is an active product with AEC-Q101 automotive qualification and ROHS3 compliance. The 60V Vdss rating is lower than the original 75V specification, reducing voltage margin by 20%. The 120A continuous drain current is approximately 62% of the AUIRFS3107 rating. This substitute is suitable for applications where the circuit operates at lower voltage levels and current demands do not exceed 120A. The lower gate charge (114 nC) provides faster switching characteristics compared to the main part.

FDB035AN06A0 (Fairchild Semiconductor): This active product features a 60V Vdss rating and 80A continuous drain current (Tc), representing significant reductions from the original specifications. The 310W power dissipation rating is lower than the AUIRFS3107. This substitute is applicable only to lower-power applications with reduced current requirements. The lower input capacitance (6400 pF) may improve switching performance in gate-drive-limited circuits.

IXTA260N055T2-7 (IXYS): This active product offers the highest current capability at 260A continuous drain current, exceeding the AUIRFS3107 by 33%. The 55V Vdss rating is lower than the original 75V specification. The 480W power dissipation rating exceeds the main part, providing superior thermal headroom. This substitute is suitable for high-current applications where voltage margin reduction is acceptable. The TO-263-7 package variant includes additional leads compared to the standard D2PAK, requiring PCB layout verification for mechanical compatibility.

All substitute parts maintain the required operating temperature range (-55°C to 175°C) and gate voltage ratings (±20V). Selection should be based on specific application voltage and current requirements, with consideration for thermal management and PCB layout constraints.

Frequently Asked Questions (FAQ)

Q: Can the BUK763R1-60E,118 be used as a direct replacement for the AUIRFS3107?

A: The BUK763R1-60E,118 is not a direct replacement due to reduced voltage and current ratings. The 60V Vdss is 20% lower than the 75V specification, and the 120A continuous current is 38% lower than the 195A rating. Use this substitute only in applications confirmed to operate within these reduced specifications.

Q: What is the primary limitation of the FDB035AN06A0 as a substitute?

A: The FDB035AN06A0 has the lowest current rating at 80A (Tc), which is 59% below the AUIRFS3107 specification. This part is suitable only for low-current applications. The 60V voltage rating also represents a 20% reduction from the original 75V specification.

Q: Why does the IXTA260N055T2-7 use a different package designation (TO-263-7) compared to the AUIRFS3107 (TO-263-3)?

A: The IXTA260N055T2-7 uses a TO-263-7 variant with six leads plus tab, compared to the standard D2PAK (TO-263-3) with two leads plus tab. This package difference requires verification of PCB footprint compatibility and thermal interface design before implementation.

Q: Are all substitute parts RoHS3 compliant?

A: The BUK763R1-60E,118 and IXTA260N055T2-7 are explicitly listed as ROHS3 compliant. The FDB035AN06A0 does not specify RoHS status in the provided data. Verify RoHS compliance requirements with the component supplier before final selection.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (Qg) reduces the charge required to switch the transistor on and off, potentially allowing faster switching speeds and reduced gate driver power consumption. The BUK763R1-60E,118 (114 nC) and FDB035AN06A0 (124 nC) have lower gate charge than the AUIRFS3107 (240 nC), which may improve switching performance in gate-drive-limited applications.

Q: Can voltage margin be compromised by selecting a lower Vdss-rated substitute?

A: All three substitute parts have lower Vdss ratings (55V or 60V) compared to the AUIRFS3107 (75V). Reduced voltage margin increases the risk of device failure if transient overvoltage events occur. Substitute selection with lower Vdss ratings requires confirmation that the application circuit includes adequate overvoltage protection and operates within the reduced voltage specification.

Q: How does the IXTA260N055T2-7 thermal performance compare to the main part?

A: The IXTA260N055T2-7 has a 480W power dissipation rating, which is 30% higher than the AUIRFS3107 (370W). This higher rating provides greater thermal headroom and may allow operation at higher junction temperatures or reduced heatsink requirements in high-current applications.

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