AUIRF1010Z N-Channel MOSFET 55V 75A Equivalent & Substitute Parts

Part Overview

The AUIRF1010Z is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications with a 55V drain-to-source voltage rating and 75A continuous drain current capability. This device features the HEXFET® series technology and is housed in a TO-220AB through-hole package.

The AUIRF1010Z is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 75A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Input Capacitance (Ciss) @ 25V	2840	pF
Power Dissipation (Max)	140	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the AUIRF1010Z is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 55V
Continuous Drain Current (Id): Must be equal to or greater than 75A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V @ 250µA
Package Type: Must be TO-220-3 or compatible through-hole TO-220 variant
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Higher ratings provide thermal margin
Gate Charge (Qg): Affects switching speed and driver requirements
RoHS and REACH Compliance: Must maintain regulatory compliance

The substitute parts listed below satisfy the primary substitution criteria and maintain electrical and mechanical compatibility with the AUIRF1010Z.

Parameter Comparison

Parameter	AUIRF1010Z (Main)	HUF75344P3	HUF75345P3	STP100N6F7	STP80NF55-06
Manufacturer	Infineon	onsemi	onsemi	STMicroelectronics	STMicroelectronics
Vdss (V)	55	55	55	60	55
Id @ 25°C (A)	75	75	75	100	80
Rds On @ Id, 10V (mOhm)	7.5	8	7	5.6	6.5
Vgs(th) @ 250µA (V)	4	4	4	4	4
Qg @ 10V (nC)	95	210	275	30	189
Ciss @ 25V (pF)	2840	3200	4000	1980	4400
Power Dissipation (W)	140	285	325	125	300
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

HUF75344P3 (onsemi UltraFET™)

The HUF75344P3 provides direct electrical equivalence to the AUIRF1010Z with matching Vdss (55V) and Id (75A) ratings. This part is classified as Active product status, ensuring long-term availability and supply chain stability. The device maintains ROHS3 compliance and operates across the identical temperature range. The slightly higher Rds On (8mOhm versus 7.5mOhm) represents a marginal performance difference. This substitute is suitable for direct replacement in applications where the original AUIRF1010Z specifications are required.

HUF75345P3 (onsemi UltraFET™)

The HUF75345P3 offers superior performance characteristics compared to the AUIRF1010Z, with improved Rds On (7mOhm) and significantly higher power dissipation capability (325W). Electrical ratings remain identical at 55V and 75A. Active product status and ROHS3 compliance ensure regulatory and supply continuity. This substitute is recommended for applications requiring enhanced thermal performance or where lower on-state losses are beneficial.

STP100N6F7 (STMicroelectronics STripFET™ F7)

The STP100N6F7 provides higher current capability (100A) and voltage rating (60V) compared to the AUIRF1010Z. The superior Rds On (5.6mOhm) and lower gate charge (30nC) offer improved switching efficiency. This device is suitable for applications where higher current margins or enhanced performance are required. Active product status and ROHS3 compliance are maintained. Pin compatibility with TO-220-3 package is confirmed.

STP80NF55-06 (STMicroelectronics STripFET™ II)

The STP80NF55-06 matches the Vdss rating (55V) and exceeds the continuous drain current specification (80A versus 75A). The Rds On (6.5mOhm) is superior to the AUIRF1010Z, and power dissipation capability (300W) provides significant thermal margin. Active product status and ROHS3 compliance ensure supply availability and regulatory compliance. This substitute is appropriate for applications requiring modest current margin and improved thermal characteristics.

Frequently Asked Questions (FAQ)

Q: Can the HUF75344P3 be used as a direct replacement for the AUIRF1010Z?

A: Yes. The HUF75344P3 meets all primary substitution criteria: identical Vdss (55V), Id (75A), Vgs(th) (4V), and TO-220-3 package configuration. The device is electrically compatible and maintains the same operating temperature range. Active product status ensures ongoing availability.

Q: What is the difference between the HUF75344P3 and HUF75345P3?

A: Both devices share identical electrical ratings (55V, 75A). The HUF75345P3 provides improved Rds On (7mOhm versus 8mOhm) and higher power dissipation capability (325W versus 285W). Selection between these two depends on thermal requirements and efficiency priorities in the application.

Q: Why does the STP100N6F7 have different voltage and current ratings?

A: The STP100N6F7 is a higher-performance device with 60V Vdss and 100A Id ratings. It qualifies as a substitute because it exceeds the AUIRF1010Z specifications in both parameters, ensuring compatibility in applications designed for 55V/75A. The superior Rds On and lower gate charge provide additional performance benefits.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts (HUF75344P3, HUF75345P3, STP100N6F7, STP80NF55-06) are ROHS3 compliant, matching the compliance status of the AUIRF1010Z.

Q: What is the significance of the gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. Lower Qg values (such as the 30nC in STP100N6F7) enable faster switching and reduce driver power dissipation. Higher Qg values require longer switching times but may provide improved noise immunity. Selection depends on the specific application's switching frequency and driver capabilities.

Q: Can I use the STP80NF55-06 in place of the AUIRF1010Z?

A: Yes. The STP80NF55-06 meets substitution criteria with matching 55V Vdss and exceeding 75A requirement (80A rating). The improved Rds On (6.5mOhm) and higher power dissipation (300W) provide performance advantages. Pin configuration and package type (TO-220-3) are compatible.

Q: What should I verify before implementing a substitute part?

A: Verify gate drive voltage compatibility (all substitutes operate at 10V drive), confirm PCB layout accommodates the TO-220-3 package, and validate thermal management design supports the substitute's power dissipation characteristics. All listed substitutes maintain -55°C to 175°C operating range compatibility.

Q: Why is the AUIRF1010Z classified as obsolete?

A: Obsolete status indicates the manufacturer (Infineon) has discontinued production. The listed substitute parts from active manufacturers (onsemi and STMicroelectronics) provide equivalent or superior functionality with assured long-term availability.

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