AUIRFP2907Z N-Channel 75V 170A MOSFET Equivalent & Substitute Parts

Part Overview

The AUIRFP2907Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 170A continuous drain current in a Through Hole TO-247AC package. This device is classified as Obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. The HEXFET® series device delivers 310W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Substiute Parts

AUIRFP2907Z

Infineon TechnologiesIn Stock: 752AUIRFP2907Z Datasheet

Current PartRFQ

FDH047AN08A0

onsemiIn Stock: 3460FDH047AN08A0 Datasheet

MFR RecommendedRFQ

FDH210N08

onsemiIn Stock: 2050FDH210N08 Datasheet

MFR RecommendedRFQ

IXFH230N075T2

IXYSIn Stock: 1088IXFH230N075T2 Datasheet

MFR RecommendedRFQ

IXTH200N10T

IXYSIn Stock: 5763IXTH200N10T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the AUIRFP2907Z are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 75V nominal rating
• Package Type: TO-247-3 Through Hole configuration
• Operating Temperature Range: -55°C to 175°C minimum
• Gate Drive Voltage: 10V maximum Rds On specification

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Rated at or above 170A
• On-State Resistance (Rds On): Comparable performance at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
• Power Dissipation: Minimum 310W capability

The four substitute parts listed below meet these criteria with varying current ratings and power dissipation capabilities, allowing selection based on specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

FDH047AN08A0 (onsemi): This substitute provides exact voltage and power dissipation matching at 75V and 310W. However, the continuous drain current rating of 15A is significantly lower than the AUIRFP2907Z specification of 170A. This part is suitable only for applications where current requirements do not exceed 15A. The device is ROHS3 compliant and carries Active product status, ensuring long-term availability. Gate charge is reduced to 138nC, offering faster switching characteristics.

FDH210N08 (onsemi): This part maintains the 75V voltage rating and exceeds the current requirement with 210A continuous drain current. Power dissipation capability increases to 462W. The device is ROHS3 compliant with Active product status. Specific Rds On and Vgs(th) values are not provided in the datasheet specifications. This substitute is appropriate for applications requiring current capacity above 170A within the 75V rating.

IXFH230N075T2 (IXYS): This device delivers the highest current rating at 230A with 75V voltage specification and 480W power dissipation. The HiPerFET™ and TrenchT2™ series designation indicates advanced process technology. Rds On of 4.2mOhm at 50A and gate charge of 178nC provide efficient switching performance. ROHS3 compliance and Active status confirm regulatory alignment and availability. The TO-247AD package variant maintains Through Hole mounting compatibility.

IXTH200N10T (IXYS): This part operates at 100V drain-to-source voltage, exceeding the AUIRFP2907Z specification by 25V. Continuous drain current is 200A with 550W power dissipation. The higher voltage rating provides additional design margin for transient overvoltage conditions. Rds On of 5.5mOhm and gate charge of 152nC are specified. ROHS3 compliance and Active product status are confirmed. This substitute is suitable for applications where higher voltage headroom is beneficial or required.

All substitute parts maintain the -55°C to 175°C operating temperature range and Through Hole mounting configuration. Selection should be based on specific application current requirements, voltage margin needs, and thermal management capabilities.

Frequently Asked Questions (FAQ)

Q: Can FDH047AN08A0 replace AUIRFP2907Z in all applications?

A: No. FDH047AN08A0 is rated for only 15A continuous drain current, compared to AUIRFP2907Z at 170A. This substitute is limited to applications with significantly lower current requirements. Voltage rating (75V) and power dissipation (310W) are matched, but current capacity is the limiting factor.

Q: What is the primary difference between FDH210N08 and IXFH230N075T2?

A: Both maintain the 75V voltage specification. FDH210N08 provides 210A current capacity with 462W power dissipation, while IXFH230N075T2 delivers 230A with 480W dissipation. IXFH230N075T2 includes advanced process technology (HiPerFET™, TrenchT2™) and specifies lower Rds On (4.2mOhm vs. unspecified for FDH210N08). Selection depends on available thermal management and switching performance requirements.

Q: Why does IXTH200N10T have a 100V rating instead of 75V?

A: IXTH200N10T is rated for 100V drain-to-source voltage, which exceeds the AUIRFP2907Z specification. This higher voltage rating provides additional safety margin against transient overvoltage events and allows operation in circuits with higher supply voltages. The device remains compatible with 75V nominal applications while offering enhanced voltage headroom.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. FDH047AN08A0, FDH210N08, IXFH230N075T2, and IXTH200N10T are all ROHS3 compliant. The original AUIRFP2907Z RoHS status is not specified in the provided data. All active substitute parts meet current environmental and regulatory requirements.

Q: What is the significance of package variant differences (TO-247AC vs. TO-247AD vs. TO-247)?

A: All variants are Through Hole TO-247 family packages with three leads (Gate, Drain, Source). TO-247AC, TO-247AD, and TO-247 designations indicate minor manufacturing or thermal interface variations from different manufacturers. Pin configuration and mounting footprint remain compatible for standard TO-247-3 PCB layouts. Verify specific thermal interface requirements with the component datasheet.

Q: Which substitute offers the best switching performance?

A: IXFH230N075T2 specifies the lowest gate charge at 178nC and lowest Rds On at 4.2mOhm (at 50A, 10V), indicating superior switching efficiency. FDH047AN08A0 has the lowest gate charge at 138nC but is limited by current rating. For high-current applications requiring fast switching, IXFH230N075T2 is the optimal choice among the 75V-rated substitutes.

Q: Can I use IXTH200N10T as a direct replacement for AUIRFP2907Z?

A: IXTH200N10T is electrically compatible but operates at 100V instead of 75V. It can be used in 75V applications as a higher-voltage-rated alternative, providing additional design margin. However, if the circuit is specifically designed for 75V operation with no provision for higher voltages, verify that the 100V rating does not introduce compatibility issues with other components or circuit topology.

Q: What inventory status should I consider for procurement?

A: FDH210N08 has 2035 pieces in stock, IXFH230N075T2 has 1057 pieces, IXTH200N10T has 5680 pieces, and FDH047AN08A0 has 3380 pieces. All substitutes are available in active inventory. The original AUIRFP2907Z has 698 pieces listed as New Original but is Obsolete. For long-term design support, select from the Active status substitutes with adequate stock levels.