ATP404-TL-H N-Channel 60V 95A MOSFET Equivalent & Substitute Parts

Part Overview

The ATP404-TL-H is an N-Channel 60V 95A surface mount MOSFET manufactured by onsemi in the ATPAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The ATP404-TL-H delivers 70W power dissipation at case temperature and operates at a maximum junction temperature of 150°C. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge specifications while accommodating package and thermal performance differences.

Key Parameters

Parameter	ATP404-TL-H	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	95	A (Ta)
Rds On (Max) @ Id, Vgs	7.2	mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs	120	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	6400	pF @ 20V
Power Dissipation (Max)	70	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	ATPAK (2 Leads+Tab)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the ATP404-TL-H is determined by the following critical electrical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must support the application's current requirements
On-Resistance (Rds On): Must be compatible with thermal and efficiency constraints
Gate Charge (Qg): Affects switching speed and driver requirements
Maximum Gate Voltage (Vgs): Must accommodate ±20V or greater
Input Capacitance (Ciss): Influences gate drive circuit design

Secondary Considerations:

Operating temperature range and thermal performance
Package type and thermal characteristics
Product status and long-term availability
Compliance certifications (RoHS, REACH)

The substitute parts listed below maintain the 60V Vdss rating and N-Channel MOSFET topology. Variations in continuous drain current, on-resistance, and package type reflect different thermal management capabilities and application suitability. All substitutes are surface mount devices with compatible gate voltage ratings.

Parameter Comparison

Parameter	ATP404-TL-H	AOD2606	IPD50N06S4L08ATMA2	IRLR3636TRLPBF	IRLR3636TRPBF	Unit
Manufacturer	onsemi	Alpha & Omega Semiconductor Inc.	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	60	60	60	60	60	V
Continuous Drain Current (Id) @ 25°C	95 (Ta)	14 (Ta), 46 (Tc)	50 (Tc)	50 (Tc)	50 (Tc)	A
Rds On (Max) @ Id, Vgs	7.2 @ 48A, 10V	6.8 @ 20A, 10V	7.8 @ 50A, 10V	6.8 @ 50A, 10V	6.8 @ 50A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	120 @ 10V	75 @ 10V	64 @ 10V	49 @ 4.5V	49 @ 4.5V	nC
Vgs (Max)	±20	±20	±16	±16	±16	V
Input Capacitance (Ciss) (Max) @ Vds	6400 @ 20V	4050 @ 30V	4780 @ 25V	3779 @ 50V	3779 @ 50V	pF
Power Dissipation (Max)	70 (Tc)	2.5 (Ta), 150 (Tc)	71 (Tc)	143 (Tc)	143 (Tc)	W
Operating Temperature (TJ)	150	−55 to 175	−55 to 175	−55 to 175	−55 to 175	°C
Package / Case	ATPAK (2 Leads+Tab)	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

AOD2606 (Alpha & Omega Semiconductor Inc.)

The AOD2606 is an active product with ROHS3 compliance and REACH unaffected status. This device operates across an extended temperature range of −55°C to 175°C, exceeding the ATP404-TL-H operating window. The continuous drain current rating of 46A (Tc) is substantially lower than the ATP404-TL-H at 95A, limiting its application to lower-current designs. On-resistance of 6.8 mOhm at 20A, 10V is favorable. Gate charge of 75 nC at 10V is lower than the ATP404-TL-H, reducing gate drive requirements. Power dissipation capability of 150W (Tc) supports thermal management in compact layouts. Package compatibility with TO-252 (DPAK) requires PCB redesign from the ATPAK footprint.

IPD50N06S4L08ATMA2 (Infineon Technologies)

The IPD50N06S4L08ATMA2 is an active Infineon OptiMOS™ device with AEC-Q101 automotive qualification and ROHS3 compliance. Operating temperature range of −55°C to 175°C exceeds ATP404-TL-H specifications. Continuous drain current of 50A (Tc) is lower than the ATP404-TL-H but suitable for moderate-current applications. On-resistance of 7.8 mOhm at 50A, 10V is comparable to the ATP404-TL-H. Gate charge of 64 nC at 10V is significantly lower, improving switching efficiency. Power dissipation of 71W (Tc) closely matches the ATP404-TL-H thermal capability. Automotive qualification provides additional reliability assurance. Package is TO-252-3 (DPAK), requiring footprint modification.

IRLR3636TRLPBF (Infineon Technologies)

The IRLR3636TRLPBF is an active Infineon HEXFET® device with ROHS3 compliance and extended operating temperature range of −55°C to 175°C. Continuous drain current of 50A (Tc) is lower than the ATP404-TL-H. On-resistance of 6.8 mOhm at 50A, 10V is favorable. Gate charge of 49 nC at 4.5V is substantially lower than the ATP404-TL-H, enabling faster switching and reduced gate drive power. Power dissipation of 143W (Tc) exceeds the ATP404-TL-H, providing superior thermal performance. Input capacitance of 3779 pF at 50V is lower, reducing switching losses. Tape & Reel packaging supports high-volume production. Package is TO-252-3 (DPAK), requiring footprint redesign.

IRLR3636TRPBF (Infineon Technologies)

The IRLR3636TRPBF is an active Infineon HEXFET® device with identical electrical specifications to the IRLR3636TRLPBF. ROHS3 compliance and REACH unaffected status are confirmed. Operating temperature range of −55°C to 175°C exceeds ATP404-TL-H. Continuous drain current of 50A (Tc), on-resistance of 6.8 mOhm at 50A, 10V, and gate charge of 49 nC at 4.5V match the IRLR3636TRLPBF. Power dissipation of 143W (Tc) and input capacitance of 3779 pF at 50V are identical. Packaging differs as Cut Tape (CT) & Digi-Reel® format, suitable for lower-volume or manual assembly operations. Package is TO-252-3 (DPAK), requiring footprint modification.

Frequently Asked Questions (FAQ)

Q: Why is the ATP404-TL-H classified as obsolete?

A: The ATP404-TL-H is listed as obsolete by onsemi, indicating discontinued production and limited long-term availability. Substitute parts ensure design continuity and supply chain reliability for new production and maintenance applications.

Q: Can I directly replace the ATP404-TL-H with any of these substitutes without PCB modification?

A: No. The ATP404-TL-H uses the ATPAK package, while all listed substitutes use the TO-252-3 (DPAK) package. PCB footprint redesign is required. Pin configuration and thermal tab placement differ between packages.

Q: Which substitute part most closely matches the ATP404-TL-H current rating?

A: None of the listed substitutes match the 95A continuous drain current of the ATP404-TL-H. The IRLR3636TRLPBF and IRLR3636TRPBF deliver 50A (Tc), while the IPD50N06S4L08ATMA2 also provides 50A (Tc). The AOD2606 is rated at 46A (Tc). Applications requiring the full 95A capability require alternative sourcing or parallel device configurations.

Q: What is the significance of the lower gate charge in the IRLR3636 devices?

A: Gate charge of 49 nC at 4.5V in the IRLR3636TRLPBF and IRLR3636TRPBF, compared to 120 nC at 10V in the ATP404-TL-H, indicates faster switching transitions and reduced gate drive power dissipation. This improves overall circuit efficiency and reduces thermal stress on gate driver circuits.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The ATP404-TL-H compliance status is not specified in the provided data.

Q: Which substitute offers the best thermal performance?

A: The IRLR3636TRLPBF and IRLR3636TRPBF offer the highest power dissipation capability at 143W (Tc), compared to 70W (Tc) for the ATP404-TL-H and 71W (Tc) for the IPD50N06S4L08ATMA2. The AOD2606 provides 150W (Tc) but at significantly lower current ratings.

Q: Is the IPD50N06S4L08ATMA2 suitable for automotive applications?

A: Yes. The IPD50N06S4L08ATMA2 carries AEC-Q101 automotive qualification, making it suitable for automotive-grade designs. The other substitutes do not specify automotive qualification.

Q: What is the difference between IRLR3636TRLPBF and IRLR3636TRPBF?

A: Both devices have identical electrical specifications and performance characteristics. The difference is in packaging format: IRLR3636TRLPBF is supplied in Tape & Reel (TR) format for automated assembly, while IRLR3636TRPBF is supplied in Cut Tape (CT) & Digi-Reel® format for lower-volume or manual assembly operations.

Q: Can I use multiple substitute parts in parallel to achieve higher current capacity?

A: Parallel operation of MOSFETs requires careful circuit design to ensure balanced current distribution and thermal management. This approach is outside the scope of direct substitution and requires detailed thermal and electrical analysis specific to your application.

Q: What is the operating temperature advantage of the substitute parts?

A: All substitute parts operate across −55°C to 175°C, compared to the ATP404-TL-H maximum junction temperature of 150°C. This extended upper temperature limit provides additional thermal margin in high-temperature environments.

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