ATP405-TL-H Equivalent & Substitute Parts

Part Overview

The ATP405-TL-H is an N-Channel 100V 40A surface mount MOSFET manufactured by onsemi in the ATPAK package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production requirements. The ATP405-TL-H delivers 70W maximum power dissipation at case temperature and operates across a junction temperature range to 150°C. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, gate charge characteristics, and thermal performance parameters while accommodating package form factor variations.

Key Parameters

Parameter	ATP405-TL-H	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	40	A (Ta)
Rds On (Max) @ Id, Vgs	33	mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs	68	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4000	pF @ 20V
Power Dissipation (Max)	70	W (Tc)
Operating Temperature (TJ)	150	°C
Vgs (Max)	±20	V
Package Type	ATPAK	2 Leads + Tab
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the ATP405-TL-H is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 100V (exact match required)
Continuous Drain Current (Id): Minimum 40A at 25°C to maintain current-handling equivalence
Gate Charge (Qg): Maximum 68nC at 10V to preserve switching characteristics
Input Capacitance (Ciss): Maximum 4000pF at specified voltage to ensure gate drive compatibility
Vgs (Max): ±20V (exact match required)
RoHS3 Compliance and MSL Level 1 (Unlimited) for manufacturing compatibility

Package Considerations: The ATP405-TL-H uses the ATPAK package. Substitute parts may employ alternative surface mount packages (TO-252AA/DPAK, SC-63) provided thermal and electrical performance remain within specified limits. Package transitions require PCB layout verification but do not disqualify electrical equivalence.

Active vs. Obsolete Status: Substitute parts with Active product status provide long-term availability and supply chain continuity compared to the obsolete ATP405-TL-H.

Parameter Comparison

Parameter	ATP405-TL-H	FDD3670	IRFR540ZTRLPBF	STD25N10F7	SUD35N10-26P-GE3	Unit
Manufacturer	onsemi	onsemi	Infineon Technologies	STMicroelectronics	Vishay Siliconix	—
Drain to Source Voltage (Vdss)	100	100	100	100	100	V
Continuous Drain Current (Id) @ 25°C	40 (Ta)	34 (Ta)	35 (Tc)	25 (Tc)	35 (Tc)	A
Rds On (Max) @ Id, Vgs	33 @ 20A, 10V	32 @ 7.3A, 10V	28.5 @ 21A, 10V	35 @ 12.5A, 10V	26 @ 12A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	68 @ 10V	80 @ 10V	59 @ 10V	14 @ 10V	47 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	4000 @ 20V	2490 @ 50V	1690 @ 25V	920 @ 50V	2000 @ 12V	pF
Power Dissipation (Max)	70 (Tc)	83 (Tc)	91 (Tc)	40 (Tc)	83 (Tc)	W
Operating Temperature (TJ)	150	-55 ~ 175	-55 ~ 175	-55 ~ 175	-55 ~ 175	°C
Vgs (Max)	±20	±20	±20	±20	±20	V
Package Type	ATPAK	TO-252AA (DPAK)	TO-252AA (DPAK)	DPAK	TO-252AA (DPAK)	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	—
MSL Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

Primary Substitute: IRFR540ZTRLPBF (Infineon Technologies)

The IRFR540ZTRLPBF is the preferred substitute for the ATP405-TL-H. This device maintains the 100V Vdss rating and delivers 35A continuous drain current, representing a 12.5% reduction from the ATP405-TL-H specification. The IRFR540ZTRLPBF exhibits superior on-resistance performance (28.5mOhm vs. 33mOhm) and lower gate charge (59nC vs. 68nC), resulting in improved switching efficiency and reduced gate drive requirements. Power dissipation capability reaches 91W at case temperature, exceeding the ATP405-TL-H by 30%. The device operates across -55°C to 175°C, providing extended low-temperature performance. Active product status ensures long-term availability. The TO-252AA (DPAK) package requires PCB layout modification but maintains thermal performance through equivalent tab-to-case thermal interface.

Secondary Substitute: SUD35N10-26P-GE3 (Vishay Siliconix)

The SUD35N10-26P-GE3 provides equivalent 35A continuous drain current and 100V Vdss rating. This device demonstrates the lowest on-resistance specification (26mOhm @ 12A, 10V) among substitute candidates, delivering superior conduction efficiency. Gate charge of 47nC is substantially lower than the ATP405-TL-H, reducing switching losses. Power dissipation reaches 83W at case temperature. The TrenchFET® technology series ensures active product status and extended operating temperature range (-55°C to 175°C). Tape & Reel packaging accommodates high-volume production requirements.

Tertiary Substitute: FDD3670 (onsemi)

The FDD3670 maintains onsemi manufacturing continuity and delivers 34A continuous drain current with 100V Vdss. On-resistance of 32mOhm closely matches the ATP405-TL-H specification. Gate charge of 80nC exceeds the ATP405-TL-H by 12nC, requiring verification of gate drive circuit capability. Power dissipation reaches 83W at case temperature. Active product status and PowerTrench® technology series provide supply chain stability. The TO-252AA package aligns with industry-standard thermal management practices.

Not Recommended: STD25N10F7 (STMicroelectronics)

The STD25N10F7 exhibits continuous drain current of 25A, representing a 37.5% reduction from the ATP405-TL-H specification. This current limitation disqualifies the device for applications requiring the full 40A rating. While on-resistance and gate charge characteristics remain acceptable, the reduced current capacity creates unacceptable design margin erosion. This device is suitable only for applications with reduced current requirements below 25A.

Frequently Asked Questions (FAQ)

Q: Can the ATP405-TL-H be directly replaced with the IRFR540ZTRLPBF without circuit modification?

A: Electrical substitution is direct. The IRFR540ZTRLPBF maintains 100V Vdss, ±20V Vgs maximum, and gate charge within acceptable limits. However, the package transition from ATPAK to TO-252AA (DPAK) requires PCB layout modification. The tab-to-case thermal interface remains functionally equivalent, but trace routing and thermal via placement must be verified for the new package footprint.

Q: What is the significance of the 40A vs. 35A continuous drain current difference?

A: The ATP405-TL-H is rated for 40A continuous drain current at 25°C ambient temperature. Substitute parts rated at 35A provide 87.5% of the original current capacity. For applications operating at or near the 40A specification, this reduction may require thermal management review or circuit redesign. Applications with design margins below 40A can accommodate 35A-rated substitutes without performance impact.

Q: Why does the STD25N10F7 appear in the substitute list if it is not recommended?

A: The STD25N10F7 meets the primary electrical criteria (100V Vdss, ±20V Vgs, RoHS3 compliance, MSL Level 1) but fails the continuous drain current requirement of 40A. The device is listed for reference and may serve as a substitute only in applications with reduced current requirements. Engineering review is required to confirm suitability for specific circuit implementations.

Q: How do package differences affect thermal performance?

A: The ATP405-TL-H uses the ATPAK package; substitute parts employ TO-252AA (DPAK) or equivalent surface mount packages. All packages feature a tab-to-case thermal interface rated for equivalent thermal resistance. PCB thermal design—including copper area, thermal vias, and solder pad geometry—determines actual junction temperature. Package transition does not inherently degrade thermal performance if PCB layout follows manufacturer guidelines for the new package.

Q: Are all substitute parts RoHS3 compliant and MSL Level 1?

A: Yes. All substitute parts listed meet RoHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity specifications, matching the ATP405-TL-H requirements. This ensures compatibility with standard manufacturing processes and long-term storage without desiccant requirements.

Q: What is the impact of gate charge differences on circuit design?

A: The ATP405-TL-H specifies 68nC gate charge at 10V. Substitute parts range from 14nC (STD25N10F7) to 80nC (FDD3670). Lower gate charge reduces switching losses and gate drive power consumption. Higher gate charge (FDD3670 at 80nC) requires verification that the gate drive circuit can supply sufficient current within the switching time window. Gate drive circuit redesign is typically not required for gate charge variations within ±20nC of the original specification.

Q: Can multiple substitute parts be used interchangeably in production?

A: Substitution strategy depends on circuit design margins and production requirements. If the design accommodates 35A continuous drain current and the gate drive circuit handles gate charge variations up to 80nC, multiple substitute parts (IRFR540ZTRLPBF, SUD35N10-26P-GE3, FDD3670) can be qualified for interchangeable use. This approach provides supply chain flexibility. However, each substitute part must undergo formal design verification and thermal testing before production release.

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