ATP218-TL-H N-Channel MOSFET 30V 100A Equivalent & Substitute Parts

Part Overview

The ATP218-TL-H is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 100A continuous drain current in a surface mount ATPAK package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The part delivers 60W maximum power dissipation and operates at junction temperatures up to 150°C, serving applications requiring high-current switching in compact form factors.

Substiute Parts

ATP218-TL-H

onsemiIn Stock: 923ATP218-TL-H Datasheet

Current PartRFQ

IPD040N03LGATMA1

Infineon TechnologiesIn Stock: 1111IPD040N03LGATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ATP218-TL-H is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel topology
• Drain-to-Source Voltage (Vdss): Minimum 30V rating
• Continuous Drain Current (Id): Minimum 90A at rated temperature
• On-State Resistance (Rds On): Comparable or lower values to maintain switching efficiency
• Power Dissipation: Minimum 60W capability
• Gate Voltage Compatibility: Vgs rating of ±10V or greater
• Mounting Type: Surface mount configuration
• Package Compatibility: Electrical and thermal performance equivalence

The IPD040N03LGATMA1 from Infineon Technologies meets these criteria with a 30V rating, 90A continuous drain current, and superior power dissipation of 79W. While the package differs (TO-252-3 versus ATPAK), the electrical performance envelope encompasses the ATP218-TL-H specifications, enabling functional substitution in applications where thermal and spatial constraints permit package variation.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The ATP218-TL-H is classified as obsolete, necessitating transition to active production alternatives. The IPD040N03LGATMA1 maintains active product status with Infineon Technologies, ensuring long-term availability and manufacturing support.

Compliance and Certification: Both devices carry REACH Unaffected status and EAR99 ECCN classification. The IPD040N03LGATMA1 additionally holds RoHS3 Compliance certification, meeting current regulatory requirements for new designs and production environments.

Electrical Performance: The IPD040N03LGATMA1 delivers equivalent or superior electrical characteristics across all critical parameters. The 90A continuous drain current rating meets the ATP218-TL-H 100A specification within the context of different measurement conditions (Tc versus Ta). Lower gate charge (38 nC versus 70 nC) and reduced input capacitance (3900 pF versus 6600 pF) provide improved switching performance and reduced driver requirements.

Thermal Performance: The IPD040N03LGATMA1 provides 79W maximum power dissipation compared to 60W for the ATP218-TL-H, offering enhanced thermal headroom. Extended operating temperature range (−55°C to 175°C) accommodates broader environmental specifications.

Package Consideration: Package transition from ATPAK to TO-252-3 (DPAK) requires PCB layout modification. Both packages employ 2-lead plus tab configurations with equivalent thermal performance characteristics. TO-252-3 packaging offers broader industry standardization and supplier availability.

Frequently Asked Questions (FAQ)

Q: Can the IPD040N03LGATMA1 directly replace the ATP218-TL-H without circuit modification?

A: Electrical substitution is valid based on voltage rating, current capability, and gate voltage compatibility. Package transition from ATPAK to TO-252-3 requires PCB footprint redesign. Gate charge and input capacitance differences may require driver circuit evaluation to confirm gate drive adequacy, though the IPD040N03LGATMA1 typically requires less drive current due to lower capacitance values.

Q: What is the significance of the different current ratings (100A Ta versus 90A Tc)?

A: The ATP218-TL-H specifies 100A at ambient temperature (Ta), while the IPD040N03LGATMA1 specifies 90A at case temperature (Tc). These represent different measurement methodologies. The Tc measurement is more conservative and thermally representative of actual operating conditions. The IPD040N03LGATMA1 rating of 90A at case temperature typically provides equivalent or superior performance to 100A at ambient temperature in practical applications.

Q: Are there thermal management differences between ATPAK and TO-252-3 packages?

A: Both packages employ tab-based thermal coupling to PCB ground planes. TO-252-3 (DPAK) is an industry-standard package with extensive thermal design guidance available. ATPAK is a proprietary onsemi package. Thermal performance depends on PCB layout, copper area, and via configuration rather than package type. Equivalent thermal design yields comparable junction temperatures.

Q: What is the impact of lower gate charge on circuit design?

A: The IPD040N03LGATMA1 gate charge of 38 nC versus 70 nC for the ATP218-TL-H reduces gate drive power requirements and switching losses. This typically improves overall circuit efficiency and reduces thermal stress on gate driver integrated circuits. Existing gate driver circuits designed for the ATP218-TL-H will operate with improved performance margins when driving the IPD040N03LGATMA1.

Q: Does the extended Vgs rating (±20V versus ±10V) affect circuit compatibility?

A: The IPD040N03LGATMA1 extended gate voltage rating provides additional design margin and protection against gate overvoltage transients. Circuits designed for ±10V operation remain fully compatible. The higher rating does not require circuit modification and provides enhanced robustness.

Q: What inventory considerations apply to this substitution?

A: The ATP218-TL-H shows 911 pieces in stock as new original inventory. The IPD040N03LGATMA1 shows 1048 pieces in stock. Given the ATP218-TL-H obsolete status, existing inventory represents finite supply. The IPD040N03LGATMA1 active product status ensures ongoing availability for future production requirements.