ATP214-TL-H N-Channel 60V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The ATP214-TL-H is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 75A continuous drain current in ATPAK surface mount packaging. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives. The part operates at a maximum junction temperature of 150°C and dissipates up to 60W under case temperature conditions. Substitute parts must maintain compatibility with the 60V voltage rating, deliver equivalent or superior current handling capability, and accommodate the electrical characteristics required for the original application.

Substiute Parts

ATP214-TL-H

onsemiIn Stock: 1635ATP214-TL-H Datasheet

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NTD5C668NLT4G

onsemiIn Stock: 2268NTD5C668NLT4G Datasheet

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DMTH6010SK3Q-13

Diodes IncorporatedIn Stock: 3506DMTH6010SK3Q-13 Datasheet

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IRLR3636TRLPBF

Infineon TechnologiesIn Stock: 30232IRLR3636TRLPBF Datasheet

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STD65N55F3

STMicroelectronicsIn Stock: 15179STD65N55F3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ATP214-TL-H is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 60V or higher to ensure safe operation within the original design envelope.

Current Capability: Substitute parts must deliver continuous drain current (Id) at or above 75A to preserve the original circuit performance. Current ratings are specified at case temperature (Tc) or ambient temperature (Ta) conditions.

On-Resistance (Rds On): The maximum on-resistance must not exceed the original specification to prevent excessive power dissipation and thermal stress. Lower Rds On values indicate superior performance.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with comparable or lower gate charge maintain circuit timing characteristics.

Package Compatibility: The original ATPAK package may be substituted with equivalent surface mount packages (DPAK, TO-252-3) that accommodate the same lead configuration and thermal characteristics.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status to satisfy regulatory requirements.

The following substitute parts meet these criteria:

• NTD5C668NLT4G (onsemi, DPAK package)
• DMTH6010SK3Q-13 (Diodes Incorporated, TO-252-3 package)
• IRLR3636TRLPBF (Infineon Technologies, DPAK package)
• STD65N55F3 (STMicroelectronics, DPAK package)

Parameter Comparison

Engineering Selection Recommendations

DMTH6010SK3Q-13 is the primary substitute for the ATP214-TL-H. This Diodes Incorporated device maintains the 60V Vdss rating and delivers 70A continuous drain current at case temperature, meeting the original 75A specification. The on-resistance of 8.0 mOhm at 20A and 10V is comparable to the original part. The device carries active product status, ensuring long-term availability and supply chain stability. DMTH6010SK3Q-13 holds AEC-Q101 automotive qualification and ROHS3 compliance, satisfying regulatory requirements. The TO-252-3 package provides mechanical compatibility with standard surface mount assembly processes.

IRLR3636TRLPBF from Infineon Technologies serves as a secondary substitute. This HEXFET device is rated for 60V and delivers 50A continuous drain current at case temperature. The on-resistance of 6.8 mOhm at 50A and 10V is superior to the original specification, resulting in lower power dissipation. Gate charge of 49 nC at 4.5V is significantly lower than the original 96 nC, enabling faster switching characteristics. The device maintains active product status and ROHS3 compliance. The TO-252AA (DPAK) package is mechanically equivalent to standard DPAK configurations.

STD65N55F3 from STMicroelectronics provides an alternative with enhanced current capability. This STripFET device is rated for 55V Vdss (5V lower than the original) and delivers 80A continuous drain current at case temperature, exceeding the original 75A specification. The on-resistance of 8.5 mOhm at 32A and 10V is within acceptable tolerance. Gate charge of 45 nC at 10V is lower than the original specification. The device maintains active product status and ROHS3 compliance. Applications requiring the full 60V rating should verify that the 55V rating is acceptable for the circuit design.

NTD5C668NLT4G from onsemi is not recommended as a primary substitute. Although manufactured by the same company as the original part, this device delivers only 48A continuous drain current at case temperature, falling below the original 75A specification. The product status is listed as obsolete, presenting supply chain risk. This part is suitable only for applications where reduced current capability is acceptable.

Frequently Asked Questions (FAQ)

Q: Can I use NTD5C668NLT4G as a direct replacement for ATP214-TL-H?

A: No. NTD5C668NLT4G delivers only 48A continuous drain current at case temperature, which is insufficient for applications requiring the original 75A specification. Additionally, the product is obsolete, creating supply chain uncertainty. Use DMTH6010SK3Q-13, IRLR3636TRLPBF, or STD65N55F3 instead.

Q: What is the difference between ATPAK and DPAK packaging?

A: ATPAK and DPAK are both surface mount packages with two leads and a tab for thermal management. DPAK (TO-252-3) is the industry standard equivalent. Mechanical dimensions and thermal characteristics are comparable, allowing direct substitution in most applications. Verify PCB layout compatibility before assembly.

Q: Does STD65N55F3 work in a 60V circuit?

A: STD65N55F3 is rated for 55V Vdss, which is 5V lower than the original ATP214-TL-H specification. This device is suitable for circuits operating at 55V or lower. For circuits requiring the full 60V rating, use DMTH6010SK3Q-13 or IRLR3636TRLPBF instead.

Q: Which substitute part has the lowest on-resistance?

A: IRLR3636TRLPBF exhibits the lowest on-resistance at 6.8 mOhm when measured at 50A and 10V gate-source voltage. This results in reduced power dissipation and improved thermal performance compared to the original ATP214-TL-H specification of 8.1 mOhm.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts (NTD5C668NLT4G, DMTH6010SK3Q-13, IRLR3636TRLPBF, and STD65N55F3) are ROHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component procurement.

Q: What is the gate charge difference between ATP214-TL-H and the substitutes?

A: ATP214-TL-H has a gate charge of 96 nC at 10V. DMTH6010SK3Q-13 has 38.1 nC, IRLR3636TRLPBF has 49 nC, and STD65N55F3 has 45 nC. Lower gate charge enables faster switching and reduces driver circuit stress. Verify that the gate driver circuit can accommodate the lower charge requirements of substitute parts.

Q: Can I use IRLR3636TRLPBF in a circuit with ±20V gate-source voltage?

A: No. IRLR3636TRLPBF is rated for ±16V maximum gate-source voltage, which is 4V lower than the original ATP214-TL-H specification of ±20V. Circuits requiring ±20V gate drive must use DMTH6010SK3Q-13 or STD65N55F3 instead.

Q: Which substitute part has the longest operating temperature range?

A: All substitute parts (NTD5C668NLT4G, DMTH6010SK3Q-13, IRLR3636TRLPBF, and STD65N55F3) operate from -55°C to 175°C junction temperature, which exceeds the original ATP214-TL-H specification of 150°C maximum. This provides improved thermal margin for demanding applications.

Q: Is DMTH6010SK3Q-13 suitable for automotive applications?

A: Yes. DMTH6010SK3Q-13 carries AEC-Q101 automotive qualification, making it suitable for automotive and industrial applications requiring enhanced reliability standards. The device maintains ROHS3 compliance and active product status.