ATP302-TL-H P-Channel MOSFET 60V 70A Equivalent & Substitute Parts

Part Overview

The ATP302-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 70A continuous drain current in Surface Mount ATPAK packaging. This device is classified as Obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. The ATP302-TL-H delivers 70W maximum power dissipation and operates at junction temperatures up to 150°C, suitable for power switching applications requiring P-Channel enhancement-mode operation.

Substiute Parts

ATP302-TL-H

onsemiIn Stock: 1573ATP302-TL-H Datasheet

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ATP304-TL-H

onsemiIn Stock: 2024ATP304-TL-H Datasheet

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TJ50S06M3L(T6L1,NQ

Toshiba Semiconductor and StorageIn Stock: 3146TJ50S06M3L(T6L1,NQ Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ATP302-TL-H is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 60V
• Continuous Drain Current (Id) must meet or exceed 70A at 25°C
• On-State Resistance (Rds On) must not exceed specified maximum values to maintain thermal performance
• Gate Voltage (Vgs) rating must accommodate ±20V operation
• Power Dissipation capability must support application thermal requirements

Mechanical Compatibility Requirements:

• Surface Mount mounting type
• Package footprint compatibility (ATPAK or equivalent lead configuration)

Compliance Requirements:

• ROHS3 Compliant status
• EAR99 ECCN classification
• Moisture Sensitivity Level 1 (Unlimited)

Two substitute parts meet these criteria with varying performance characteristics and availability status.

Parameter Comparison

Engineering Selection Recommendations

ATP304-TL-H (onsemi) — Primary Substitute

The ATP304-TL-H is the preferred substitute for the obsolete ATP302-TL-H. Both devices share identical ATPAK packaging, identical Vdss rating (60V), and identical Vgs maximum rating (±20V). The ATP304-TL-H provides 100A continuous drain current, exceeding the ATP302-TL-H specification of 70A, with superior on-state resistance performance (6.5 mOhm vs. 13 mOhm). Power dissipation capability increases to 90W. The ATP304-TL-H maintains Active product status with ROHS3 compliance and unlimited moisture sensitivity rating. Inventory availability is confirmed at 1999 pieces. Package footprint compatibility is direct due to identical ATPAK configuration.

TJ50S06M3L(T6L1,NQ (Toshiba) — Secondary Substitute

The TJ50S06M3L(T6L1,NQ is an alternative substitute manufactured by Toshiba Semiconductor and Storage. This device meets the 60V Vdss requirement and delivers 50A continuous drain current, which is below the ATP302-TL-H specification of 70A. On-state resistance is 13.8 mOhm, comparable to the main part. The TJ50S06M3L(T6L1,NQ operates at maximum junction temperature of 175°C, exceeding the ATP302-TL-H rating of 150°C. Package configuration differs (DPAK/TO-252-3 vs. ATPAK), requiring PCB layout modification. Vgs maximum rating is asymmetrical (+10V, -20V) compared to the symmetric ±20V of the main part. Active product status and ROHS3 compliance are confirmed. Inventory availability is 3129 pieces.

Selection Criteria:

For direct replacement with identical package footprint and superior electrical performance, select ATP304-TL-H. For applications where drain current requirement is below 70A and PCB layout modification is acceptable, TJ50S06M3L(T6L1,NQ provides an alternative with extended temperature rating.

Frequently Asked Questions (FAQ)

Q: Can the ATP304-TL-H directly replace the ATP302-TL-H without PCB modification?

A: Yes. Both devices use identical ATPAK packaging with 2 leads plus tab configuration. Pin-to-pin compatibility is direct. No PCB layout changes are required.

Q: What is the primary advantage of ATP304-TL-H over ATP302-TL-H?

A: The ATP304-TL-H provides 100A continuous drain current versus 70A in the ATP302-TL-H, with lower on-state resistance (6.5 mOhm vs. 13 mOhm at comparable conditions). Higher power dissipation capability (90W vs. 70W) supports increased thermal margin.

Q: Is the TJ50S06M3L(T6L1,NQ suitable for applications requiring 70A continuous drain current?

A: No. The TJ50S06M3L(T6L1,NQ is rated for 50A continuous drain current, which is below the ATP302-TL-H specification. This device is suitable only for applications with drain current requirements of 50A or less.

Q: What package modification is required to use TJ50S06M3L(T6L1,NQ?

A: The TJ50S06M3L(T6L1,NQ uses DPAK/TO-252-3 packaging, while the ATP302-TL-H uses ATPAK. PCB footprint and land pattern must be redesigned to accommodate the different package geometry. Lead spacing and tab configuration differ between these package types.

Q: Are all three devices ROHS3 compliant?

A: Yes. ATP302-TL-H, ATP304-TL-H, and TJ50S06M3L(T6L1,NQ are all ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Q: What is the maximum gate voltage for each device?

A: ATP302-TL-H and ATP304-TL-H both support ±20V gate voltage. TJ50S06M3L(T6L1,NQ supports asymmetrical gate voltage of +10V and -20V. Applications requiring symmetric ±20V gate drive must use onsemi devices.

Q: Which substitute has the lowest on-state resistance?

A: ATP304-TL-H provides the lowest on-state resistance at 6.5 mOhm (measured at 50A, 10V gate voltage), compared to 13 mOhm for ATP302-TL-H and 13.8 mOhm for TJ50S06M3L(T6L1,NQ.

Q: What is the product status of each device?

A: ATP302-TL-H is Obsolete. ATP304-TL-H and TJ50S06M3L(T6L1,NQ are both Active, ensuring long-term availability and continued manufacturing support.