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AUIRFP2602 Equivalent & Substitute Parts
Part Overview
The AUIRFP2602 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 24V drain-to-source voltage with 180A continuous drain current at 25°C. This device is packaged in TO-247AD through-hole configuration and is designed for high-current switching applications requiring low on-resistance performance.
The AUIRFP2602 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 24 | V |
| Continuous Drain Current (Id) @ 25°C | 180 | A (Tc) |
| On-Resistance (Rds On Max) @ 180A, 10V | 1.6 | mOhm |
| Gate Threshold Voltage (Vgs th Max) @ 250µA | 4 | V |
| Gate Charge (Qg Max) @ 10V | 390 | nC |
| Power Dissipation (Max) | 380 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | Through Hole |
Substitute Part Grouping Explanation
Substitution of the AUIRFP2602 is evaluated based on the following critical parameters that define functional equivalence:
Voltage Rating Compatibility: The substitute part must support the application's maximum drain-to-source voltage requirement. The AUIRFP2602 operates at 24V; substitute parts with higher voltage ratings (such as 100V) are acceptable as they provide voltage margin and are backward-compatible with 24V applications.
Current Handling Capability: The substitute must support continuous drain current equal to or greater than 180A at 25°C to maintain or exceed the original performance envelope.
On-Resistance (Rds On): The substitute's maximum on-resistance must be evaluated at the specified gate voltage (10V) and current conditions. Lower on-resistance values indicate improved efficiency and reduced power dissipation.
Gate Charge (Qg): Gate charge affects switching speed and driver requirements. Substitute parts with comparable or lower gate charge values ensure compatibility with existing gate drive circuits.
Thermal Performance: Power dissipation rating and operating temperature range must support the application's thermal environment.
Package Compatibility: Both the AUIRFP2602 and substitute must use through-hole TO-247 family packaging to ensure mechanical and electrical compatibility with existing PCB layouts.
Parameter Comparison
| Parameter | AUIRFP2602 (Main Part) | IXTH200N10T (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | IXYS | — |
| Product Status | Obsolete | Active | — |
| Drain to Source Voltage (Vdss) | 24 | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 180 | 200 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Rds On (Max) @ Specified Conditions | 1.6 @ 180A, 10V | 5.5 @ 50A, 10V | mOhm |
| Gate Threshold Voltage (Vgs th Max) @ 250µA | 4 | 4.5 | V |
| Gate Charge (Qg Max) @ 10V | 390 | 152 | nC |
| Maximum Gate Voltage (Vgs Max) | ±20 | ±30 | V |
| Power Dissipation (Max) | 380 | 550 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | TO-247-3 | — |
| Mounting Type | Through Hole | Through Hole | — |
| RoHS Status | — | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
The IXTH200N10T is an active substitute for the obsolete AUIRFP2602. Selection is based on the following engineering criteria:
Product Availability: The IXTH200N10T is classified as active with 5680 pieces in stock, compared to the AUIRFP2602's obsolete status. This ensures long-term supply chain continuity.
Voltage Margin: The IXTH200N10T provides a 100V drain-to-source voltage rating, which exceeds the AUIRFP2602's 24V requirement. This higher voltage rating is fully backward-compatible with 24V applications and provides additional design margin.
Current Capability: The IXTH200N10T delivers 200A continuous drain current, exceeding the AUIRFP2602's 180A specification. This provides current headroom for the application.
Regulatory Compliance: The IXTH200N10T is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.
Thermal Performance: The IXTH200N10T's 550W maximum power dissipation rating exceeds the AUIRFP2602's 380W rating, supporting higher thermal loads. Both devices operate across the identical temperature range of -55°C to 175°C.
Package Compatibility: Both devices use TO-247-3 through-hole packaging, ensuring direct mechanical and electrical compatibility with existing PCB designs without layout modifications.
Frequently Asked Questions (FAQ)
Q: Can the IXTH200N10T directly replace the AUIRFP2602 in existing designs?
A: Yes. Both devices use identical TO-247-3 through-hole packaging. The IXTH200N10T's higher voltage rating (100V vs. 24V) and current capability (200A vs. 180A) are fully backward-compatible with applications designed for the AUIRFP2602. No PCB modifications are required.
Q: What is the significance of the voltage rating difference between these parts?
A: The AUIRFP2602 is rated for 24V drain-to-source voltage, while the IXTH200N10T is rated for 100V. In a 24V application, the IXTH200N10T operates well within its voltage specification, providing design margin and protection against voltage transients. Higher voltage-rated MOSFETs are standard substitutes for lower voltage applications.
Q: How do the on-resistance specifications compare?
A: The AUIRFP2602 specifies 1.6 mOhm maximum on-resistance at 180A and 10V gate voltage. The IXTH200N10T specifies 5.5 mOhm maximum on-resistance at 50A and 10V gate voltage. These measurements are taken at different current levels due to device design differences. At the IXTH200N10T's rated 200A continuous current, actual on-resistance performance must be evaluated from the device datasheet. The IXTH200N10T's higher power dissipation rating (550W vs. 380W) indicates adequate thermal capability for the application.
Q: Are gate drive requirements compatible?
A: Yes. Both devices specify a 10V drive voltage for maximum on-resistance performance and share similar gate threshold voltage specifications (4V for AUIRFP2602, 4.5V for IXTH200N10T). The IXTH200N10T's lower gate charge (152 nC vs. 390 nC) may allow faster switching with the same gate driver, but existing drivers designed for the AUIRFP2602 will function correctly.
Q: What are the compliance and regulatory considerations?
A: The IXTH200N10T is ROHS3 compliant and REACH unaffected. The AUIRFP2602 is REACH unaffected. Both share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring equivalent export and regulatory treatment.
Q: Why is the AUIRFP2602 classified as obsolete?
A: Obsolescence indicates that the manufacturer (Infineon Technologies) has discontinued production. The IXTH200N10T, classified as active, ensures continued availability and support for applications requiring this device category.
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