ATP602-TL-H Equivalent & Substitute Parts

Part Overview

The ATP602-TL-H is an N-Channel 600V 5A MOSFET manufactured by onsemi in ATPAK surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. The ATP602-TL-H serves in applications requiring high-voltage switching with moderate current handling in a compact surface mount form factor. Due to its obsolete status, equivalent parts from active product lines provide continuity for system maintenance and new production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	5	A (Ta)
RDS(on) Max @ Id, Vgs	2.7	Ω @ 2.5A, 10V
Gate Charge (Qg) @ Vgs	13.6	nC @ 10V
Power Dissipation (Max)	70	W (Tc)
Operating Temperature (TJ)	150	°C
Vgs (Max)	±30	V
Input Capacitance (Ciss) @ Vds	350	pF @ 30V
Mounting Type	Surface Mount	—
Package	ATPAK (2 Leads+Tab)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the ATP602-TL-H is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 5A or greater at rated temperature
RDS(on) @ 10V gate drive: 2.7Ω or lower to maintain switching efficiency
Power Dissipation: 70W or greater thermal capability
Gate Charge (Qg): 13.6nC or lower for driver compatibility
Vgs (Max): ±30V or greater for gate drive margin
Operating Temperature: 150°C or higher
Mounting Type: Surface Mount
Package Compatibility: ATPAK or equivalent footprint

Substitute parts are grouped into two categories based on current rating and thermal performance:

Category A – Direct Current Equivalents (4A to 5A): Parts meeting or exceeding 5A continuous drain current with 70W+ power dissipation. These provide direct functional replacement with minimal circuit redesign.

Category B – Reduced Current Alternatives (2.4A to 3.8A): Parts with lower continuous drain current but acceptable RDS(on) and thermal characteristics. These require circuit verification for current margin adequacy.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	RDS(on) Max (Ω)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
ATP602-TL-H	onsemi	600	5 (Ta)	2.7 @ 2.5A, 10V	13.6	70 (Tc)	ATPAK	Obsolete
FDD5N60NZTM	onsemi	600	4 (Tc)	2.0 @ 2A, 10V	13	83 (Tc)	TO-252-3 (DPAK)	Active
FQD5N60CTM	onsemi	600	2.8 (Tc)	2.5 @ 1.4A, 10V	19	49 (Tc)	TO-252-3 (DPAK)	Active
STD3N62K3	STMicroelectronics	620	2.7 (Tc)	2.5 @ 1.4A, 10V	13	45 (Tc)	TO-252-3 (DPAK)	Active
STD3NK60ZT4	STMicroelectronics	600	2.4 (Tc)	3.6 @ 1.2A, 10V	11.8	45 (Tc)	TO-252-3 (DPAK)	Not For New Designs
STD4N62K3	STMicroelectronics	620	3.8 (Tc)	1.95 @ 1.9A, 10V	14	70 (Tc)	TO-252-3 (DPAK)	Active
TK4P60DA(T6RSS-Q)	Toshiba	600	3.5 (Ta)	2.2 @ 1.8A, 10V	11	80 (Tc)	TO-252-3 (DPAK)	Active
TK4P60DB(T6RSS-Q)	Toshiba	600	3.7 (Ta)	2.0 @ 1.9A, 10V	11	80 (Tc)	TO-252-3 (DPAK)	Active

Engineering Selection Recommendations

Category A – Recommended Primary Substitutes:

FDD5N60NZTM (onsemi): This part provides the closest electrical match with 4A continuous drain current, superior RDS(on) of 2.0Ω, and 83W power dissipation. The UniFET-II™ series device is active and RoHS3 compliant. Package transition from ATPAK to TO-252-3 (DPAK) requires PCB layout modification. Gate charge of 13nC maintains driver compatibility. Operating temperature range of −55°C to 150°C exceeds the ATP602-TL-H specification.

STD4N62K3 (STMicroelectronics): This SuperMESH3™ device delivers 3.8A continuous current with 70W power dissipation matching the ATP602-TL-H thermal capability. RDS(on) of 1.95Ω provides superior switching efficiency. Vdss of 620V provides additional voltage margin. Active product status and RoHS3 compliance support long-term availability. Package is TO-252-3 (DPAK).

Category B – Alternative Substitutes for Current-Reduced Applications:

TK4P60DB(T6RSS-Q) (Toshiba): The π-MOSVII series device offers 3.7A continuous current with 80W power dissipation and 2.0Ω RDS(on). Active product status and RoHS compliance ensure availability. Gate charge of 11nC is favorable for driver circuits. Package is TO-252-3 (DPAK).

TK4P60DA(T6RSS-Q) (Toshiba): Similar to TK4P60DB with 3.5A continuous current and 80W power dissipation. RDS(on) of 2.2Ω and gate charge of 11nC provide acceptable performance. Active status and RoHS compliance confirmed.

Not Recommended:

STD3NK60ZT4 (STMicroelectronics): Product status is "Not For New Designs." Although electrical parameters are acceptable, this designation indicates manufacturer discontinuation trajectory and should be avoided for new applications.

FQD5N60CTM (onsemi): Continuous drain current of 2.8A and power dissipation of 49W fall below ATP602-TL-H specifications. Gate charge of 19nC exceeds the original part, potentially requiring driver circuit adjustment. Suitable only for applications with reduced current requirements.

STD3N62K3 (STMicroelectronics): Continuous drain current of 2.7A and power dissipation of 45W are insufficient for direct replacement. Acceptable only for reduced-current applications.

Frequently Asked Questions (FAQ)

Q: Can FDD5N60NZTM directly replace ATP602-TL-H without circuit modification?

A: FDD5N60NZTM provides electrical compatibility with 4A continuous current, 2.0Ω RDS(on), and 83W power dissipation. However, package transition from ATPAK to TO-252-3 (DPAK) requires PCB layout redesign. Electrical performance is superior, supporting direct functional replacement with layout changes.

Q: What is the primary difference between Category A and Category B substitutes?

A: Category A substitutes (FDD5N60NZTM, STD4N62K3) maintain 4A or greater continuous drain current with 70W+ power dissipation, providing direct functional replacement. Category B substitutes (TK4P60DA, TK4P60DB, STD3N62K3, FQD5N60CTM) operate at 2.4A to 3.8A continuous current and require circuit verification to confirm adequate current margin for the application.

Q: Why is STD3NK60ZT4 not recommended despite acceptable electrical parameters?

A: STD3NK60ZT4 carries a product status designation of "Not For New Designs," indicating the manufacturer has discontinued active support. This status signals potential future unavailability and obsolescence risk, making it unsuitable for new applications or long-term production.

Q: How does package change from ATPAK to DPAK affect circuit design?

A: ATPAK and DPAK (TO-252-3) are distinct surface mount packages with different footprints, lead spacing, and thermal characteristics. PCB layout must be redesigned to accommodate the new package geometry. Thermal performance may differ due to package construction variations. Mechanical fit and thermal management must be re-evaluated.

Q: Are all substitute parts RoHS compliant?

A: FDD5N60NZTM, FQD5N60CTM, STD3N62K3, STD3NK60ZT4, and STD4N62K3 are RoHS3 compliant. TK4P60DA and TK4P60DB are RoHS compliant. ATP602-TL-H REACH status is unaffected. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. ATP602-TL-H specifies 13.6nC at 10V. Substitute parts range from 11nC to 19nC. Lower gate charge (11nC to 13nC) reduces driver power dissipation and switching losses. Higher gate charge (19nC) may require driver circuit verification to ensure adequate gate current capability.

Q: Can parts with lower Vdss (600V) substitute for ATP602-TL-H (600V)?

A: Yes, provided the substitute maintains 600V or greater Vdss. STD3NK60ZT4 and FQD5N60CTM specify exactly 600V. STD3N62K3 and STD4N62K3 specify 620V, providing additional voltage margin. TK4P60DA and TK4P60DB specify 600V. All are electrically compatible at the voltage rating level.

Q: What thermal considerations apply when selecting a substitute?

A: ATP602-TL-H specifies 70W power dissipation at case temperature (Tc). FDD5N60NZTM provides 83W, STD4N62K3 provides 70W, and Toshiba parts provide 80W, all supporting equivalent or superior thermal performance. Lower-rated parts (FQD5N60CTM at 49W, STD3N62K3 at 45W) require thermal analysis to confirm adequate heat dissipation in the application.

Q: Is operating temperature range a critical substitution parameter?

A: ATP602-TL-H specifies 150°C maximum junction temperature (TJ). FDD5N60NZTM extends to −55°C to 150°C, providing wider operating range. STD3NK60ZT4 also provides −55°C to 150°C. Other parts specify 150°C maximum. For applications within 0°C to 150°C range, all substitutes are acceptable. Extended low-temperature operation requires parts with −55°C minimum rating.

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